2009 Fiscal Year Final Research Report
Quasi-ballistic transport modeling of emerging MOSFETs with new channel materials and new device architectures
| Project/Area Number |
18560334
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kobe University |
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Principal Investigator |
TSUCHIYA Hideaki Kobe University, 大学院・工学研究科, 准教授 (80252790)
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| Project Period (FY) |
2006 – 2009
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| Keywords | 電子デバイス / 集積回路 |
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| Research Abstract |
This project focused on the development of a quantum mechanical design tool and a device design guideline to realize ultra-high performance information technology by introducing new channel materials and new device architectures. We found that an optimum structural design of source and drain electrodes is necessary for III-V MOSFETs to outperform the conventional Si-MOSFETs. Furthermore, in Si nanowire MOSFETs with gate-all-around architecture, the source-drain tunneling effects were found to possibly limit the further downscaling below 10nm gate length.
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Research Products
(21 results)
