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2007 Fiscal Year Final Research Report Summary

GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire Networks

Research Project

Project/Area Number 18360002
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionHokkaido University

Principal Investigator

HASEGAWA Hideki  Hokkaido University, Emeritus Professor (60001781)

Co-Investigator(Kenkyū-buntansha) AKAZAWA Masamichi  Research Center for Integrated Quantum Electronics, 量子集積エレクトロニクス研究センター, Associate Professor (30212400)
IKEBE Masayuki  Hokkaido University, Graduate School of Information Science and Technology, Associate Professor (20374613)
Project Period (FY) 2006 – 2007
Keywordshydrogen sensor / liquid sensor / nitride semiconductors / Schottky diode / Fermi level pinning / sensor network / integrated sensor / nanowire
Research Abstract

This project investigates key technologies for realization of GaN-based high-sensitivity chemical sensors and their on-chip integration using nanowires. The main conclusions are as follows: (1) Interface models on Schottky barrier formation are surveyed, and key issues related to AlGaN/GaN Schottky barriers including Fermi level pinning, Schottky barrier height (SBH) and reverse leakage currents are discussed. The current transport is explained by the thin surface barrier (TSB) model. Leakage currents can be reduced by the oxygen gettering process. (2) Pd Schottky barrier hydrogen sensors fabricated on AlGaN/GaN HEMT wafers exhibit unprecedented high sensitivities by applying the oxygen gettering process. (3) Its sensing mechanism is SBH reduction by interface dipole formed by atomic hydrogen which is produced at the Pd surface and diffuses to the Schottky interface. The rate limiting process for transient responses is surface reaction. Mathematical formulas for description of steady-s … More tate and transient response are given. (4) Sensitivity of AlGaN/GaN hydrogen sensors increases at higher temperatures, and they perform better than those by other major III-V semiconductors. (5) Slow transients are observed in hydrogen sensor diodes, and they can be explained by the dispersive transport due to time-continual hopping of electrons through surface states. This has led to a new model of current collapse in AlGaN/GaN HEMTs. (6)pH sensing HEMTs fabricated using an electrolyte/AlGaN gate structure, show nearly ideal Nernstian responses. Issues related to realization of bio-sensors using this structure are discussed. (7) For on-chip integration of sensors, implementation of a BDD (binary decision diagram) information processing architecture on hexagonal nanowire networks has been proposed. The proposal includes key elements such as basic integration unit, a sensor bridge, a sensor array structure, a selective MBE method for nanowire network formation and a wireless communication circuit integrated with an on-chip antenna. Their feasibilities have been proved. Less

  • Research Products

    (185 results)

All 2009 2008 2007 2006

All Journal Article (77 results) (of which Peer Reviewed: 38 results) Presentation (103 results) Book (5 results)

  • [Journal Article] 化合物半導体電子デバイスおよび関連材料研究の歴史的発展と将来展望(招待論文)2009

    • Author(s)
      長谷川英機
    • Journal Title

      電子情報通信学会和文論文誌C (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-III Nitride Schottky Barriers2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Korean Physical Society 54(印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] A fast method for calculating local histograms in image processing-Application to histogram equalization and image analysis-2009

    • Author(s)
      S. Shimoyama, M. Igarashi, M. Ikebe
    • Journal Title

      Journal of Signal Processing (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology 7

      Pages: 122-128

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Histrical Evolution and Future Prospects of Research on Compound Semiconductor Electron Devices and Related Materials (invited)2009

    • Author(s)
      H. Hasegawa
    • Journal Title

      IEICE Trans. Electron. Vol. J92-C (in press)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-Ill Nitride Schottky Barriers (invited)2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Korean Physical Society vol. 54 (in press)

      Pages: 10

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A fast method for calculating local histograms in image processing - Application to histogram equalization and image analysis -2009

    • Author(s)
      S. Shimoyama, M. Igarashi, M. Ikebe
    • Journal Title

      Journal of Signal Processing (in press)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Distributed Pinning Spot Model for Highk Insulator - III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol. 7

      Pages: 122-128

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 255

      Pages: 628-632

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 254

      Pages: 8005-8015

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1542-1550

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] PERFORMANCE COMPAEISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Proceedings of International Conference on Indium Phosphide and Related Materials 20

