Developments of new complex materials using mime and interface diffusion of the supersaturated alloy elements in thin films

2007 Fiscal Year Final Research Report Summary

• Project/Area Number: 18360324
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Composite materials/Physical properties
• Research Institution: Kyoto University
• Principal Investigator: ITO Kazuhiro Kyoto University, Graduate School of Engineering Dept of Materials Srience and Engineering, Associate Prof. (60303856)
• Co-Investigator(Kenkyū-buntansha): TSUKIMOTO Susumu Kyoto Univ., Graduate School of Engineering, Dept of Materials Science and Engineering, Assistant Prof (50346087)
• Project Period (FY): 2006 – 2007
• Keywords: Thin Films / Cu Interconnects / Self-formation / Ohmic Contacts / SiC

Research Abstract

Thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiO_2/Si substrates after annealing at elevated temperatures. This technique was called "self-formation of the diffusion barrier," which is attractive for fabrication of ultra-large scale integrated (ULSI) interconnects. Furthermore, we investigated the applicability of this technique to Cu(Ti) alloy films which were deposited on the four low dielectric constant (low-k) dielectric layers which are potential dielectric layers of future ULSI-Si devices. The microstructures were analyzed by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), and correlated with the electrical properties of the Cu(Ti) films. It was concluded that the Ti-rich interface layers were formed in all the Cu(Ti)/dielectric-layer samples. The primary factor to control composition of the self-formed Ti-rich interface layers was the C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds (TiC and TiSi). Crystalline TiC was formed on the dielectric layers with a C concentration higher than 17 at.%.

