2007 Fiscal Year Final Research Report Summary
Highly-functional hybrid silicon single-electron devices inccoporating nanoelectromechanical structures
| Project/Area Number |
18310097
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
MIZUTA Hiroshi Tokyo Institute of Technology, Graduate School of Engineering, Visiting Professor (90372458)
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| Co-Investigator(Kenkyū-buntansha) |
ODA Shunri Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, Professor (50126314)
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| Project Period (FY) |
2006 – 2007
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| Keywords | NEMS / suspended gate / nanoscale MOSFET / single-electron transisto / silicon nanobridge / hybrid simulation / 3D FEM simulation / equivalent circuit model |
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| Research Abstract |
Co-integration of silicon-based nanoelectromechanical systems (NEMSs) and single-electron transistors (SETs) was investigated for developing novel functional nanodevcies beyond the conventional MOSFETs and SETs. Hybrid NEMS-MOS-SET simulation technology was first developed by combining three-dimensional mechanical, electrostatic and transport simulation. Based on the numerical results, novel SET-NEMS analytical models were developed and integrated into conventional SPICE circuit simulator. By using these simulation technologies, two device concepts were explored : one which features a mechanically movable gate integrated into SETs (SET-NEMS) and another in which the SET channel itself works as NEMS (NEMSET). For the former structure, we fabricated suspended-gate structures on the silicon-on-insulator (SOD substrates and demonstrated that a rapid 'pull-in' motion of the suspended-gate enables to switch the period of Coulomb oscillation and this may be utilized for signal encoding in the periodicity realizing the offset charge independent SET logic. For the latter structure, we successfully fabricated silicon nanobridge transistors with a suspended quantum dot and demonstrated clear Coulomb blockade characteristics superior to the conventional SETs. In addition, we observed at temperatures<4.2K that Coulomb current peaks disappear for a finite range of source-to-drain voltage, which is attributable to a new type of blockade of single-electron tunneling caused by cavity phonons confined in the suspended quantum dot.
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[Journal Article] Room temperature single electron charging in single silicon nanochains2008
Author(s)
M.A., Rafiq, Z. A., K., Durrani, H., Mizuta, A., Colli, P., Servati, A. C., Ferrari, W., I. Milne, S., Oda
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Journal Title
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] "Electron transport in nanocrystalline silicon", Device Applications of Silicon Nanocrystals and Nanostructures2008
Author(s)
H., Mizuta, S., Oda, S., Uno, N., Mori, N., Koshida
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Journal Title
in press Springer (in press)
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory2007
Author(s)
T., Nagami, H., Mizuta, N., Momo, Y., Tsuchiya, S., Saito, T., Arai, T., Shimada, Oda
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Journal Title
IEEE Trans. on Electron Devices ED-54 No.5
Pages: 1132-1139
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Ab-initio simulation of phonon properties of ultra-thin silicon films2007
Author(s)
S., Sawai, H., Mizuta, S., Higashijima, S., Uno, M., Okamoto, Y., Tsuchiya, S., Oda
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Journal Title
bit. Symp. on Frontiers in Computational Science of Nanoscale Transport, Tokyo, R Tune
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Phonon properties of ultra thin silicon films2007
Author(s)
S., Sawai, S., Uno, M., Okamoto, Y., Tsuchiya, S., Oda, H., Mizuta
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Journal Title
2nd Workshop on ab initio Phonon Calculations, Cracow 7
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots2006
Author(s)
Y., Tsuchiya, K., Takai, N., Momo, T., Nagami, S., Yamaguchi, T., Shimoda, H., Mizuta, S., Oda
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Journal Title
J. Appl. Phys 100
Pages: 094306
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Ab-initio simulation of phon on properties of ultra-thin silicon films2007
Author(s)
S., Sawai, H., Mizuta, S., Higashijima, S., Uno, M., Okamoto, Y., Tsuchiya, S., Oda
Organizer
Int. Symp. on Frontiers in Computational Science of Nanoscale Transport
Place of Presentation
Tokyo
Year and Date
2007-06-08
Description
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