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2008 Fiscal Year Final Research Report

Studies on epitaxial growth of GaAsN by controlling the surface steps

Research Project

  • PDF
Project/Area Number 18560017
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionToyota Technological Institute

Principal Investigator

OHSHITA Yoshio  Toyota Technological Institute, 大学院・工学研究科, 准教授 (10329849)

Project Period (FY) 2006 – 2008
Keywords電子デバイス / 電子・電気材料 / 半導体物性 / 結晶成長 / 太陽電池
Research Abstract

将来の高効率太陽電池実現のために必要な材料であるInGaNAs系材料の高品質化を目的として研究を行った.結晶成長中における表面反応の制御、具体的には、ステップ密度やステップ端原子などを制御する、あるいは、ガス供給の仕方の(断続供給など)や光照射による表面での成膜種の拡散を促進することが、結晶中の不純物濃度低減ならびに窒素起因の欠陥濃度の減少に有効であることが明らかになり、結晶の高品質化が可能となった.

  • Research Products

    (6 results)

All 2008 2007

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (3 results)

  • [Journal Article] Effects of residual carbon and hydrogen atoms on electrical property of GaAs Ngrown by chemical beam epitaxy2008

    • Author(s)
      H. Suzuki, K. Nishimura, K. Saito, Y. Ohshita, N. Kojima, and M. Yamaguchi
    • Journal Title

      Jpn, J.Appl. Phys 47巻

      Pages: 6910-6913

    • Peer Reviewed
  • [Journal Article] Carbon reduction of in GaAsN thin films by flow-rate modulated chemical beamepitaxy2008

    • Author(s)
      K. Nishimura, H. Suzuki, K. Saito, Y. Ohshita, N. Kojima, and M. Yamaguchi
    • Journal Title

      47巻

      Pages: 2072-2075

    • Peer Reviewed
  • [Journal Article] Carbonincorporation process in GaAsN films grown by chemical beam epitaxy using MMH or DMH as N precursor2007

    • Author(s)
      H. Suzuki, K. Nishimura, H. S. Lee, Y. Ohshita, and M. Yamaguchi
    • Journal Title

      Thin Solid Films 515巻

      Pages: 5008-5011

    • Peer Reviewed
  • [Presentation] Effect of surface steps on N incorporation processes of GaAsN films grown in chemical beam epitaxy2008

    • Author(s)
      T. Hashiguchi
    • Organizer
      Renewable energy 2008
    • Place of Presentation
      Korea
    • Year and Date
      2008-10-14
  • [Presentation] Effects of residual carbon and hydrogen atom on electrical property of GaAsN grown by chemical beam epitaxy2007

    • Author(s)
      H. Suzuki, K. Nishimura, T. Hashiguchi, Y. Ohshita, N. Kojima, and M. Yamaguchi
    • Organizer
      17th International Photovoltaic Science and Engineering Conference
    • Year and Date
      2007-12-04
  • [Presentation] THE EFFECT OF RESIDUAL IMPURITIES ON ACCEPTOR CONCENTRATION IN GAASN FILMS GROWN BY CHEMICAL BEAM EPITAXY2007

    • Author(s)
      K. Nishimura
    • Organizer
      17th International Photovoltaic Science and Engineering Conference
    • Year and Date
      2007-12-04

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Published: 2010-06-10   Modified: 2016-04-21  

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