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2008 Fiscal Year Final Research Report

Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

Research Project

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Project/Area Number 18206003
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionRitsumeikan University

Principal Investigator

NANISHI Yasushi  Ritsumeikan University, 理工学部, 教授 (40268157)

Co-Investigator(Kenkyū-buntansha) NAOI Hiroyuki  立命館大学, COE推進機構, 研究員 (10373101)
NA Hyunseok  立命館大学, COE推進機構, 研究員 (80411239)
ARAKI Tsutomu  立命館大学, 理工学部, 准教授 (20312126)
AOYAGI Yoshinobu  立命館大学, COE推進機構, 教授 (70087469)
YAMAGUCHI Tomohiro  立命館大学, 総合理工学・研究機構, 研究員 (50454517)
Co-Investigator(Renkei-kenkyūsha) KANEKO Masamitsu  立命館大学, 総合理工学・研究機構, ポスドク研究員 (70374709)
WANG Ke  立命館大学, 総合理工学・研究機構, ポスドク研究員 (60532223)
Project Period (FY) 2006 – 2008
Keywordsエピタキシャル成長 / 窒化インジウム / 分子線エピタキシー
Research Abstract

RF-MBE法を用いたInNとその関連混晶の成長に特有な本質的課題(結晶高品質化とp型の実現、接合の形成、ヘテロ・ナノ構造制御等)に取り組み、デバイス応用へ向けた光・電子物性制御の基本検討を実施した。高In組成InGaNへのMgドーピングによるp型伝導制御、InN MISダイオードおよびオーミック電極特性、GaN/InN、AlN/InNヘテロ界面におけるインターミキシングに関する知見を得た。

  • Research Products

    (28 results)

All 2009 2008 2007

All Journal Article (16 results) (of which Peer Reviewed: 16 results) Presentation (11 results) Book (1 results)

  • [Journal Article] Appl. Phys2009

    • Author(s)
      T. Yamaguchi and Y. Nanishi
    • Journal Title

      Express 2

      Pages: 051001/1-3

    • Peer Reviewed
  • [Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3 (0001) templates, phys2009

    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
    • Journal Title

      stat. sol (c)6

      Pages: S360-S363

    • Peer Reviewed
  • [Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate, phys2009

    • Author(s)
      Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)6

      Pages: S425-S428

    • Peer Reviewed
  • [Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE, phys2009

    • Author(s)
      H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)6

      Pages: S429-S432

    • Peer Reviewed
  • [Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE, J2009

    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
    • Journal Title

      Cryst. Growth 311

      Pages: 2780-2782

    • Peer Reviewed
  • [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009

    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Journal Title

      SPIE Photonics West 2009 Proceedings 7216 72160N

      Pages: 1-8

    • Peer Reviewed
  • [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns, Jpn2008

    • Author(s)
      S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
    • Journal Title

      J. Appl. Phys 47

      Pages: 5330-5332

    • Peer Reviewed
  • [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008

    • Author(s)
      T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      Journal of Electronic Materials 37

      Pages: 603-606

    • Peer Reviewed
  • [Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces, phys2007

    • Author(s)
      H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
    • Journal Title

      stat. sol 244

      Pages: 1834-1838

    • Peer Reviewed
  • [Journal Article] Mg-doped N-polar InN Grown by RF-MBE, Mater2007

    • Author(s)
      D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
    • Journal Title

      Res. Soc. Symp. Proc 955

      Pages: 0955-I08-01

    • Peer Reviewed
  • [Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE, Mater. Res2007

    • Author(s)
      T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
    • Journal Title

      Soc. Symp. Proc 955

      Pages: 0955-I07-40

    • Peer Reviewed
  • [Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE, phys2007

    • Author(s)
      S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)4

      Pages: 2556-2559

    • Peer Reviewed
  • [Journal Article] Growth of A-plane(11-20) In-rich InGaN on r-plane(10-12) sapphire by RF-MBE, phys2007

