2007 Fiscal Year Final Research Report Summary
Neutron reflectivity study on buried hetero-interface of D monolayer and growth of novel hetero-structure
| Project/Area Number |
18510104
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
ASAOKA Hidehito Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (40370340)
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| Co-Investigator(Kenkyū-buntansha) |
TAKEDA Masayasu Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (70222099)
SOYAMA Kazuhiko Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (90343912)
SHAMOTO Shin-ichi Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (90235698)
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| Project Period (FY) |
2006 – 2007
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| Keywords | Crystal Growth / Surface and Interface / Nano materials / Hydrogen / Neutron |
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| Research Abstract |
Strontium and SrO are well-known templates on Si for SrTiO3, a highly-desirable transistor gate material. When stacked on Si, Sr layer becomes amorphous due to its large lattice mismatch of 12%. By introducing a monatomic hydrogen layer on Si, we succeeded in making the Sr (and subsequent SrO) layer (s) grow epitaxially with atomically abrupt interface. However, it is somewhat mysterious how the monatomic hydrogen layer behaves to manage this large mismatch. In order to identify its behavior, we have employed compound analysis by neutron reflectometer as well as multiple-internal-reflection fourier-transform infrared spectroscopy (MIR-FTIR) to investigate the buried hetero-interface of Sr grown on Si (111) 1x1: monohydride. We have found difference between the H- and D-terminated substrates in the reflectivity profiles, and changes in Si-H bonding features with the Sr growth (mainly at the initial monolayer stage) in the FTIR spectra. From these, existence of buried H layer at the hetero-interface is confirmed with its bonding environment.
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