2007 Fiscal Year Final Research Report Summary
Study of ZnO based heterostructures towards realizing high-luminous efficiency ultraviolet to blue light-emitting diodes
Project/Area Number |
18350092
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Functional materials/Devices
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Research Institution | Tohoku University |
Principal Investigator |
OHTOMO Akira Tohoku University, TOHOKU UNIVERSITY, INSTITUTE FOR MATERIALS RESEARCH, ASSISTANT PROFESSOR (10344722)
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Project Period (FY) |
2006 – 2007
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Keywords | MATERIALS SCIENCE & CRYSTAL TECHNOLOGY / ELECTRONIC ELEMENTS & DEVICES / SEMICONDUCTOR OPTICS & PHYSICS / LIGHT-EMITTING DEVICES |
Research Abstract |
Zinc oxide (ZnO) has been attracting increasing attentions due to their superior properties for making ultraviolet to blue light-emitting diodes (LED) since the first homoepitaxial LED was realized in 2005. Impacts of their performance are expected to span from high-luminous efficiency to low-cost and clean productivity, taking advantages of abundant source and commercially available single-crystalline substrates. This study aims at improvement of electro-luminescence (EL) efficiency of LED fabricated on conducing ZnO substrates, where vertical contact geometry can be utilized being preferable to practical application. Using molecular beam epitaxy technique, we have fabricated double-heterostructures consisting of ZnO well layers sandwiched by p-and n-type MgZnO barrier layers. As a result, highly efficient band-edge EL is realized. Thus, our study paves a way for development of commercial products. It is also an important protocol to search a transparent and metallic material to form
… More
good Ohmic contact to p-type layer. We find that a conducting polymer having a large work function has good properties as well as applicability for the use of simple spin-coating. Moreover, this polymer is found to be very useful for making Schottky contact to n-type ZnO. Nevertheless, a few technical issues such as proper analysis of hole concentration and improvement of doping efficiency of nitrogen remain to be solved in future. In other viewpoints associated with the present study, some notable achievements can be obtained; (1) observation of quantum Hall effect in MgZnO/ZnO heterostructures (published in Science, one of high-impact journals) (2) epitaxial growth of MgZnO films having record-long photoluminescence lifetime, both of which indicate state of art technology. Over all achievements can be considered remarkable and satisfactory to contents of proposal. Furthermore, basic idea, knowledge and techniques for pursuing next research subject (study of transport properties in oxide semiconductor low-dimensional structures) have been acquired through this study. Less
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[Presentation] 分子線エピタキシー法(MBE)によるZn極性面ZnO基板上MgZnO/ZnOヘテロ構造2008
Author(s)
中原 健, 湯地洋行, 赤坂俊輔, 田村謙太郎, 西本宜央, 高水大樹, 佐々木 敦, 藤井哲雄, 田辺哲弘, 高須秀視, 塚崎 敦, 大友 明, 天池弘明, 尾沼猛儀, 秩父重英, 川崎雅司
Organizer
2008年春季 第55回応用物理学関係連合講演会
Place of Presentation
船橋
Year and Date
20080326-30
Description
「研究成果報告書概要(和文)」より
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[Presentation] MgZnO/ZnO heterostructures grown on the Zn-polar ZnO substrates by molecular beam epitaxy2008
Author(s)
K. Nakahara, H. Yuji, S. Akasaka, K Tamura, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Fujii, T. Tanabe, H. Takasu, A. Tsukazaki, A. Ohtomo, H. Amaike, T. Onuma, S. F. Chichibu, M. Kawasaki
Organizer
The 55^<th> Annual Spring Meeting of Japanese Society of Applied Physics
