2009 Fiscal Year Final Research Report
Quasi-ballistic transport modeling of emerging MOSFETs with new channel materials and new device architectures
| Project/Area Number |
18560334
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Kobe University |
|---|
Principal Investigator |
TSUCHIYA Hideaki Kobe University, 大学院・工学研究科, 准教授 (80252790)
|
|---|
| Project Period (FY) |
2006 – 2009
|
| Keywords | 電子デバイス / 集積回路 |
|---|
| Research Abstract |
This project focused on the development of a quantum mechanical design tool and a device design guideline to realize ultra-high performance information technology by introducing new channel materials and new device architectures. We found that an optimum structural design of source and drain electrodes is necessary for III-V MOSFETs to outperform the conventional Si-MOSFETs. Furthermore, in Si nanowire MOSFETs with gate-all-around architecture, the source-drain tunneling effects were found to possibly limit the further downscaling below 10nm gate length.
|
