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2008 Fiscal Year Final Research Report

Induced Charge Evaluation for the Development of Particle Detectors Fabricated on Silicon Carbide

Research Project

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Project/Area Number 18360458
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Nuclear engineering
Research InstitutionJapan Atomic Energy Agency

Principal Investigator

OHSHIMA Takeshi  Japan Atomic Energy Agency, 量子ビーム応用研究部門, 研究主幹 (50354949)

Co-Investigator(Kenkyū-buntansha) ONODA Shinobu  独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究職 (30414569)
Co-Investigator(Renkei-kenkyūsha) ITOH Hisayoshi  独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究主席 (40354930)
KAMIYA Tomihiro  独立行政法人日本原子力研究開発機構, 放射線高度利用施設部, 研究主幹 (70370385)
SATOH Takahiro  独立行政法人日本原子力研究開発機構, 放射線高度利用施設部, 研究職 (10370404)
NAKANO Itsuo  岡山大学, 自然科学研究所, 教授 (90133024)
Project Period (FY) 2006 – 2008
Keywords放射線理工学 / 耐放射線性検出器
Research Abstract

耐放射線性炭化ケイ素(SiC)粒子検出器開発に必要な基礎データとして、ベータ線、アルファ線及びイオン入射により、SiCダイオードに発生する電荷の収集効率(CCE)を調べた。アルファ線等では、ほぼ100%のCCEを観測しSiCの検出器応用の有効性を実証した。一方、Niのような重イオンではSiCの物性に起因するCCEの低下が見出された。更に、電子線等により損傷を加えたSiCダイオードのCCE低下を調べ、優れた耐性を明らかにした。

  • Research Products

    (29 results)

All 2009 2008 2007 2006 Other

All Journal Article (14 results) (of which Peer Reviewed: 11 results) Presentation (15 results)

  • [Journal Article] Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices due to Radiations2009

    • Author(s)
      S. Onoda, N. Iwamoto, T. Hirao, K. Kawano, K. Kojima, T. Ohshima
    • Journal Title

      American Institute of Physics Conference Proceedings 1099

      Pages: 1010-1013

    • Peer Reviewed
  • [Journal Article] Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV2009

    • Author(s)
      S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, I. Nakano
    • Journal Title

      Materials Science Forum 615-617

      Pages: 861-864

    • Peer Reviewed
  • [Journal Article] Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes2009

    • Author(s)
      S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
    • Journal Title

      Materials Science Forum 600-603

      Pages: 1039-1042

    • Peer Reviewed
  • [Journal Article] Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation2009

    • Author(s)
      N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami, I. Nakano, K. Kawano
    • Journal Title

      Materials Science Forum 600-603

      Pages: 1043-1046

    • Peer Reviewed
  • [Journal Article] NIEL Analysis of Charge Collection Efficiency in Silicon Carbide Diodes Damaged by Gamma-Rays, Electrons and Protons2008

    • Author(s)
      T. Ohshima, S. Onoda, N. Iwamoto, K. Kojima, K. Kawano
    • Journal Title

      Proc. the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications

      Pages: 175-178

  • [Journal Article] Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions2007

    • Author(s)
      S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kawano
    • Journal Title

      IEEE Transactions on Nuclear Science 54

      Pages: 2706-2713

    • Peer Reviewed
  • [Journal Article] Decrease of Charge Collection due to Displacement Damage by Gamma Rays in a 6H-SiC Diode2007

    • Author(s)
      S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
    • Journal Title

      IEEE Transactions on Nuclear Science 54

      Pages: 1953-1960

    • Peer Reviewed
  • [Journal Article] Decrease in Ion Beam Induced Charge of 6H-SiC Diodes2007

    • Author(s)
      S. Onoda, N. Iwamoto, T. Ohshima, T. Hirao, K. Kawano
    • Journal Title

      Proc. of the 26th Sympo. on Mater. Sci. and Engineer. Res. Center of Ion Beam Tech. Hosei Univ.

      Pages: 35-40

  • [Journal Article] Charge Collection Efficiency of 6H-SiC Diodes Damaged by Electron Irradiation2007

    • Author(s)
      N. Iwamoto, T. Ohshima, S. Onoda, S. Hishiki, M. Murakami, I. Nakano, K. Kawano
    • Journal Title

      Proc. of the 26th Sympo. on Mater. Sci. and Engineer. Res. Center of Ion Beam Tech. Hosei Univ.

      Pages: 27-30

  • [Journal Article] Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions2007

    • Author(s)
      T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, S. Hishiki, T. Hirao, T. Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I Nakano, G. Wagner, H. Itoh
    • Journal Title

      Materials Science Forum 556-557

      Pages: 913-916

    • Peer Reviewed
  • [Journal Article] Transient Currents Generated by Heavy Ions With Hundreds of MeV2006

    • Author(s)
      S. Onoda, T. Hirao, J. S. Laird, K. Mishima, K. Kawano, H. Itoh
    • Journal Title

      IEEE Transactions on Nuclear Science 53

      Pages: 3731-3737

    • Peer Reviewed
  • [Journal Article] Analysis of Transient Current in SiC Diodes Irradiated with MeV Ions2006

    • Author(s)
      S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, K. Mishima, N. Iwamoto, T. Kamiya, K. Kawano
    • Journal Title

      Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application

      Pages: 115-

    • Peer Reviewed
  • [Journal Article] Observation of Charge Collection Efficiency of 6H-SiC n+p Diodes Irradiated with Au-Ions2006

