Study of InSb-related CMOS on Si substrate with surface reconstruction controled epitaxy

2021 Fiscal Year Final Research Report

• Project/Area Number: 18H01496
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: University of Toyama
• Principal Investigator: Mori Masayuki 富山大学, 学術研究部工学系, 准教授 (90303213)
• Project Period (FY): 2018-04-01 – 2022-03-31
• Keywords: InSb / MOSFETs / 表面再構成制御成長法 / GaSb / 界面準位

Outline of Final Research Achievements

To reduce the effect of the density of states at the interface between InSb and Al2O3, we tried to insert the thin GaSb layer between InSb and Al2O3. The devices with the structure showed lower device performance compared with the previous one (without thin GaSb layer). So it is necessary to study the reason.
We tried to fabricate p-MOSFETs using GaSb/Si, and characterized their device performance. We succeeded in fabricating p-MOSFETs. However, their device performance and/or yield was not good. So it is necessary to improve device performance of p-MOSFETs for realization of CMOS.

Free Research Field

半導体薄膜成長及びそのデバイス応用

Academic Significance and Societal Importance of the Research Achievements

微細化による性能向上が限界に近付きつつあるSi半導体に代わるデバイス材料として、Siよりも優れた電気特性を持つInSbやGaSbに着目し、高速デバイスの作製を目指した。すでに実現しているSi上に成長させたInSbを用いたトランジスタの性能向上のために、InSbの面内配向性の向上や、結晶構造の変更を試みた。また、歩留まりや性能は良くないものの、Si上に成長したGaSbを用いたp型MOSFETデバイスの作製に成功した。今後これらのデバイスを用いたCMOS FETの実現に向けてそれぞれのデバイスの特性を向上させる必要がある。