• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2008 Fiscal Year Final Research Report

Bond Engineering in Prediction of Surface Phase Diagram and Its ApPlication to Nano-Structure Formation

Research Project

  • PDF
Project/Area Number 18560020
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionMie University

Principal Investigator

ITO Tomonori  Mie University, 大学院・工学研究科, 教授 (80314136)

Co-Investigator(Kenkyū-buntansha) AKIYAMA Toru  三重大学, 大学院・工学研究科, 助教 (40362363)
Project Period (FY) 2006 – 2008
Keywords量子論的アプローチ / 半導体表面構造 / 状態図 / 計算科学 / ナノ構造 / 成長機構
Research Abstract

ボンドエンジニアリング概念に基づく量子論的アプローチにより, ナノ構造形成に重要な「場」としての半導体表面を対象に, 成長条件である温度, 分子線圧力の関数としての表面状態図の理論予測を行った。具体的には, GaAs(001)表面構造予測と計算手法の妥当性の検証, GaAs(lll)表面構造予測とSiドーピング機構, GaN(0001)表面構造予測とGaN成長初期過程, 化合物半導体ナノワイヤにおける構造多形の成因, 積層欠陥四面体形成機構, SiC(ll-20)表面上のAIN薄膜形成過程および構造多形等について検討を行い, ボンドエンジニアリング概念に基づく表面状態図予測のナノ構造形成機構解明への有用性を示した。

  • Research Products

    (43 results)

All 2009 2008 2007 2006

All Journal Article (19 results) (of which Peer Reviewed: 19 results) Presentation (23 results) Book (1 results)

  • [Journal Article] Abinitio-based apProach to structural change of compound semiconductor surfaces during MBE growth2009

    • Author(s)
      T.Ito, T.Akiyama, and K.Nakamura
    • Journal Title

      J. Cryst. Growth 311

      Pages: 698-701

    • Peer Reviewed
  • [Journal Article] Ab initio-based approach to reconstructions of the InP(111)Asurface : Role of hydrogen atoms passivating surface dangling bonds2008

    • Author(s)
      T.Akiyama, T.Kondo, H.Tatematsu, K.Nakamura, and T.Ito
    • Journal Title

      Phys. Rev B78

      Pages: 205318-1-7

    • Peer Reviewed
  • [Journal Article] Empirical potential approach to the fbrmation of 3C-SiC(111)/Si(llO)2008

    • Author(s)
      T.Ito, T.Kanno, T.Akiyama, K.Nakamura, A.Konno, and M.Suemitsu
    • Journal Title

      Appl. Phys Express 1

      Pages: 111201-1-3

    • Peer Reviewed
  • [Journal Article] Stmctures and electronic properties of Si nanowires grown along the[110]direction : Role of surface reconstruction2008

    • Author(s)
      T.Akivama, K.Nakamura, and T.Ito
    • Journal Title

      Surf. Sci 602

      Pages: 3033-3037

    • Peer Reviewed
  • [Journal Article] Theoretical investigations fbr zinc blende-wurtzite polytypism in GaAs layers at Au/GaAs(111)interfaces2008

    • Author(s)
      Y.Haneda, T.Akiyama, K.Nakamura, and T.Ito
    • Journal Title

      Appl. Surf. Sci 254

      Pages: 7746-7749

    • Peer Reviewed
  • [Journal Article] Theoretical investigations on the fbrmation of wurtzite segments in group III-V semiconductor nanowires2008

    • Author(s)
      T.Yamashita, K.Sano, T.Akivama, K.Nakamura, and T.Ito
    • Journal Title

      ApPl. Surf. Sci 254

      Pages: 7668-7671

    • Peer Reviewed
  • [Journal Article] An ab initio-based approach to phase diagram calculations fbr GaAs(001)-(2x4)Y surfaces2008

    • Author(s)
      T.Ito, T.Akiyama, and K.Nakamura
    • Journal Title

      Appl. Surf. Sci 254

      Pages: 7663-7667

    • Peer Reviewed
  • [Journal Article] An ab initio-based approach to phase diagram calculations fbr GaN(0001)2008