Place of Presentation
Funabashi, Japan
Year and Date
20080326-30
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Quantum Hall effect in ZnO2008
Author(s)
A. Ohtomo, A. Tsukazaki, T. Kita, Y. Ohno, H. Ohno, K. Nakahara, H. Yuji, K. Tamura, S. Akasaka, H. Takasu, M. Kawasaki
Organizer
WPI & IFCAM Joint Workshop "Challenge of Interdisciplinary Materials Science to Technological Innovation of the 21st Century"
Place of Presentation
Sendai, Japan
Year and Date
20080218-19
Description
「研究成果報告書概要(和文)」より
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[Presentation] Quantum Hall effect in ZnO2008
Author(s)
A. Ohtomo, A. Tsukazaki, T. Kita, Y. Ohno, H. Ohno, K Nakahara, H. Yuji, K. Tamura, S. Akasaka, H. Takasu, M. Kawasaki
Organizer
WPI & IFCAM Joint Workshop "Challenge of Interdisciplinary Materials Science to Technological Innovation of the 21st Century"
Place of Presentation
Sendai
Year and Date
20080218-19
Description
「研究成果報告書概要(欧文)」より
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[Presentation] MgZnO homoepitaxial films grown by molecular beam epitaxy2008
Author(s)
H. Yuji, K. Nakahara, K. Tamura, S. Akasada, A. Sasaki, H. Amaike, A. Tsukazaki, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki
Organizer
SPIE Photonics West2008 Zinc Oxide Materials and Devices III
Place of Presentation
San Jose, USA
Year and Date
20080119-24
Description
「研究成果報告書概要(和文)」より
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[Presentation] Homoepitaxial MgZnO grown by molecular beam epitaxy toward ultraviolet light-emitting diodes (Invited)2008
Author(s)
K. Nakahara, H. Yuji, K. Tamura, S. Akasaka, A. Sasaki, Y. Nishimoto, D. Takamizu, T. Fujii, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki
Organizer
SPIE Photonics West2008 Zinc Oxide Materials and Devices III
Place of Presentation
San Jose, USA
Year and Date
20080119-24
Description
「研究成果報告書概要(和文)」より
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[Presentation] MgZnO homoepitaxial films grown by molecular beam epitaxy2008
Author(s)
H. Yuji, K. Nakahara, K. Tamura, S. Akasada, A. Sasaki, H. Amaike, A. Tsukazaki, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki
Organizer
SPIE Photonics West2008 Zinc Oxide Materials and Devices III
Place of Presentation
San Jose, USA.
Year and Date
20080119-24
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Homoepitaxial MgZnO grown by MBE toward UV LEDs (Invited)2008
Author(s)
K. Nakahara, H. Yuji, K. Tamura, S. Akasaka, A. Sasaki, Y. Nishimoto, D. Takamizu, T. Fujii, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki
Organizer
SPIE Photonics West2008 Zinc Oxide Materials and Devices III
Place of Presentation
San Jose, USA.
Year and Date
20080119-24
Description
「研究成果報告書概要(欧文)」より
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[Presentation] プラズマ支援型分子線エピタキシー法(PAMBE)による+C面ZnO基板上ヘテロ構造(招待)2007
Author(s)
中原 健, 湯地洋行, 田村謙太郎, 赤坂俊輔, 高水大樹, 西本宜央, 藤井哲雄, 佐々木敦, 塚崎 敦, 大友 明, 川崎雅司, 尾沼猛儀, 天池弘明, 秩父重英
Organizer
平成19年度金研ワークショップ 酸化亜鉛半導体テクノロジーの進歩
Place of Presentation
仙台
Year and Date
20071220-21
Description
「研究成果報告書概要(和文)」より
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[Presentation] MgZnOのMBE成長におけるZnO基板OFF角依存2007
Author(s)
湯地洋行, 中原 健, 田村謙太郎, 赤坂俊輔, 塚崎 敦, 大友 明, 川崎雅司, 尾沼猛儀, 秩父重英
Organizer
平成19年度金研ワークショップ 酸化亜鉛半導体テクノロジーの進歩
Place of Presentation
仙台
Year and Date
20071220-21
Description
「研究成果報告書概要(和文)」より
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[Presentation] MBE成長MgZnOのTRPL2007
Author(s)
田村謙太郎, 中原 健, 湯地洋行, 赤坂俊輔, 高水大樹, 西本宜央, 佐々木敦, 塚崎 敦, 大友 明, 川崎雅司, 尾沼猛儀, 秩父重英
Organizer
平成19年度金研ワークショップ 酸化亜鉛半導体テクノロジーの進歩
Place of Presentation
仙台
Year and Date
20071220-21
Description
「研究成果報告書概要(和文)」より