      Pages: 1-4

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1569-1578

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator- Semiconductor Structixre Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 2729-2732

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 1959-1961

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] The Design of High Frequency True Single Phase Clocking Divider-by-3 Circxiit2008

    • Author(s)
      M. Ikebe, Y. Takada, M. Ohuchi, J. Motohisa, E. Sano
    • Journal Title

      INTERNATIONAL JOURNAL OF CIRCUITS, SYSTEMS and SIGNAL PROCESSING 3

      Pages: 219-228

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Using Negative Feedback in CMOS Image Sensors to Detect Intra-frame Motion2008

    • Author(s)
      M. Ikebe, M. Igarashi, J. Motohisa
    • Journal Title

      Journal of the Institute of Image Information and Television Engineers 62

      Pages: 376-383

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] 化合物半導体界面におけるバンドアラインメントとフェルミ準位ピンニング(招待論文)2008

    • Author(s)
      長谷川英機
    • Journal Title

      表面科学 29

      Pages: 76-83

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Siuface Science 254

      Pages: 3653-3666

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Evaluation of Spatially Adaptive Dynamic-Range-Compression Processing2008

    • Author(s)
      S. Shimoyama, M. Ikebe, M. Igarashi
    • Journal Title

      Journal of Signal Processing 12

      Pages: 45-53

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 254, No. 24

      Pages: 8005-8015

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 255, No. 3

      Pages: 628-632

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN /GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 26, No. 4

      Pages: 1542-1550

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 26, No. 4

      Pages: 1569-1578

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 5, No. 9

      Pages: 2729-2732

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 5, No. 6

      Pages: 1959-1961

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] The Design of High Frequency True Single Phase Clocking Divider-by-3 Circuit2008

    • Author(s)
      M. Ikebe, Y. Takada, M. Ohuchi, J. Motohisa, E. Sano
    • Journal Title

      INTERNATIONAL JOURNAL OF CIRCUITS, SYSTEMS and SIGNAL PROCESSING Issue 3, Vol. 2

      Pages: 219-228

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Using Negative Feedback in CMOS Image Sensors to Detect Intra-frame Motion2008

    • Author(s)
      M. Ikebe, M. Igarashi, J. Motohisa
    • Journal Title

      Journal of the Institute of Image Information and Television Engineers vol. 62, No. 3

      Pages: 376-383

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 254

      Pages: 3653-3666

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces (invited)2008

    • Author(s)
      H. Hasegawa
    • Journal Title

      Hyomen Kagaku Vol. 29, No. 2

      Pages: 76-83

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Evaluation of Spatially Adaptive Dynamic-Range-Compression Processing2008

    • Author(s)
      S. Shimoyama, M. Ikebe, M. Igarashi
    • Journal Title

      Journal of Signal Processing Vol 12, No. 1

      Pages: 45-53

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN/GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1495-1503

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Formation of Ultrathin SiN_x/ Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1481-1490

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 4

      Pages: 2629-2633

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Evaluation of Digitally Controlled PLL by Clock-Period Comparison2007

    • Author(s)
      Y. Makihara, M. Ikebe, E. Sano
    • Journal Title

      IEICE Transactions on Electronics E90-C

      Pages: 522-528

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] A Wide-Dynamic-Range Compression Image Sensor With Negative-Feedback Resetting2007

    • Author(s)
      M. Ikebe, K. Saito
    • Journal Title

      IEEE Sensors Journal 7

      Pages: 897-904

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Journal Title

      physica status solidi (a) 204

      Pages: 1034-1040

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (111) B sxirfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 951-954

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111) B substrates2007

    • Author(s)
      I. Tamai, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 857-861

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Minority carrier diffusion lengths in MOVPE-grown n-and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors2007

    • Author(s)
      K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 787-790

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Control of Surfaces and Heterointerfaces of AlGaN/GaN System for Sensor Devices and Their On-Chip Integration on Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa
    • Journal Title

      Current Appl. Phys. 7

      Pages: 318-327

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Evaluation of Continuous-and Spatial-Correction for High-Dynamic-Range Compression2007

    • Author(s)
      K. Saitou, S. Shimoyama, M. Ikebe
    • Journal Title

      Journal of the Institute of Image Information and Television Engineers 61

      Pages: 325-331

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN /GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 25, No. 4

      Pages: 1495-1503

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Formation of Ultrathin SiNx/ Si Interface Control Double Layer on (001) and (Hi) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 25, No. 4

      Pages: 1481-1490

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 4, No. 7

      Pages: 2629-2633

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Evaluation of Digitally Controlled PLL by Clock-Period Comparison2007

    • Author(s)
      Makihara Y, Ikebe M, Sano E.
    • Journal Title

      IEICB TRANSACTIONS on Electronics Vol. E90-C, No. 6

      Pages: 522-528

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A Wide-Dynamic-Range Compression Image Sensor With Negative-Feedback Resetting2007

    • Author(s)
      Ikebe M., Saito K
    • Journal Title

      IEEE Sensors journal vol. 7, No. 5

      Pages: 897-904

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Journal Title

      physica status solidi (a) Vol. 204, No. 4

      Pages: 1034-1040

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (lll)B surfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol. 301-302

      Pages: 951-954

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (lll)B substrates2007

    • Author(s)
      Isao Tamai, Hideki Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol. 301-302

      Pages: 857-861

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors2007

    • Author(s)
      K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
    • Journal Title

      J. Cryst. Growth Vol. 298

      Pages: 787-790

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Control of Surfaces and Heterointerfaces of AlGaN/ GaN System for Sensor Devices and Their On-Chip Integration on Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa
    • Journal Title

      Current Appl. Phys. Vol. 7

      Pages: 318-327

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Evaluation of Continuous-and Spatial-Correction for High-Dynamic-Range Compression2007

    • Author(s)
      Saitou K, Shimoyama S, Ikebe M.
    • Journal Title

      Journal of the Institute of Image Information and Television Engineers vol. 61, No. 3

      Pages: 325-33l

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks2007

    • Author(s)
      H. Hasegawa, T. Sato, S. Kasai
    • Journal Title

      Lateral Alignment of Epitaxial Quantum Dots (Ed. Oliver G. Schmidt), Springer-Verlag, Berlin, Heidelberg Part II.6.2

      Pages: 639-664

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Evaluation of a multi-path maze-solving cellular automata by using a virtual slime-mold model2007

    • Author(s)
      Masayuki Ikebe, Yusuke Kitauchi
    • Journal Title

      Unconventional Computing 2007, Luniver Press, Beckington, UK

      Pages: 238-246

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] CMOS Image Sensor Using Negative-Feedback Resetting to Obtain Variably Smoothed Images2006

    • Author(s)
      M. Ikebe, K. Saito
    • Journal Title

      IEICE Transactions on Electronics E89-C

      Pages: 1662-1669

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Digital Controlled PLL by using Clock-Period Comparator2006

    • Author(s)
      Y. Makihara, M. Ikebe, E. Sano
    • Journal Title

      IEICE Transactions on Electronics E89-C

      Pages: 666-668

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Selective molecular beam epitaxy growth of size-and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006

    • Author(s)
      T. Sato, T. Oikawa, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 2087-2092

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure2006

    • Author(s)
      T. Kokawa, T. Sato, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 1972-1976

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 2148-2155

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer2006

    • Author(s)
      R. Jia, H. Hasegawa, N. Shiozaki, S. Kasai
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 2060-2068

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Future of heterostmcture microelectronics and roles of materials research for its progress (invited)2006

    • Author(s)
      H. Hasegawa, S. Kasai, T. Sato, T. Hashizume
    • Journal Title

      IEICE Trans. Electron. E89-C

      Pages: 874-882

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process2006

    • Author(s)
      T. Kimura, H. Hasegawa, T. Sato, T. Hashizume
    • Journal Title

      Jpn. J. of Appl. Phys. 45

      Pages: 3414-3422

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Gate control, surface leakage currents. and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates2006

    • Author(s)
      S. Kasai, J. Kotani, T. Hashizume, H. Hasegawa
    • Journal Title

