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2008 Fiscal Year Final Research Report

Manufacturing Process of Axisymmetric Teardrop Crystal of Si for Solar-cell

Research Project

  • PDF
Project/Area Number 18206077
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionJapan Aerospace Exploration Agency

Principal Investigator

KURIBAYASHI Kazuhiko  Japan Aerospace Exploration Agency, 宇宙科学研究本部, 教授 (70092195)

Co-Investigator(Kenkyū-buntansha) NAGASHIO Kosuke  東京大学, 大学院・工学系研究科, 講師 (20373441)
NOZAKI Kiyoshi  独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部, 研究員 (40415899)
Project Period (FY) 2006 – 2008
Keywords球状Si結晶 / 無容器プロセス / ドロップチューブ
Research Abstract

無指向性太陽電池への応用が期待される球状Si結晶の育成方法として,予め結晶核を内包したセミソリッド状態からの噴射および異質核生成の利用による低過冷度での結晶化の可能性を検討した.その結果,前者では噴射に適したセミソリッド状態を再現良く得ることが困難なことから,本研究では異質核生成の利用に重点を移し, Siの核形成に対して触媒作用が高いと考えられるAlPの利用を試みた.結果は,添加量が10^<16>~10^<17>cm^<-3>のときに太陽電池への適用が可能な結晶の収率が80%を超えることを示した.溶解度積の解析からは,上記の添加量は,低~中過冷度(ΔT<200K)でAlPが過飽和になる値であることが示された.

  • Research Products

    (19 results)

All 2009 2008 2007 2006 Other

All Journal Article (11 results) (of which Peer Reviewed: 8 results) Presentation (5 results) Book (1 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Spherical crystallization of Si during free fall in drop-tube2009

    • Author(s)
      K. Kuribayashi, K. Nagashio and M. Tajima
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 722-726

    • Peer Reviewed
  • [Journal Article] 低コスト・省資源を実現する太陽電池用Si球状結晶の育成2008

    • Author(s)
      長汐晃輔, 安藤等, 山崎智裕, 栗林一彦, 神保至, 田島道夫
    • Journal Title

      まてりあ : 日本金属学会会報 47

      Pages: 147-153

  • [Journal Article] Nucleation of cubic phase in deeply undercooled melt of anisotropic material2008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      Transaction of the Materials Research Society of Japan 33

      Pages: 385-388

    • Peer Reviewed
  • [Journal Article] In-situ observation of solidification behaviour from undercooled α -Fe_2Si_5 melt using an electromagnetic levitator2008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      Review of Advanced Materials Science 18

      Pages: 439-443

    • Peer Reviewed
  • [Journal Article] Orientation analysis of hexagonal dendrite formed from an undercooled melt of α-Fe_2Si_52008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      Metallurgical and Materials Transactions A 39

      Pages: 135-141

    • Peer Reviewed
  • [Journal Article] Dynamic process of dendrite fragmentation in solidification from undercooled Si melt using time-resolved x-ray diffraction2007

    • Author(s)
      K. Nagashio, K. Nozaki, K. Kuribayashi, Y. Katayama
    • Journal Title

      Applied Physics Letters 91

      Pages: art. no. 061916

    • Peer Reviewed
  • [Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007

    • Author(s)
      K. Kuribayashi, K. Nagashio, K. Niwata, M.S.V. Kumar, T. Hibiya
    • Journal Title

      Materials Science and Engineering A 448-451

      Pages: 675-679

    • Peer Reviewed
  • [Journal Article] 試料浮遊溶融技術と無容器材料生成プロセス2007

    • Author(s)
      栗林一彦
    • Journal Title

      J. Plasma Fusion Res. 83

      Pages: 139-143

  • [Journal Article] 過冷融液からの準安定相創製2006

    • Author(s)
      栗林一彦
    • Journal Title

      まてりあ : 日本金属学会会報 45

      Pages: 511-513

  • [Journal Article] Solid-liquid interface energy of silicon2006

    • Author(s)
      Z. Jian, K. Kuribayashi, W. Jie, F. Chang
    • Journal Title

      Acta Materialia 54

      Pages: 3227-3232

    • Peer Reviewed
  • [Journal Article] Spherical silicon crystal formed by semisolid process in drop tube2006

    • Author(s)
      K. Nagashio, H. Okamoto, H. Ando, K. Kuribayashi, I. Jimbo
    • Journal Title

      Japanese Journal of Applied Physics, Part 2: Letters 45

      Pages: L623-L626

    • Peer Reviewed
  • [Presentation] 過冷却液体からの準安定相創製2008

    • Author(s)
      栗林一彦
    • Organizer
      第38回結晶成長国内会議(NCCG-38)
    • Place of Presentation
      仙台(基調講演)
    • Year and Date
      20081104-06
  • [Presentation] In-situ crystallization of Si droplet during free fall in drop-tube2008

    • Author(s)
      K. Kuribayashi
    • Organizer
      Seventh China-Japan Workshop on Microgravity Sciences, C-JWMS 2008
    • Place of Presentation
      Hangzhou, China(invited presentation)
    • Year and Date
      20081026-30
  • [Presentation] Spherical crystallization of Si during free fall in drop-tube2008

    • Author(s)
      K. Kuribayashi, K. Nagashio, M. Tajima
    • Organizer
      The 4th Asian Conference on Crystal Growth and Crystal Technology, CGCT-4
    • Place of Presentation
      Sendai, Japan.(invited presentation)
    • Year and Date
      20080521-24
  • [Presentation] High-speed IR imaging of a quenched interface of an undercooled droplet impinging on a silicon wafer2007

    • Author(s)
      K. Nagashio, K. Kodaira, K. Kuribayashi, T. Motegi
    • Organizer
      SP^<07> Proceedings of the 5th Decennial International Conference on Solidification Processing
    • Place of Presentation
      Sheffield
    • Year and Date
      20070700
  • [Presentation] Metastable phase formation from undercooled melt in containerless processing2006

    • Author(s)
      K. Kuribayashi, K. Nagashio
    • Organizer
      19^<th> General Meeting of the International Mineralogical Association, IMA2006
    • Place of Presentation
      Kobe, Japan(invited presentation)
    • Year and Date
      20060723-28
  • [Book] Crystal growth of spherical Si, Crystal growth of Si forsolar cells(ed. by T. Fukuda)(in press)

    • Author(s)
      K. Nagashio, K. Kuribayashi
    • Publisher
      Springer
  • [Patent(Industrial Property Rights)] 球状シリコン結晶の製造方法2008

    • Inventor(s)
      栗林一彦, 長汐晃輔, 安藤等
    • Industrial Property Rights Holder
      独立行政法人 宇宙航空研究開発機構
    • Industrial Property Number
      特願2008-021319
    • Filing Date
      2008-01-31
  • [Patent(Industrial Property Rights)] 球状シリコン単結晶の製造方法及び装置2008

    • Inventor(s)
      長汐晃輔, 栗林一彦, 岡本英樹
    • Industrial Property Rights Holder
      独立行政法人 宇宙航空研究開発機構
    • Industrial Property Number
      特許第4141467
    • Acquisition Date
      2008-06-20

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Published: 2010-06-10   Modified: 2016-04-21  

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