    • Author(s)
      T.Ito, T.Nakamura, T.Akivama, and K.Nakamura
    • Journal Title

      Appl. Surf. Sci 254

      Pages: 7659-7662

    • Peer Reviewed
  • [Journal Article] Ab initio-based approach to initial growth processes on GaAs(111)B-(2×2)surfaces : Self-surfactant effbct of Ga adatoms revisited2008

    • Author(s)
      H.Tatematsu, K.Sano, T.Akivama, K.Nakamura, and T.Ito
    • Journal Title

      Phys. Rev B77

      Pages: 233306-1-4

    • Peer Reviewed
  • [Journal Article] Electronic structures and optical properties of GaN and ZnO nanowires ffom first principles2008

    • Author(s)
      T.Akivama, A.J.Freeman, K.Nakamura, and T.Ito
    • Journal Title

      J. Phys. : Confbrence Series 100

      Pages: 052056-1-4

    • Peer Reviewed
  • [Journal Article] An empirical interatomic potential approach to structural stability ofZnS and ZnSe nanowires2007

    • Author(s)
      T.Akivama, K.Sano, K.Nakamura and T.Ito
    • Journal Title

      Jpn. J. Appl. Phys 46

      Pages: 1783-1787

    • Peer Reviewed
  • [Journal Article] A simple systematization of structural stability for A^NB^<8-N>compounds2007

    • Author(s)
      T.Ito, T.Akiyama, and K.Nakamura
    • Journal Title

      Jpn. J. Appl. Phys 46

      Pages: 345-347

    • Peer Reviewed
  • [Journal Article] Orientation and size dependence on structural stability in silicon nanowires : Atransferable tight-binding calculation study2007

    • Author(s)
      S.Maeda, T.Akivama, K.Nakamura and T.Ito
    • Journal Title

      J. Cryst. Growth 301-302

      Pages: 871-875

    • Peer Reviewed
  • [Journal Article] A Monte Carlo simulation study of twinning fbrmation in InP nanowires2007

    • Author(s)
      K.Sano, T.Akivama, K.Nakamura and T.Ito
    • Journal Title

      J. Cryst. Growth 301-302

      Pages: 862-865

    • Peer Reviewed
  • [Journal Article] An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)2007

    • Author(s)
      H.Joe, T.Akiyama, K.Nakamura, K.Kanisawa and T.Ito
    • Journal Title

      J. Cryst. Growth 301-302

      Pages: 837-840

    • Peer Reviewed
  • [Journal Article] Stacking sequence prefbrence of pristine and hydrogen-terminated Si nanowires on Si(111)substrates2006

    • Author(s)
      T.Akiyama, K.Nakamura, and T.Ito
    • Journal Title

      Phys. Rev B74

      Pages: 033307-1-4

    • Peer Reviewed
  • [Journal Article] Stmctural stability and electronic structures of InP nanowires : Role of surface dangling bonds on nanowire facets2006

    • Author(s)
      T.Akiyama, K.Nakamura, and T.Ito
    • Journal Title

      Phys. Rev B73

      Pages: 235308-1-6

    • Peer Reviewed
  • [Journal Article] A simple approach to polytypes of SiC and its application to nanowires2006

    • Author(s)
      T.Ito, K.Sano, T.Akivama, and K.Nakamura
    • Journal Title

      Thin Solid Films 508

      Pages: 243-246

    • Peer Reviewed
  • [Journal Article] An empirical potential approach to wurtzite-zinc blende polytypism in group III-V semiconductor nanowires2006

    • Author(s)
      T.Akivama, K.Nakamura, and T.Ito
    • Journal Title

      Jpn. J. Appl. Phys 45

      Pages: L275-L278

    • Peer Reviewed
  • [Presentation] InAs(111)A表面上のIn吸着原子に起因する電子状態の理論検討2009

    • Author(s)
      秋山亨, 中村浩次, 伊藤智徳, 蟹澤聖
    • Organizer
      日本物理学会第63回年次大会
    • Place of Presentation
      東京
    • Year and Date
      2009-03-28
  • [Presentation] Stability of Mg-incorporated InN surfaces : First-principles study2009

