2007 Fiscal Year Final Research Report Summary
FABRICATION OF STRUCTURAL CONTROLLED ORGANIC THIN FILM MEMORY
| Project/Area Number |
18360015
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
YOSHIDA Yuji National Institute of Advanced Industrial Science and Technology, AIST, PHOTONICS RESEARCH INSTITUTE, SENIOR RESEARCHER (80358340)
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| Co-Investigator(Kenkyū-buntansha) |
CHIKAMATSU Masayuki NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (AIST), RESEARCHER (10415713)
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| Project Period (FY) |
2006 – 2007
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| Keywords | ELECTRICAL AND ELECTRONIC MATERIALS / DATA STORAGE / NANOMATERIAL |
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| Research Abstract |
Organic thin film memory devices are investigated because of the advantages of low cost, high density, etc. In this study, we tried to newly develop organic memory with controlling tire thin film structure by molecular arrangement and nano-particle arrangements.
First a novel functionalized cellulose derivative has been synthesized for organic memory materials. A thin film device, where the cellulose derivative is sandwiched by two different metals, shows a drastic transition between low- and high-conductivity states upon the forward and backward sweeping of an external electric field. This reversible current transition behavior demonstrates a typical memory characteristic, with the ON/OFF(high and low-conductivity) states exhibiting a current ratio of four orders of magnitude.
Furthermore, we investigated a novel memory composed of ordered metal nano particle layers between organic dielectric layers. The advantage of the memory is to control the storage of electric charges by changing the number of metal nano-particles monolayer. The monolayer of metal nano-particles formed at water surface by Langmuir trough and transferred onto the organic layers and/or substrates. The thickness of nano particle layers was controlled by the number of stacking. The memory device composed of ITO/organic layer/metal nano-particle layers/organic layer/Al. As a result, we observed the typical I-V hysteresis curve as a memory effect. The area of hysteresis curve increased with increasing the stacking numbers of nano-particle layers. This indicates the stacking of metal nano particles controlled the amount of storage in organic memory device.
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