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2007 Fiscal Year Final Research Report Summary

Preparation of Phosphor thin films for Inorganic Electroluminescent Devices using Combnatrial Sputtering

Research Project

Project/Area Number 18560704
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionKanazawa Institute of Technology

Principal Investigator

MIYATA Toshihiro  Kanazawa Institute of Technology, College of Engineering, Professor (30257448)

Co-Investigator(Kenkyū-buntansha) MINAMI Tadatsugu  Kanazawa Institute of Technology, College of Engineering, Professor (70113032)
Project Period (FY) 2006 – 2007
KeywordsThin Film / Electroluminescence / Combinatrial / Sputtering / Phosphor
Research Abstract

Newly developed Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors are shown to be promising as an emitting layer of blue-emitting thin-film EL devices. To examine this potential, PL and EL measurements were conducted on ((Ba_2SiO_4)_<1->x-(Mg_2SiO_4)x): Eu multicomponent oxide phosphor thin films deposited on BaTiO_3 ceramic sheets using a combinatorial rf magnetron sputtering deposition (rf-MSD). It was found that promoting the formation of a Ba_3MgSi_2O_8 host lattice by optimizing the chemical composition (Mg/(Ba+Mg) atomic ratio) in the phosphor thin-film preparation and by postannealing at a high temperature results in blue emissions being exhibited in both the PL and EL of Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors. Intense blue PL emission peaking at around 436 nm was observed from Ba_3MgSi_2O_8: Eu multicomponent oxide phosphor thin films that were postannealed at 1000℃ in an Ar+H_2(5%) gas atmosphere. A bluish-green EL emission corresponding to CIE chromaticity coordinates of (x=0.24, y=0.29) was exhibited from an EL device fabricated using a Ba_3MgSi_2O_8: Eu thin film postannealed at 1000℃ as the emitting layer. In addition, Blue-emitting oxide phosphors for thin-film electroluminescent (TFEL) devices were newly developed using Bi-activated multicomponent oxides. An intense photoluminescence for blue emission was observed from Bi-activated indate phosphor thin films optimized the deposition and postannealing conditions. The blue emission peak was also observed in TFEL devices fabricated using a Bi-activated indate phosphor thin-film emitting layer postannealed at a temperature above approximately 900℃

  • Research Products

    (4 results)

All 2007

All Journal Article (2 results) (of which Peer Reviewed: 1 results) Presentation (2 results)

  • [Journal Article] Bi-Activated Phosphors Using Various Oxide Host Materials for Thin-Film EL Devices2007

    • Author(s)
      H.Fukada, S.Matsui, T.Miyata and T.Minami
    • Journal Title

      Proc.the 14th Int.Display Workshops, (2007)

      Pages: 937-940

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Bi-Activated Phosphors Using Various Oxide Host Materials for Thin-Film EL Devices2007

    • Author(s)
      H. Fukada, S. Matsui, T. Miyata, T. Minami
    • Journal Title

      Proc. the 14th Int. Display Workshops

      Pages: 937-940

    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Blue-Emitting Ba_3MgSi_2O_8:Eu Phosphors for Thin-Film EL Devices2007

    • Author(s)
      H.Fukada, S.Matsui, T.Miyata and T.Minami
    • Organizer
      The 14th Int.Display Workshops
    • Place of Presentation
      札幌
    • Year and Date
      2007-12-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Blue-Emitting Ba_3MgSi_2O_8 : Eu Phosphors for Thin-Film EL Devices.2007

    • Author(s)
      H. Fukada, S. Matsui, T. Miyata, T. Minami
    • Organizer
      The 14th Int. Display Workshops
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2007-12-06
    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2010-02-04  

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