    • Author(s)
      T.Akivama, K.Nakamura, T.Ito, J.H.Song, and A.J.Freeman
    • Organizer
      American Physical Society March Meeting
    • Place of Presentation
      Pittsburgh
    • Year and Date
      2009-03-18
  • [Presentation] Theoretical investigation on the structural stability of GaP nanowires with{111}facets2008

    • Author(s)
      T.Yamashita, T.Akivama, K.Nakamura, and T.Ito
    • Organizer
      The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
    • Place of Presentation
      松江
    • Year and Date
      2008-10-29
  • [Presentation] An ab initio-based approach to reconstructions of the InP(111)Asurfaces2008

    • Author(s)
      T.Akivama, T.Kondo, K.Nakamura, and T.Ito
    • Organizer
      The 4^<th> Vacuum and Surface Science Confbrence of Asia and Australia
    • Place of Presentation
      松江
    • Year and Date
      2008-10-29
  • [Presentation] Systematic theoretical investigation fbr adsorption behavior of A1 and N atoms on 4H-SiC(11-20)surfaces2008

    • Author(s)
      T.Ito, T.Akivama, K.Nakamura, and T.Ito
    • Organizer
      The 4^<th> Vacuum and Surface Science Confbrence of Asia and Australia
    • Place of Presentation
      松江
    • Year and Date
      2008-10-28
  • [Presentation] An ab initio-based approach to adsorption-desorption behavior of Si atoms on GaAs(111)A-(2×2)surfhces2008

    • Author(s)
      H.Tatematsu, T.Akivama, K.Nakamura, and T.Ito
    • Organizer
      The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
    • Place of Presentation
      松江
    • Year and Date
      2008-10-28
  • [Presentation] Au/GaAs(111)界面におけるGaAs層の構造安定性に関する理論検討2008

    • Author(s)
      秋山亨, 羽田優也, 中村浩次, 伊藤智徳
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Year and Date
      2008-09-03
  • [Presentation] An empirical potential approach to the formation of InAs stacking-fault tetrahedron in InAs/GaAs(111)2008

    • Author(s)
      T.Ito, H.Joe, T.Akivama, and K.Nakamura
    • Organizer
      Intemational Conference on Electronic Materials 2008
    • Place of Presentation
      Sydney
    • Year and Date
      2008-07-30
  • [Presentation] An ab initio-based apProach to the stability of GaN(0001)surfhces under Ga-rich conditions2008

    • Author(s)
      T.Ito, T.Akivama,and K.Nakamura
    • Organizer
      The 2^<nd> International Symposium on Growth of III-Nitrides
    • Place of Presentation
      修善寺
    • Year and Date
      2008-07-07
  • [Presentation] Ab initio-based apProach to structural change of compound semiconductor surfaces during MBE growth2008

    • Author(s)
      T.Ito, T.Akiyama, and K.Nakamura
    • Organizer
      The 4^<th> Asian Confbrence on Crystal Growth and Crystal Technology
    • Place of Presentation
      仙台
    • Year and Date
      2008-05-23
  • [Presentation] Au/GaAs(111)界面におけるウルツ鉱構造GaAs層の形成に関する理論検討2008

    • Author(s)
      秋山亨, 羽田優也, 中村浩次, 伊藤智徳
    • Organizer
      2008年春季第55回応用物理学関係連合講演会
    • Place of Presentation
      船橋
    • Year and Date
      2008-03-27
  • [Presentation] ナノエピタキシーの物理的理解2008

    • Author(s)
      伊藤智徳
    • Organizer
      日本物理学会第63回年次大会
    • Place of Presentation
      東大阪
    • Year and Date
      2008-03-23
  • [Presentation] Stnlcture and electronic properties of silicon nanowires grown along the[110]direction : Role of surface reconstructions2008