    • Author(s)
      N. Iwamoto, T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, S. Hishiki, T. Hirao, T. Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, G. Wagner, H. Itoh, K. Kawano
    • Journal Title

      Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application

      Pages: 185-

    • Peer Reviewed
  • [Journal Article] Comparative Study of Transient Current Induced in SiC p+n and n+p Diodes by Heavy Ion Microbeams

    • Author(s)
      T. Ohshima, N. Iwamoto, S. Onoda, T. Kamiya, K. Kawano
    • Journal Title

      Nucl. Inst. Meth. B (in press)

    • Peer Reviewed
  • [Presentation] NIEL Analysis of Charge Collection Efficiency in Silicon Carbide Diodes Damaged by Gamma-Rays, Electrons and Protons2008

    • Author(s)
      T. Ohshima, S. Onoda, N. Iwamoto, K. Kojima, K. Kawano
    • Organizer
      The 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
    • Place of Presentation
      Tsukuba (Japan)
    • Year and Date
      20081215-17
  • [Presentation] Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV2008

    • Author(s)
      S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, I. Nakano
    • Organizer
      7th European Conference on Silicon Carbide and Related Materials (ECSCRM)
    • Place of Presentation
      Barcelona(Spain)
    • Year and Date
      20080907-11
  • [Presentation] 数百MeV 級高エネルギー重イオンによる6H-SiCダイオードの電荷収集効率の測定2008

    • Author(s)
      小野田忍、大島武、岩本直也、平尾敏雄、児島一聡、河野勝泰
    • Organizer
      008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      春日井(日本)
    • Year and Date
      20080902-05
  • [Presentation] Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices due to Radiations2008

    • Author(s)
      S. Onoda, N. Iwamoto, T. Hirao, K. Kawano, K. Kojima, T. Ohshima
    • Organizer
      20th International Conference on the Application of Accelerators in Research and Industry (CAARI)
    • Place of Presentation
      Fort Worth(USA)
    • Year and Date
      20080810-15
  • [Presentation] Comparative Study of Transient Current Induced in SiC p+n and n+p Diodes by Heavy Ion Microbeams2008

    • Author(s)
      T. Ohshima, N. Iwamoto, S. Onoda, T. Kamiya, K. Kawano
    • Organizer
      11th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA)
    • Place of Presentation
      Debrecen(Hungary)
    • Year and Date
      20080720-25
  • [Presentation] Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation2007

    • Author(s)
      N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami, I. Nakano, K. Kawano
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2007
    • Place of Presentation
      Otsu (Japan)
    • Year and Date
      20071014-19
  • [Presentation] Transient Response to High Energy Heavy Ions in 6H-SiC n+p diodes2007

    • Author(s)
      S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2007
    • Place of Presentation
      Otsu (Japan)
    • Year and Date
      20071014-19
  • [Presentation] 電子線照射された6H-SiC pnダイオードの電荷収集効率2007

    • Author(s)
      岩本直也、小野田忍、菱木繁臣、大島武、村上允、中野逸夫、河野勝泰
    • Organizer
      2007年(平成19年)秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道(日本)
    • Year and Date
      20070904-08
  • [Presentation] 高エネルギー重イオンによるTIBIC測定技術の開発II2007

    • Author(s)
      小野田忍、平尾敏雄、菱木繁臣、大島武
    • Organizer
      2007年(平成19年)秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道(日本)
    • Year and Date
      20070904-08
  • [Presentation] Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diodes2007

    • Author(s)
      S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
    • Organizer
      2007 IEEE Nuclear and Space Radiation Effects Conference
    • Place of Presentation
      Hawaii (USA)
    • Year and Date
      20070723-27
  • [Presentation] 電子線照射により損傷を導入した6H-SiCダイオードの電荷収集効率2007

    • Author(s)
      N. Iwamoto, T. Ohshima, S. Onoda, S. Hishiki, M. Murakami, I. Nakano, K. Kawano
    • Organizer
      第26回法政大学イオンビーム工学研究所シンポジウム
    • Place of Presentation
      東小金井(日本)
    • Year and Date
      2007-12-13
  • [Presentation] 6H-SiCダイオードにおけるイオンビーム誘起電荷量の低下2007

    • Author(s)
      小野田忍, 岩本直也, 大島武, 平尾敏雄,河野勝泰
    • Organizer
      第26回法政大学イオンビーム工学研究所シンポジウム
    • Place of Presentation
      東小金井(日本)
    • Year and Date
      2007-12-13
  • [Presentation] Analysis of Transient Current in SiC Diodes Irradiated with MeV Ions2006

    • Author(s)
      S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, K. Mishima, N. Iwamoto, T. Kamiya, K. Kawano
    • Organizer
      7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
    • Place of Presentation
      Takasaki(Japan)
    • Year and Date
      20061200
  • [Presentation] Observation of Charge Collection Efficiency of 6H-SiC n+p Diodes Irradiated with Au-Ions2006

    • Author(s)
      N. Iwamoto, T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, S. Hishiki, T. Hirao, T. Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, G. Wagner, H. Itoh, K. Kawano
    • Organizer
      7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
    • Place of Presentation
      Takasaki (Japan)
    • Year and Date
      20061200
  • [Presentation] Transient Currents Generated by Heavy Ions With Hundreds of MeV2006

    • Author(s)
      S. Onoda, T. Hirao, J. S. Laird, K. Mishima, K. Kawano, H. Itoh
    • Organizer
      2006 IEEE Nuclear and Space Radiation Effects Conference
    • Place of Presentation
      Florida(USA)
    • Year and Date
      20060717-21

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Published: 2010-06-10   Modified: 2016-04-21  

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