Research Products

• [Journal Article] Self-formation of Ti-rich interfacial layers at Cu(Ti)/low-k interfaces (2008)
  • Author(s): K. Kohama, K. Ito, S. Tsukimoto, K. Mori, K. Maekawa and M. Murakami
  • Journal Title: MRS Proceedings (in press)
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Simultaneous formation of n-and p-type ohmic contacts to 4H-SiC using the binary Ni/Al system (2008)
  • Author(s): K. Ito, T. Onishi, H. Takeda, S. Tsukimoto, M. Konno, Y. Suzuki and M. Murakami
  • Journal Title: MRS Proceedings (in press)
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Self-formation of Ti-rich interfacial layers at Cu(Ti)/low-k interfaces (2008)
  • Author(s): K., Kohama, K., Ito, S., Tsukimoto, K., Mori, K., Maekawa, M., Murakami
  • Journal Title: MRS Proceedings (in press)
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Simultaneous formation of n- and p-type ohmic contacts to 4H-SiC using the binary Ni/A1 system (2008)
  • Author(s): K., Ito, T., Onishi, H., Taloda, S., Tsukimoto, M., Konno, Y., Suzuki, M., Morakami
  • Journal Title: MRS Proceedings (in press)
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Effect of annealing ambient on self-formation mechanism of diffusion barrier layers used in Cu(Ti)interconnects (2007)
  • Author(s): S. Tsukimoto, T. Kabe, K. Ito and M. Murakami
  • Journal Title: Journal of Electronic Materials 36 Pages: 258-265
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Effects of substrate materials on self-formation of Ti-rich interface layers in Cu(Ti)alloy films (2007)
  • Author(s): K. Ito, S. Tsukimoto, T. Kabe, K. Tada and M. Murakami
  • Journal Title: Journal of Electronic Materials 36 Pages: 606-613
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Resistivity reduction of Cu interconnects (2007)
  • Author(s): K. Ito, S. Tsukimoto, M. Moriyama and M. Murakami
  • Journal Title: Stress-Induced Phenomena in Metallization, AIP Conference Proceedings 945 Pages: 1-10
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Fabrication of Cu(Ti)alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process (2007)
  • Author(s): S. Tsukimoto, T. Onishi, K. Ito, M. Konno, T. Yaguchi, T. Kamino and M. Murakami
  • Journal Title: Journal of Electronic Materials 36 Pages: 1658-1661
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Effect of annealing ambient on self-formation mechanism of diffusion barrier layers used in Cu(Ti) interconnects (2007)
  • Author(s): S., Tsukimoto, T., Kabe, K., Ito, M., Murakami
  • Journal Title: Journal of Electronic Materials 36 Pages: 258-265
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Effects of substrate materials on self-formation of Ti-rich interface layers in Cu(Ti) alloy films (2007)
  • Author(s): K., Ito, S., Tsukimoto, T., Kabe, K., Tada, M., Murakami
  • Journal Title: Journal of Electronic Materials 36 Pages: 606-613
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Resistivity reduction of Cu interconnects (2007)
  • Author(s): K., Ito, S., Tsukimoto, M., Moriyama, M., Murakami
  • Journal Title: AIP Conference Proceedings 945 Pages: 1-10
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication of Cu(Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process (2007)
  • Author(s): S., Tsukirootu, T., Onishi, Klin, M., Konno, T., Yaguchi, Kamino, M., Mtuakami
  • Journal Title: Journal of Electronic Materials 36 Pages: 1658-1661
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Cu(Ti)合金微細配線における極薄バリア層の自己組織形成 (2006)
  • Author(s): 着本 享、大西隆、伊藤 和博、村上 正紀、今野充、矢口紀恵、上野武志
  • Journal Title: 日本金属学会会報(まてりあ) 45 Pages: 879
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Self formation of ultra-thin barrier layers in Cu(Ti) alloy interconnects (in Japanease) (2006)
  • Author(s): S., Tsukimoto, T., Onisli, K., Itn, M., Mutakami, M., Kaono, T., Yaguchi, T., Kamino
  • Journal Title: Materia Japan 45 Pages: 879-879
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] 低濃度Cu(TD合金薄膜における自己組織化拡散バリア層形成反応の基板依存性 (2008)
  • Author(s): 小濱和之, 佐藤大樹, 伊藤和博, 他
  • Organizer: 日本金属学会
  • Place of Presentation: 武蔵工業大学
  • Year and Date: 2008-03-28
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Effect of substrates on self-formation of barrier layers in low Ti content Cu(Ti)/Si samples (2008)
  • Author(s): K., Kohama, T., Sato, K., Ito
  • Organizer: Japan Institute of Metals 2008 Anneal, Meeting
  • Place of Presentation: Musashi Institute of Technology
  • Year and Date: 2008-03-28
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Self-formation of Ti-rich layers at Cu(Ti)/low-k interfaces (2008)
  • Author(s): K. Kohama, K. Ito, S. Tsukimoto, K. Mori, K. Maekawa and M. Murakami