    • Author(s)
      T.Akivama, K.Nakamura, and T.Ito
    • Organizer
      American Physical Society March Meeting
    • Place of Presentation
      New Orleans
    • Year and Date
      2008-03-10
  • [Presentation] Theoretical investigations on the formation of wurtzite segments in group III-V semiconductor nanowires2007

    • Author(s)
      T.Yamashita, K.Sano, T.Akivama, K.Nakamura, and T.Ito
    • Organizer
      9^<th> International Confbrence on Atomically Controlled Surfaces InterfacesandNanostnlctures
    • Place of Presentation
      東京
    • Year and Date
      2007-11-13
  • [Presentation] An ab initio-based approach to phase diagram calculations fbr GaAs(001)-(2x4)Y surfaces2007

    • Author(s)
      T.Ito, T.Akiyama, and K.Nakamura
    • Organizer
      9^<th> International Confbrence on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      東京
    • Year and Date
      2007-11-13
  • [Presentation] First-principles study of electronic structures and optical properties of GaN and ZnO nanowires2007

    • Author(s)
      T.Akivama, K.Nakamura, T.Ito, and A.J.Freeman
    • Organizer
      13^<th> International Confbrence on Sur血ce Science
    • Place of Presentation
      Stockholm
    • Year and Date
      2007-07-04
  • [Presentation] InPナノワイヤにおける回転双晶形成に関する理論検討2007

    • Author(s)
      秋山亨, 佐野孝典, 中村浩次, 伊藤智徳
    • Organizer
      2007年春季第54回応用物理学関係連合講演会
    • Place of Presentation
      相模原
    • Year and Date
      2007-03-28
  • [Presentation] GaAs(001)-(2×4)Y表面構造安定性に関する基本検討2007

    • Author(s)
      伊藤智徳, 秋山亨, 佐野孝典, 中村浩次
    • Organizer
      2007年春季第54回応用物理学関係連合講演会
    • Place of Presentation
      相模原
    • Year and Date
      2007-03-28
  • [Presentation] Electronic structures and optical properties of GaN and ZnO nanowires2007

    • Author(s)
      T.Akivama, K.Nakamura, T.Ito, and A.J.Freeman
    • Organizer
      American Physical Society March Meeting
    • Place of Presentation
      Denver
    • Year and Date
      2007-03-07
  • [Presentation] Orientation and size dependence on structural stability in silicon nanowires : A transferable tight-binding calculation study2006

    • Author(s)
      S.Maeda, T.Akivama, K.Nakamura, and T.Ito
    • Organizer
      14^<th> International Confbrence on Molecular Beam Epitaxy
    • Place of Presentation
      東京
    • Year and Date
      2006-09-05
  • [Presentation] An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)2006

    • Author(s)
      H.Joe, T.Akiyama, K.Nakamura, and T.Ito
    • Organizer
      14^<th> International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      東京
    • Year and Date
      2006-09-05
  • [Presentation] イオン性を用いたA^<8-N>B^N化合物の安定構造状態図作成への簡単なアプローチ2006

    • Author(s)
      伊藤智徳, 秋山亨, 中村浩次
    • Organizer
      2006年秋季第67回応用物理学会学術講演会
    • Place of Presentation
      相模原
    • Year and Date
      2006-08-29
  • [Presentation] Structures and energetics of ZnO, ZnS and ZnSe nanowires : An empirical interatomic potential apProach2006

    • Author(s)
      T.Akiyama, K.Nakamura, and T.Ito
    • Organizer
      26^<th> International Confbrence on the Physics of Semiconductors
    • Place of Presentation
      Vienna
    • Year and Date
      2006-07-26
  • [Book] 材料デバイス工学2008

    • Author(s)
      妹尾允史, 伊藤智徳(分担報筆)
    • Total Pages
      2章(16-47), 4章, 5章(91-147)
    • Publisher
      コロナ社

URL: 

Published: 2010-06-10   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi