2007 Fiscal Year Final Research Report Summary
Time resolved and in-situ structural analysis of a ferroelectric thin film during polarization switching using synchrotron-based diffraction
| Project/Area Number |
18310085
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Japan Synchrotron Radiation Research Institute |
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Principal Investigator |
SAKATA Osami Japan Synchrotron Radiation Research Institute, Japan Synchrotron Radiation Research Institute Research & Utilization Div., Surface Structure Team Leader (40215629)
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| Co-Investigator(Kenkyū-buntansha) |
FUNAKUBO Hiroshi Tokyo Institute of Technology, 総合理工学研究科, Associate Professor (90219080)
KIMURA Shigeru Japan Synchrotron Radiation Research Institute, Research & Utilization Div., Nano Group Leader (50360821)
YABASHI Makina RIKEN, XFEL Project Head Offece, Experimental Facility Group, Research Scientist (00372144)
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| Project Period (FY) |
2006 – 2007
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| Keywords | Simultaneous analysis of structure and polarizatio / Pulse-electric-field-induced starin / Time-resolved measurement / Synchrotron-based diffraction / X-ray microbeam / Structural analysis of thin film / BL13XU Surface and Interface Structures / Sping-8 |
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| Research Abstract |
A synchrotron-based time-resolved diffraction method has been developed for characterizing a piezoelectric thin film. This was why we needed to complete a time-resolved diffraction system equipped with a ferroelectric test system. We introduced the fenoelectric test system(Toyotechinca FCE-HS100D) for high-speed characterization of polarization in a ferroelectric thin film and modified it for a time-resolved and in-situ measurement. We have succeeded in detection of electrostuction(electuc-field-induced strain) of ferroelectric thin films such as epitaxial Pb(Zr_<0.25>, Ti_<0.75>) O_3(PZT) and polycrystalline BiFeO_3(BFO) films. The electrostnctive strain was induced by an applied electric field having repeated ns-width pulses. In addition, we determined piezoelectric constants from diffraction peak shifts.
The apparatus receives a pulse pattern formed by a 508 MHz counter using the RF signals as a clock of the Spring-8 storage ring and applies a pulse electric field to a sample. We use
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d the pulse pattern as a trigger ; accordingly the applied electric fields were synchronized with incident x-rays.
A sample was a 750 nm-thick PZT film epitaxially grown on a SrRuO_3 thin film using metal organic chemical vapor deposition. Upper Pt electrodes with a diameter of 100 μm were arrayed in a lattice. One prober touched an upper electiode Pt incident x-rays hit, while the other touched another upper electrode. We aligned a polar direction in the PZT film using an applied voltage of 30 V in advance ; consequently, polarization(+Pr) remamed. We made a Θ-2Θ scan around the PZT 004 Bragg angle and recorded a diffraction- intensity profile as a function of time at each combination of Θ and 2Θ angle using an avalanche photo diode detector for a fixed voltage of 0, 10, 20 30 40 50, 55, 60, 70, and 75 V, respectively. The unipolar-rectangular-shape pulse width of 200 ns was repeatedly applied with a period of 800 ns. Measured time used at each angle was 100 s. An incident slit size used was 15×15μm.
We observed that the 004 main peaks were shifted toward the lower angle only when the applied field was on. This indicates that the(004) lattice-plane spacing along the surface normal was lengthened because of electrostriction. The pulse electric-field induced strain Δd / d estimated from the main peak shift for 50 V was 0.0004 ; correspondingly, piezoelectric constant d_<33> was 13 pm / V. Furthermore, our finding is that the other peak appeared at a lower angle. d_<33> obtained from the other peak shift is ca. 50 pm / V. This value almost corresponds to that obtained using AFM measurements.
We also applied the time-resolved diffraction method to characterizing a polycrystalline BFO thin film. The applied voltages were 0, 3, 5, 8, 10, 11, and 12 V with a 150 ns width and a 804 ns periodicity. Obtained d_<33> values for the(001) and(110) domain were 27.8 and 26.4 pm / V, respectively. Less
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[Journal Article] Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O_3 Film by Metal organic Chemical Vapor Deposition2006
Author(s)
S.Yokoyama, K.Takahashi, S.Okamoto, A.Nagai, J.Minamidate, K.Saito, N.Ohashi, H.Haneda, O.Sakata, S.Kimura, K.Nishida, T.Katoda, and H.Funakubo
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Journal Title
Jpn. J. Appl. Phys. 45
Pages: 5102-5106
Description
「研究成果報告書概要(和文)」より
Peer Reviewed
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[Journal Article] Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti) O_3 Film by Metalorganic Chemical Vapor Deposition2006
Author(s)
S. Yokoyama, K. Takahashi, S. Okamoto, A. Nagai, J. Mmamidate, K. Saito, N. Ohashi, H. Haneda, O. Sakata, S. Kimura, K. Nishida, T. Katoda, and H. Funakubo
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Journal Title
Jpn. J. Appl. Phys. 45
Pages: 5102-5106
Description
「研究成果報告書概要(欧文)」より
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[Presentation] その場X線回折法によるNio薄膜から壁状構造への変化過程の活性化エネルギーの評価2007
Author(s)
O. Sakata, A. Matsuda, and M. Yoshimoto
Organizer
The 2007 annual meeting of the Crystallographic Society of Japan
Place of Presentation
Tokyo Institute of Technology, Ookayama
Year and Date
20071201-02
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Strained-relaxed Novel Domain Structure of Epitaxially Grown Pb(Zr,Ti)O_3 Thick Films by Metal Organic Chemical Vapor Deposition2007
Author(s)
H.Funakubo, H.Nakaki, R.Ikariyama, S.Yokoyama, Y.-K.Kim, K.Nishida, K.Saito, O.Sakata and S.Kimura
Organizer
2007 MRS Fall Meeting
Place of Presentation
Boston,MA,U.S.A
Year and Date
20071126-30
Description
「研究成果報告書概要(和文)」より
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[Presentation] Strained-relaxed Novel Domain Structure of Epitaxially Grown Pb(Zr,Ti) O_3 Thick Films by Metal Organic Chemical Vapor Deposition2007
Author(s)
H. Funakubo, H. Nakaki, R. Ikariyama, S. Yokoyama, Y.- K. Kim, K. Nishida, K. Saito, O. Sakata and S Kimura
Organizer
The 2007 MRS Fall Meeting
Place of Presentation
Boston, MA, U.S.A
Year and Date
20071126-30
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Siに埋め込まれたBi原子スケール細線の構造評価(Invited)2007
Author(s)
O. Sakata, W. Yashuo, D. R Bowler, and K. Sakamoto, and K Miki
Organizer
The 20th annual meeting of the Japanese Society for Synchrotron Radiation Research
Place of Presentation
International Conference Center Hiroshima
Year and Date
2007-01-12
Description
「研究成果報告書概要(欧文)」より
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