      Journal of Electronic Materials 35

      Pages: 568-575

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111)B Surfaces2006

    • Author(s)
      M. Akazawa, N. Shiozaki, H. Hasegawa
    • Journal Title

      Journal de Physique IV 132

      Pages: 95-99

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devices2006

    • Author(s)
      N. Shiozaki, T. Sato, M. Akazawa, H. Hasegawa
    • Journal Title

      Journal de Physique IV 132

      Pages: 249-253

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] CMOS Image Sensor Using Negative-Feedback Resetting to Obtain Variably Smoothed Images2006

    • Author(s)
      Ikebe M., Saito K.
    • Journal Title

      IEICE TRANSACTIONS on Electronics Vol. E89-C, No. 11

      Pages: 1662-1669

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Digital Controlled PLL by using Clock-Period Comparator2006

    • Author(s)
      Makihara Y, Ikebe M, Sano E.
    • Journal Title

      IEICE TRANSACTIONS on Electronics Vol. E89-C, No. 10

      Pages: 666-668

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006

    • Author(s)
      T. Sato, T. Oikawa, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B Vol. 24, No. 4

      Pages: 2087-2092

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Liquid-phase sensors using open-gate AlGaN/ GaN high electron mobility transistor structure2006

    • Author(s)
      T. Kokawa, T. Sato, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B Vol. 24, No. 4

      Pages: 1972-1976

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B Vol. 24, No. 4

      Pages: 2148-2155

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer2006

    • Author(s)
      R. Jia, H. Hasegawa, N. Shiozaki, S. Kasai
    • Journal Title

      Journal of Vacuum Science & Technology B Vol. 24, No. 4

      Pages: 2060-2068

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Future of heterostructure microelectronics and roles of materials research for its progress (invited)2006

    • Author(s)
      H. Hasegawa, S. Kasai, T. Sato, T. Hashizume
    • Journal Title

      IEICE Trans. Electron. Vol. E89-C, No. 7

      Pages: 874-882

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process2006

    • Author(s)
      T. Kimura, H. Hasegawa, T. Sato, T. Hashizume
    • Journal Title

      Jpn. J. of Appl. Phys. Vol. 45, No. 4B

      Pages: 3414-3422

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates2006

    • Author(s)
      S. Kasai, J. Kotani, T. Hashizume, H. Hasegawa
    • Journal Title

      Journal of Electronic Materials Vol. 35, No. 4

      Pages: 568-575

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (ill) B Surfaces2006

    • Author(s)
      M. Akazawa, N. Shiozaki, H. Hasegawa
    • Journal Title

      Journal de Physique IV Vol. 132

      Pages: 95-99

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devipps2006

    • Author(s)
      N. Shiozaki, T. Sato, M. Akazawam, H. Hasegawa
    • Journal Title

      Journal de Physique IV Vol. 132

      Pages: 249-253

    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009 (SSNS'09)
    • Place of Presentation
      Shizukuishi, Iwate, Japan, January
    • Year and Date
      20090127-20090130
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] A QVGA-Size CMOS Intelligent Image Sensor using negative feedback resetting (invited)2009

    • Author(s)
      M. Ikebe, J. Motohisa
    • Organizer
      2009 International Symposium on Multimedia and Communication Technology (ISMAC2009)
    • Place of Presentation
      Bangkok, Thailand
    • Year and Date
      20090122-20090123
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN /GaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      20090111-20090115
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Capacitance-Voltage and Photoluminescence Study of High-k /III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009

    • Author(s)
      Masamichi Akazawa, Marcin Miczek, Boguslawa Adamowicz, Hideki Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      20090111-20090115
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009
    • Place of Presentation
      Shizukuishi Prince Hotel, Shizukuishi, Iwate, Japan
    • Year and Date
      2009-01-27
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Local Histogram Calculation in Constant Time for Adaptive Contrast Enhancement2009

    • Author(s)
      S. Shimoyama, M. Igarashi, M. Ikebe, J. Motohisa
    • Organizer
      2009 International Symposium on Multimedia and Communication Technology (ISMAC2009)
    • Place of Presentation
      Bangkok, Thailand
    • Year and Date
      2009-01-23
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Frequency and Phase Lock Operation using ClockPeriod Comparator2009

