2009 Fiscal Year Final Research Report
Research on hexagonal boron nitride semiconductors
| Project/Area Number |
18206004
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | NTT Basic Research Laboratories |
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Principal Investigator |
KOBAYASHI Yasuyuki NTT Basic Research Laboratories, 機能物質科学研究部・薄膜材料研究グループ, 主幹研究員 (90393727)
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| Co-Investigator(Kenkyū-buntansha) |
MAKIMOTO Toshiki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 部長 (50374070)
AKASAKA Tetsuya 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員 (90393735)
NISHIKAWA Atsushi 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 社員 (60417095)
NAKANO Hidetoshi 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (90393793)
GOTOH Hideki 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (10393795)
TAWARA Takehiko 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 研究主任 (40393798)
SANADA Haruki 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 社員 (50417094)
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| Project Period (FY) |
2006 – 2009
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| Keywords | 半導体 / 結晶成長 / 半導体物性 / 光物性 |
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| Research Abstract |
We demonstrate that (0001) hexagonal boron nitrides (h-BN) are epitaxially grown on (111) Ni and (0001) sapphire substrates by metalorganic vapor phase epitaxy. A near-band-gap ultraviolet emission peak centered at energy of 5.47eV (227nm) is clearly observed in cathodoluminescence spectra at room temperature from the h-BN epitaxial layers. The photon energy dependence of the squared absorption coefficient is linear, indicating a direct band gap in the h-BN, and the optical band gap is determined to be 5.9eV. The h-BN has a promising as an optoelectronic material in the deep ultraviolet spectral region.
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