2008 Fiscal Year Final Research Report
Study on precise potential measurements by nano-probes and on investigation of electronic properties in nanostructures
| Project/Area Number |
18360019
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TAKAHASHI Takuji The University of Tokyo, 生産技術研究所, 准教授 (20222086)
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| Project Period (FY) |
2006 – 2008
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| Keywords | ナノプローブ / ケルビンプローブフォース顕微鏡 / 高精度電位測定 / ナノ構造中電子状態 / 量子準位 / 電荷蓄積効果 / 光起電力 / 少数キャリア特性 |
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| Research Abstract |
We have added our original improvements on Kelvin probe microscopy (KFM) which is one kind of nano-probe technieques in order to ensure high accuracy, high spatial resolution, and high reliability in potential measurements. By means of this method, potential distribution around self-assembled InAs quantum dots was investigated and some electronic properties like a charging effect in the quantum dots were discussed. In addition, we observed photovoltaic properties on multicrystalline Si solar cell materials by KFM operated under light illumination and found the degradation of minority carrier dynamics around the grain boundary.
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