    • Author(s)
      Y. Makihara, M. Ikebe, J. Motohisa, E. Sano
    • Organizer
      2009 International Symposium on Multimedia and Communication Technology (ISMAC2009)
    • Place of Presentation
      Bangkok, Thailand
    • Year and Date
      2009-01-23
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] A QVGA-Size CMOS Intelligent Image Sensor Using Negative Eeedback Resetting (invited)2009

    • Author(s)
      M. Ikebe, J. Motohisa
    • Organizer
      2009 International Symposium on Multimedia and Communication Technology (ISMAC2009)
    • Place of Presentation
      Bangkok, Thailand
    • Year and Date
      2009-01-22
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Capacitance-Voltage and Photoluminescence study of High-k/III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009

    • Author(s)
      M. Akazawa, M. Miczek, B. Adamowicz, H. Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-13
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN/GaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-12
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] A 0.18um 3GHz True Single Phase Clocking Divider-by-3 Circuit2008

    • Author(s)
      M. Ikebe, J. Motohisa, E. Sano
    • Organizer
      The 7th WSEAS International Conference on Circuits, Systems, Electronics, Control and Signal Processing (CSECS'08)
    • Place of Presentation
      Puerto De La Cruz, Canary Islands, Spain
    • Year and Date
      20081215-20081217
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator - III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology QSSS-5)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20081113-20081118
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications (ISPA2008)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      20080826-20080829
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal- Insulator- Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2008 Electronic Material Conference (EMC2008)
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Year and Date
      20080625-20080627
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2008 Electronic Material Conference (EMC2008)
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Year and Date
      20080625-20080627
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      20080601-20080604
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs MetaHnsulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      20080601-20080604
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related Materials (IPRM08)
    • Place of Presentation
      Versailles, France
    • Year and Date
      20080525-20080529
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe (WOCSDICE2008)
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      20080518-20080521
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] A Fast Method of Local Histogram Calculation for Image Processing2008

    • Author(s)
      M. Igarashi, S. Shimoyama, M. Ikebe, J. Motohisa
    • Organizer
      2008 RISP International Workshop on Nonlinear Circuits and Signal Processing (NCSP'08)
    • Place of Presentation
      Gold Coast, Australia
    • Year and Date
      20080306-20080308
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
    • Place of Presentation
      Santa Fe, New Mexico, USA
    • Year and Date
      20080113-20080117
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
    • Place of Presentation
      Santa Fe, New Mexico, USA
    • Year and Date
      20080113-20080117
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] A 0.18μm 3GHz True Single Phase Clocking Divider-by-3 Circuit2008

    • Author(s)
      M. Ikebe, J. Motohisa, E. Sano
    • Organizer
      The 7th WSEAS International Conference on Circuits, Systems, Electronics, Control and Signal Processing (CSECS'08)
    • Place of Presentation
      Puerto De La Cruz, Canary Islands, Spain
    • Year and Date
      2008-12-15
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2008-11-15
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 14th Intemational Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2008-08-28
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] III-V半導体ナノェレクトロニクスの新展開(招待講演)2008

    • Author(s)
      長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市
    • Year and Date
      2008-08-17
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] On the Anomalous Admittance Behavior of Non-Silicon High-k MOS Structures2008

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市
    • Year and Date
      2008-08-17
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Phase lock operation by clock-period comparison for all digital PLL2008

    • Author(s)
      Y. Makihara, M. Ikebe, J. Motohisa, E. Sano
    • Organizer
      International Symposium on Topical Problems of Nonlinear Wave Physics (NWP)
    • Place of Presentation
      Nizhnij Novgorod, Russia
    • Year and Date
      2008-07-21
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal-Insulator-Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      Univer Sity of California Santa Barbara, Califomia, USA
    • Year and Date
      2008-06-26
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      UniverSity of Californmia Santa Barbara, Califomia, USA
    • Year and Date
      2008-06-26
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs Metal-Insulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-04
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-03
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Versailles, France
    • Year and Date
      2008-05-26
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2008-05-20
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] AIGaN/GaNプレーナ・ショットキダイオードの低速分散性過渡応答2008

