2010 Fiscal Year Final Research Report
Reconfigurable Nano-Spin Devices
Project/Area Number |
18106007
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Research Category |
Grant-in-Aid for Scientific Research (S)
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Allocation Type | Single-year Grants |
Research Field |
Electron device/Electronic equipment
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Research Institution | The University of Tokyo |
Principal Investigator |
TANAKA MASAAKI The University of Tokyo, 大学院・工学系研究科, 教授 (30192636)
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Co-Investigator(Kenkyū-buntansha) |
OHYA Shinobu 東京大学, 大学院・工学系研究科, 准教授 (20401143)
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Co-Investigator(Renkei-kenkyūsha) |
SUGAHARA Satoshi 東京工業大学, 大学院・総合理工学研究科, 准教授 (40282842)
NAKANE Ryosho 東京大学, 大学院・工学系研究科, 特任講師 (50422332)
ファム ナム ハイ 東京大学, 大学院・工学系研究科, 特任助教 (50571717)
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Project Period (FY) |
2006 – 2010
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Keywords | スピンデバイス |
Research Abstract |
We aimed at the development of basic technologies for reconfigurable nano-scale spin devices that cannot be realized by the conventional semiconductor device technology. We proposed new semiconductor-based device structures with spin-degrees of freedom, and fabricate the reconfigurable devices (in which the device functions can be reprogrammed after fabricating the devices), and demonstrated the device operation principles. We studied the following three types of spin devices. (1) Group-IV-semiconductor based MOSFET planer-type spin devices (2) III-V-semiconductor based heterojunction spin devices (3) Single-electron type spin transistors based on hybrid materials consisting of ferromagnetic nano-particles and semiconductors.
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[Journal Article] Nature of magnetic coupling between Mn ions in as-grown Ga1-xMnxAs studied by x-ray magnetic circular dichroism2008
Author(s)
Y.Takeda, M.Kobayashi, T.Okane, T.Ohkochi, J.Okamoto, Y.Saitoh, K.Kobayashi, H.Yamagami, A.Fujimori, A.Tanaka, J.Okabayashi, M.Oshima, S.Ohya, P.N.Hai, M.Tanaka
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Journal Title
Phys.Rev.Lett. 100
Pages: 247202
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