  • Organizer: 2008 Materials Research Society Spring Meeting
  • Place of Presentation: Moscone West and San Francisco Marriott
  • Year and Date: 2008-03-26
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Simultaneous formation of n-and p-type ohmic contacts to 4H-SiC using the binary Ni/Al system (2008)
  • Author(s): K. Ito, T. Onishi, H. Takeda, S. Tsukimoto, M. Konno, Y. Suzuki and M. Murakami
  • Organizer: 2008 Materials Research Society Spring Meeting
  • Place of Presentation: Moscone West and San Francisco Marriott
  • Year and Date: 2008-03-26
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Self-formation of Ti-rich layers at Cu(TO/low-k interfaces (2008)
  • Author(s): K., Kohama, K., Ito, S., Thukimoto, K., Mori, K., Maekawa, M., Murakami
  • Organizer: 2008 MRS Spring Meeting
  • Place of Presentation: Moscone West and San Francisco Marriott
  • Year and Date: 2008-03-26
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Simultaneous formation of n- and p-type ohmic contacts to 4H-SiC using the binary Ni/AI system (2008)
  • Author(s): K., Ito, T., Onishi, H., Takeda, Sakukimoto, M., Kceno, Y., Suzuki, M., Muraliami
  • Organizer: 2008 MRS Spring Meeting
  • Place of Presentation: Moscone West and San Francisco Marriott
  • Year and Date: 2008-03-26
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Cu(Ti)合金薄膜における自己組織化バリア層の形成に及ぼす基板絶縁膜の影響 (2007)
  • Author(s): 小濱和之, 伊藤和博, 着本享, 他
  • Organizer: 日本金属学会
  • Place of Presentation: 岐阜大学
  • Year and Date: 2007-09-20
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] p,n-SiC両伝導型にオーミック性を示すNi-A1コンタクト材の伝導機構 (2007)
  • Author(s): 武田英久, 大西利武, 伊藤和博, 着本享, 村上正紀
  • Organizer: 日本金属学会
  • Place of Presentation: 岐阜大学
  • Year and Date: 2007-09-20
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Effect of substrates on self-formation of barrier layers in Cu(Ti)/Si samples (2007)
  • Author(s): K., Kohama, K., Ito, S., Tsukimoto
  • Organizer: Japan Institute of Metals 2007 Anneal, Meeting
  • Place of Presentation: Gifu Univ
  • Year and Date: 2007-09-20
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Simultaneous formation of n- and p-type Ni-Al ohmic contacts to 4H-SiC (2007)
  • Author(s): H., Takeda, T., Onishi, K., Ito, S., Tsukimoto, M., Murakami
  • Organizer: Japan Institute of Metals 2007 Anneal, Meeting
  • Place of Presentation: Gifu Univ
  • Year and Date: 2007-09-20
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Resistivity reduction of Cuinterconnects (2007)
  • Author(s): K. Ito, S. Tsukimoto, M. Moriyama and M. Murakami
  • Organizer: 9th International Workshop on Stress-Induced Phenomena in Metallization
  • Place of Presentation: ぱるるプラザ京都
  • Year and Date: 2007-04-05
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Resistivity reduction of Cu interconnects (2007)
  • Author(s): K., Ito, S., Tsukimoto, M., Moriyama, M., Murakami
  • Organizer: 9th International Workshop on Stress -Induced Phenomena in Metallization
  • Place of Presentation: PaRuRu Plaza Kyoto
  • Year and Date: 2007-04-05
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Reduction of electrical resistivity of Cu interconnects (2007)
  • Author(s): M. Murakami, M. Moriyama, S. Tsukimoto, K. Ito, and T. Onichi
  • Organizer: Advanced Metallizations and Interconnect Technologies, in Honor of Prof. K. N. Tu's 70th Birthday(TMS 2007)
  • Place of Presentation: オーランド(アメリカ)
  • Year and Date: 2007-02-28
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Reduction of electrical resistivity of Cu interconnects (2007)
  • Author(s): M., Murekami, M., Moriyama, S., Tsukimoto, K., Ito, T., Onichi
  • Organizer: Advanced Metallivations and Interconnect Tachnologies in Honor of Prof K N. 'Tu's 70th Birthday (TMS 2007)
  • Place of Presentation: Orland
  • Year and Date: 2007-02-28
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] 高圧アニールによるスパッタCu(Ti)合金薄膜材の微細配線化 (2006)
  • Author(s): 着本享, 大西隆, 伊藤和博, 村上正紀
  • Organizer: 日本金属学会
  • Place of Presentation: 新潟大学五十嵐キャンパス
  • Year and Date: 2006-09-18
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Fabrication of Cu(Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process (2006)
  • Author(s): S., Tsukimoto, T., Onishi, K., Ito, M., Murakami
  • Organizer: Japan Institute of Metals 2006 Anneal Meeting
  • Place of Presentation: Niigata Univ
  • Year and Date: 2006-09-18
  • Description: 「研究成果報告書概要(欧文)」より
• [Patent(Industrial Property Rights)] 半導体配線の製造方法 (2006)
  • Inventor(s): 大西隆、武田実佳子、水野雅夫、着本享、可部達也、森田敏文、守山実希、伊藤和博、村上正紀
  • Industrial Property Rights Holder: 神戸製鋼所・京都大学
  • Industrial Property Number: 特願2006-192153
  • Filing Date: 2006-07-12
  • Description: 「研究成果報告書概要(和文)」より