    • Author(s)
      長谷川英機, 赤澤正道
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シリコン界面制御層を有するGaAs高誘電体MISキャパシタのアドミッタンス2008

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市
    • Year and Date
      2008-03-28
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] A Fast Method of Local Histogram Calculation for Image Processing2008

    • Author(s)
      M. Igarashi, S. Shimoyama, M. Ikebe, J. Motohisa
    • Organizer
      2008 RISP International Workshop on Nonlinear Circuits and Signal Processing(NCSP'08)
    • Place of Presentation
      Gold Coast, Australia
    • Year and Date
      2008-03-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Interface Control of High-k MOS Gate Stack for GaAs nanowire Transistors2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2008
    • Place of Presentation
      Hotel Appi Grand, Appi, Iwate, Japan
    • Year and Date
      2008-01-23
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico, USA
    • Year and Date
      2008-01-16
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico, USA
    • Year and Date
      2008-01-16
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 2007 International Symposium on Advanced nanodevices and Nanotechnology (ISANN2007)
    • Place of Presentation
      Waikoloa, Hawaii, USA
    • Year and Date
      20071202-20071207
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 34th International Symposium on Compound Semiconductors (ISCS-34)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      20071015-20071018
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of All-Digital PLL by Using Clock-Period Comparator2007

    • Author(s)
      Y. Makihara, M. Ikebe, E. Sano
    • Organizer
      The 14th Workshop on Synthesis And System Integration of Mixed Information technologies (SASIMI2007)
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      20071015-20071016
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Year and Date
      20070916-20070921
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hvdroeen sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Year and Date
      20070916-20070921
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th International Workshop on Semi- conductor Surface Passivation
    • Place of Presentation
      Zakopane, Poland
    • Year and Date
      20070916-20070919
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11)
    • Place of Presentation
      Manaus-Amazonas, Brazil
    • Year and Date
      20070819-20070824
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2007 Electronic Material Conference (EMC2007)
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      20070620-20070622
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Complete Removal of Fermi Level Pinning at Highk Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference (EMC2007)
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      20070620-20070622
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] An Overview on Band Alignment and Fermi Level Pinnine at Semiconductor Interfaces (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      Interntional Workshop on High-k Di- electrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Year and Date
      20070524-20070525
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Interntional Workshop on High-k Di- electrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Year and Date
      20070524-20070525
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] MBE Growth and Surface/Interface Control of Nanostructures for III-V Nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      MBE-Taiwan 2007
    • Place of Presentation
      Kaohsiung
    • Year and Date
      20070521-20070522
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of maze-searching cellular automata by using virtual slime-mold model2007

    • Author(s)
      Y. Kitauchi, M. Ikebe
    • Organizer
      The 20th Karuizawa Workshop on Circuits and Systems.
    • Place of Presentation
      Karuizawa, Japan
    • Year and Date
      20070423-20070424
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2007 (SSNS '07)
    • Place of Presentation
      Iwate, Japan
    • Year and Date
      20070123-20070126
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007

    • Author(s)
      Masamichi Akazawa, Hideki Hasegawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      20070114-20070148
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      Hideki Hasegawa, Masamichi Akazawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      20070114-20070118
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Silicon Interface Control Laver Based Surface Passivation Method and Related High-k MIS Gate stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      International Symposium on Advanced nanodevices and Nanotechnology
    • Place of Presentation
      Waikoloa Beach Marriot, Waikoloa, Hawaii, USA
    • Year and Date
      2007-12-03
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 34th International Symposium on Compound Semiconductor
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Year and Date
      2007-10-18
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      7th International Conference on Nitride Semiconductor
    • Place of Presentation
      MG Grand Hotel, Las Vegas, Nevada, USA
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hydrogen sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      7th International Conference on Nitride Semiconductor
    • Place of Presentation
      MG Grand Hotel, Las Vegas, Nevada, USA
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th International Workshop on Semiconductor Surface Passivation
    • Place of Presentation
      GEOVITA, Zakopane, Poland
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Si界面制御層によるHfO2/GaAs界面の制御2007

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第68回応用物理学学術講演会
    • Place of Presentation
      札幌市
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Pd/AlGaN/GaNショットキーダイオード形水素センサの大気中動作特性2007