    • Author(s)
      M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)4

      Pages: 2560-2563

    • Peer Reviewed
  • [Journal Article] Growth of In-rich InAlN films on(0001) sapphire by RF-MBE and their properties2007

    • Author(s)
      H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 1313-1319

    • Peer Reviewed
  • [Journal Article] Effect of low temperature InGaN interlayers on structural and optical properties of In-rich InGaN, J2007

    • Author(s)
      H. Na, S. Takado, S. Sawada, M. Kurouchi, T. Akagi, H. Naoi, T. Araki, and Y. Nanishi
    • Journal Title

      Cryst. Growth 300

      Pages: 177-181

    • Peer Reviewed
  • [Journal Article] Growth of InN nanocolumns by RF-MBE, J2007

    • Author(s)
      S. Nishikawa, Y. Nakao, H. Naoi, T. Araki, H. Na, and Y. Nanishi
    • Journal Title

      Cryst. Growth 301-302

      Pages: 490-495

    • Peer Reviewed
  • [Presentation] AlN/InNヘテロ構造の作製と評価2009

    • Author(s)
      奥村昌平、山口智広、武藤大祐、荒木努、名西やす之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
  • [Presentation] CTLM法によるAl, Ti, Ni, のInNへのコンタクト抵抗評価2009

    • Author(s)
      菊池将悟、前田就彦、山口智広、名西やす之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-21
  • [Presentation] RF-MBE法を用いた高In組成In GaNに対するMg dopingの検討2008

    • Author(s)
      福本英太、澤田慎也、武藤大祐、山口智広、荒木努、名西やす之
    • Organizer
      第38回結晶成長国内会議(NCCG-38)
    • Place of Presentation
      仙台市戦災復興記念館
    • Year and Date
      2008-11-05
  • [Presentation] Recent Progress of InN and In GaN Growth for Device Applications (Invited)2008

    • Author(s)
      Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-09
  • [Presentation] GaN/InNヘテロ構造の成長と評価2008

    • Author(s)
      武藤大祐、山口智広、荒木努、名西やす之
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-04
  • [Presentation] CTLM法によるInNオーミックコンタクト抵抗の評価2008

    • Author(s)
      菊池将悟、佐藤丈、檜木啓宏、山口智広、前田就彦、荒木努、名西やす之
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-03
  • [Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited), International Conference on Optical2008

    • Author(s)
      Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
    • Organizer
      Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
    • Place of Presentation
      Edmonton, Canada
    • Year and Date
      2008-07-23
  • [Presentation] Fabrication and Electrical Characterization of InN MES and MIS Diode Structures2008

    • Author(s)
      S. Kikuchi, T. Sato, A. Hinoki, D. Muto, N. Maeda, T. Araki, and Y. Nanishi
    • Organizer
      27th Electronic Materials Symposium (EMS27)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2008-07-10
  • [Presentation] GaN/InN界面におけるInとGaのインターミキシング2008

    • Author(s)
      武藤大祐、山口智広、澤田慎也、荒木努、名西やす之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部
    • Year and Date
      2008-03-27
  • [Presentation] InN MISダイオードの順方向電気的特性2008

    • Author(s)
      佐藤丈、檜木啓宏、武藤大祐、前田就彦、荒木努、名西やす之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部
    • Year and Date
      2008-03-27
  • [Presentation] RF-MBE Growth and Properties of Mg-doped Polar and Non-polar InN and In-rich InGaN (Invited)2008

    • Author(s)
      Y. Nanishi
    • Organizer
      Topical Workshop on achieving p-type InN
    • Place of Presentation
      Hakone, Japan
    • Year and Date
      2008-03-04
  • [Book] Chapter 1-Molecular-beam epitaxy of InN, Editors : T. D. Veal, C. F. McConville, and W. J. Schaff, CRC Press/Taylor and Francis(in press)2009

    • Author(s)
      Y. Nanishi, T. Araki and T. Yamaguchi
    • Publisher
      Indium Nitride and Related Alloys

URL: 

Published: 2010-06-10   Modified: 2021-04-07  

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