2009 Fiscal Year Final Research Report
Spin based three terminal device using magnetic semiconductor/non-magnetic semiconductor hybrid structures
| Project/Area Number |
18206001
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
NITTA Junsaku Tohoku University, 大学院・工学研究科, 教授 (00393778)
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| Co-Investigator(Kenkyū-buntansha) |
KOHDA Makoto 東北大学, 大学院・工学研究科, 助教 (00420000)
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| Co-Investigator(Renkei-kenkyūsha) |
OHNO Yuzo 東北大学, 電気通信研究所, 准教授 (00282012)
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| Project Period (FY) |
2006 – 2009
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| Keywords | 半導体 |
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| Research Abstract |
We have found that spin relaxation is suppressed in narrow InGaAs wires. Furthermore, the spin relaxation length is much enhanced by controlling spin-orbit interaction through gate voltage on top of the InGaAs wires. We have confirmed that magnetic anisotropy of magnetic semiconductor GaMnAs can be artificially introduced by making its wire-width narrower. A fabricated GaMnAs double-tunnel-barrier transistor has shown a current gain (=corrector current/base current) under particular bias condition.
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