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第68回応用物理学学術講演会
    • Place of Presentation
      札幌市
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces
    • Place of Presentation
      Tropical Eco Resort, Manaus-Amazonas, Brazil
    • Year and Date
      2007-08-20
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111) B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-21
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-20
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 7-GHz CMOS RF front-end monolithically integrated with inverted-F antenna for wireless sensor system2007

    • Author(s)
      M. Ikebe, D. Ueo, H. Osabe, K. Inafune, E. Sano, M. Koutani, M. Ikeda, K. Mashiko
    • Organizer
      The 14th International Conference on Solid-state Sensors, Actuators and Microsystems (TRANSDUCERS'07)
    • Place of Presentation
      Lyon, France
    • Year and Date
      2007-06-11
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] An Overview on Band Alignment and Fermi Level Pinning at Semiconductor Interfaces (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      International Workshop on High-k Dielectrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Year and Date
      2007-05-24
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      International Workshop on High-k Dielectrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Year and Date
      2007-05-24
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MBE Growth and Surface/Interface Control of Nanostructures for III-V Nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      MBE-Taiwan 2007
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2007-05-21
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Evaluation of maze-searching cellular automata by using virtual slime-mold model2007

    • Author(s)
      Y. Kitauchi, M. Ikebe
    • Organizer
      The 20th Karuizawa Workshop on Circuits and Systems
    • Place of Presentation
      Karuizawa, Japan
    • Year and Date
      2007-04-23
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MBE growth and in-situ XPS characterization of silicon interlayers for surfaces passivation of GaAs quantum devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 RCIQE International Seminar on"Advanced Semiconductor Materials and Devices, "
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2007-02-09
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2007
    • Place of Presentation
      Appi, Iwate, Japan
    • Year and Date
      2007-01-23
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      2007-01-17
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      2007-01-16
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 7-GHz inverted-F antenna monolithically integrated with CMOSLNA2006

    • Author(s)
      D. Ueo, H. Osabe, K. Inafune, M. Ikebe, E. Sano, M. Koutani, M. Ikeda, K. Mashiko
    • Organizer
      2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
    • Place of Presentation
      Perth, Australia
    • Year and Date
      20061212-20061215
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Dynamic range compressing for CMOS-image sensor with quasi-individual resetting2006

    • Author(s)
      M. Ikebe
    • Organizer
      2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
    • Place of Presentation
      Perth, Australia
    • Year and Date
      20061212-20061215
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Future Challenges and Surface Related Key Issues in III-V Semiconductor Nanoelectronics for Ubiquitous Network Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
    • Place of Presentation
      Perth, Australia
    • Year and Date
      20061206-20061208
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th Solid State Surfaces and Interfaces (SSSI2006)
    • Place of Presentation
      Smolenice Castle, Slovak Republic
    • Year and Date
      20061119-20061124
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Challenges of III-V Nanoelectronics towards Post Si CMOS Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      Japan-Germany Joint Workshop, 2006 "Nano-Electronics"
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20061030-20061101
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Technical Digest of International Workshop on Nitride Semiconductors (IWN2006)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      20061022-20061027
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] III-V Semiconductor Nanoelectronics for Post Si CMOS Era (invited panelist presentation)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference 2006 (IEEE NMDC'06)
    • Place of Presentation
      Gyeongu, Korea
    • Year and Date
      20061022-20061025
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111)B Surfaces for Passivation of GaAs Quantum Wire Devices2006

    • Author(s)
      Masamichi Akazawa, Hideki Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-20060908
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Selective MBE Growth of Hexagonal Networks of Trapezoidal and Triangular GaAs Nanowires on Patterned (111) B Substrates2006

    • Author(s)
      Isao Tamai, Hideki Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-20060908
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications (ISPA2006)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      20060826-20060829
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Oxygen Induced Gate Leakage in AlGaN/GaN HFETs and Its Suppression by a Novel Surface Control Process2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
    • Organizer
      2006 Electronic Materials Conference (EMC2006)
    • Place of Presentation
      Pennsylvania, USA
    • Year and Date
      20060628-20060630
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      20060514-20060517
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006