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[Presentation] PAMBE growth of ZnO based heterostructures on the +c-surface of ZnO substrates (invited)2007
Author(s)
K Nakahara, H. Yuji, K Tamura, S. Akasaka, D. Takamizu, Y. Nishimoto, T. Fujii, A. Sasaki, A. Tsukazaki, A. Ohtomo, M. Kawasaki, T. Onuma, H. Amaike, S. F. Chichibu
Organizer
IMR Workshop on ZnO Semiconductor Technology
Place of Presentation
Sendai, Japan
Year and Date
20071220-21
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Time resolved photoluminescence in MBE grown MgZnO epilayers2007
Author(s)
K. Tamura, K. Nakahara, H. Yuji, S. Akasaka, D. Takamizu, Y. Nishimoto, A. Sasaki, A. Tsukazaki, A. Ohtomo, M. Kawasaki, T. Onuma, S. F. Chichibu
Organizer
IMR Workshop on ZnO Semiconductor Technology
Place of Presentation
Sendai, Japan
Year and Date
20071220-21
Description
「研究成果報告書概要(欧文)」より
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[Presentation] PEDOT: PSS/ZnO Schottky junction2007
Author(s)
M. Nakano, A. Tsukazaki, R.Y. Gunji, K. Ueno, A. Ohtomo, T. Fukumura, M. Kawasaki
Organizer
The 2nd Korea University/IMR Student Exchange Seminar
Place of Presentation
Seoul, Korea
Year and Date
20071217-19
Description
「研究成果報告書概要(和文)」より
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[Presentation] PEDOT:PSS/ZnO Schottky junction2007
Author(s)
M. Nakano, A. Tsukazaki, R. Y. Gunji, K Ueno, A. Ohtomo, T. Fukumura, M. Kawasaki
Organizer
The 2nd Korea University / IMR Student Exchange Seminar
Place of Presentation
Seoul, Korea
Year and Date
20071217-19
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Quantum Hall effect in ZnO2007
Author(s)
A. Ohtomo, A. Tsukazaki, T. Kita, Y. Ohno, H. Ohno, M. Kawasaki
Organizer
2007 MRS Fall Meeting
Place of Presentation
Boston, USA
Year and Date
20071126-30
Description
「研究成果報告書概要(和文)」より
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[Presentation] Quantum Hall effect in ZnO2007
Author(s)
A. Ohtomo, A. Tsukazaki, T- Kita, Y. Ohno, H. Ohno, M. Kawasaki
Organizer
2007 MRS Fall Meeting
Place of Presentation
Boston, USA.
Year and Date
20071126-30
Description
「研究成果報告書概要(欧文)」より
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[Presentation] 導電性高分子/酸化物半導体ショットキー接合2007
Author(s)
中野匡規, 福村知昭, 上野和紀, 塚崎敦, 郡司遼祐, 大友 明, 川崎雅司
Organizer
2007年春季 第54回応用物理学関係連合講演会
Place of Presentation
相模原
Year and Date
20070327-30
Description
「研究成果報告書概要(和文)」より
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[Presentation] 分子線エピタキシー法(MBE)による(Mg)ZnOホモエピタキシー技術(招待)2007
Author(s)
中原 健, 湯地洋行, 田村謙太郎, 赤坂俊輔, 高水大樹, 田辺哲弘, 久保田将司, 尾沼猛儀, 秩父重英, 塚崎 敦, 大友 明, 川崎雅司
Organizer
2007年春季 第54回応用物理学関係連合講演会
Place of Presentation
相模原
Year and Date
20070327-30
Description
「研究成果報告書概要(和文)」より
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[Presentation] Homoepitaxial growth of MgZnO epilayers by molecular-beam epitaxy (invited)2007
Author(s)
K Nakahara, H. Yuji, K. Tamura, S. Akasaka, D. Takamizu, T. Tanabe, M. Kubota, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki
Organizer
The 54^<th> Annual Spring Meeting of Japanese Society of Applied Physics
Place of Presentation
Sagamihara, Japan
Year and Date
20070327-30
Description
「研究成果報告書概要(欧文)」より
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[Presentation] ZnOの量子ホール効果(招待)2007
Author(s)
大友 明, 塚崎 敦, 北 智洋, 大野裕三, 大野英男, 川崎雅司
Organizer
応物学会応用電子物性分科会研究例会
Place of Presentation
東京
Year and Date
2007-06-12
Description
「研究成果報告書概要(和文)」より
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[Presentation] Quantum Hall effect in ZnO (invited)2007
Author(s)
A. Ohtomo, A. Tsukazaki, T. Kita, Y. Ohno, H. Ohno, M. Kawasaki
Organizer
The annual meeting of JSAP Ohyoudenshibusseibunkakai
Place of Presentation
Tokyo Japan
Year and Date
2007-06-12
Description
「研究成果報告書概要(欧文)」より
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