    • Author(s)
      H. Hasegawa, KMatsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      20060514-20060517
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Control of Group Ill-Nitride Surfaces and Interfaces for Sensor Applications and Nanostructure Formation (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      2nd International Workshop of NANO Systems Institute
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      20060508-20060510
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 7-GHz inverted-F antenna monolithically integrated with CMOSLNA2006

    • Author(s)
      D. Ueo, H. Osabe, K. Inafune, M. Ikebe, E. Sano, M. Koutani, M. Ikeda, K. Mashiko
    • Organizer
      2006 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS 2006)
    • Place of Presentation
      Tottori, Japan
    • Year and Date
      2006-12-15
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Dynamic range compressing for CMOS-image sensor with quasi-individual resetting2006

    • Author(s)
      M. Ikebe
    • Organizer
      2006 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS 2006)
    • Place of Presentation
      Tottori, Japan
    • Year and Date
      2006-12-14
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Future Challenges and Surface Related Key Issues in III-V Semiconductor Nanoelectronics for Ubiquitous Network Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
    • Place of Presentation
      Perth, Australia
    • Year and Date
      2006-12-07
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th Solid State Surfaces and Interfaces
    • Place of Presentation
      Smolenice Castle, Slovak Republic
    • Year and Date
      2006-11-20
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Challenges of III-V Nanoelectronics towards Post Si CMOS Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      Japan-Germany Joint Workshop, 2006"Nano-Electronics"
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2006-10-30
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2006-10-25
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] III-V Semiconductor Nanoelectronics for Post Si CMOS Era (nvited panelist presentation)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference 2006 (IEEE NMDC'06)
    • Place of Presentation
      Gyeongju, Korea
    • Year and Date
      2006-10-23
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111) B Surfaces for Passivation of GaAs Quantum Wire Devices2006

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2006-09-05
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Selective MBE Growth of Hexagonal Networks of Trapezoidal and Triangular GaAs Nanowires on Patterned (111) B Substrates2006

    • Author(s)
      I. Tamai, H. Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2006-09-05
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2006-08-27
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Oxygen Induced Gate Leakage in AlGaN/GaN HFETs and Its Suppression by a Novel Surface Control Process2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T., Hashizume
    • Organizer
      Electronic Materials Conference
    • Place of Presentation
      Pennsylvania, USA
    • Year and Date
      2006-06-29
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Control of Group III-Nitride Surfaces and Interfaces for Sensor Applications and Nanostructure Formation (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      2^<nd> International Workshop of NANO Systems Institute
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2006-06-09
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Organizer
      8th Intemational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      2006-05-16
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006

    • Author(s)
      H. Hasegawa, K. Matsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      2006-05-15
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] CCD/CMOSイメージセンサ高精細・高画質化技術と最新応用「第1章第2節蓄積容量変調型CMOSイメージセンサと広ダイナミックレンジ化」2008

    • Author(s)
      池辺将之
    • Total Pages
      16-24
    • Publisher
      技術情報協会(東京)
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] "Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks" in Lateral Alignment of Epitaxial Quantum Dots (Ed. Oliver G. Schmidt)2007

    • Author(s)
      H. Hasegawa, T. Sato, S. Kasai
    • Total Pages
      639-664
    • Publisher
      Springer-Verlag (Berlin, Heidelberg)
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] "Evaluation of a multi-path maze-solving cellular automata by using a virtual slime-mold model, " in Unconventional Computing 20072007

    • Author(s)
      M. Ikebe, Y. Kitauchi
    • Total Pages
      238-246
    • Publisher
      Luniver Press (Beckington, UK)
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] CMOSイメージセンサの最新動向-高性能化, 高機能化から応用展開まで「第5章広ダイナミックレンジ化」2007

    • Author(s)
      池辺将之
    • Total Pages
      89-108
    • Publisher
      CMC出版(東京)
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] 画像ラボVol. 18, No. 8, 「解説記事 ; 広ダイナミックレンジ画像圧縮手法の検討」2007

    • Author(s)
      池辺将之, 斉藤啓太, 下山荘介
    • Total Pages
      37-40
    • Publisher
      日本工業出版(東京)
    • Description
      「研究成果報告書概要(和文)」より

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Published: 2010-06-09  

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