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2020 Fiscal Year Final Research Report

Clarification of physical properties in semi-insulating SiC wafers and fabrication of complimentary junction field-effect transistors

Research Project

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Project/Area Number 18H03779
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Review Section Medium-sized Section 21:Electrical and electronic engineering and related fields
Research InstitutionKyoto University

Principal Investigator

Tsunenobu Kimoto  京都大学, 工学研究科, 教授 (80225078)

Co-Investigator(Kenkyū-buntansha) 西 佑介  京都大学, 工学研究科, 助教 (10512759)
Project Period (FY) 2018-04-01 – 2021-03-31
Keywords炭化珪素 / 半絶縁性基板 / イオン注入 / 電界効果トランジスタ / 耐環境素子
Outline of Final Research Achievements

SiC is a promising wide bandgap semiconductor for integrated circuits (ICs) operational under harsh environment such as high temperature. In this study, basic subjects on the SiC material, especially semi-insulating SiC, for IC applications and fabrication of SiC-based complimentary junction field-effect transistors (CJFETs), which we proposed, have been investigated. Based on several studies on ion implantation and device designing to avoid short-channel effects, a world-first SiC CJFET inverter has been demonstrated. The SiC CJFET inverter consisting of normally-off n- and p-channel JFETs exhibited good characteristics with very low static power consumption at a power-supply voltage as low as 1.4 V.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

Si集積回路の進展は著しく、エレクトロニクス社会の根幹を支えるハードウェアとなっているが、Siの物性限界により、250℃以上の高温や放射線下で安定に動作する集積回路を作製することは困難である。高温動作に関しては、エンジン、ボイラー等の燃焼炉制御、資源(石油など)採掘など、放射線環境動作に関しては、原子炉モニター、宇宙探査などの応用があり、根強いニーズがある。本研究を通じて、SiC半導体の高温電子物性を明らかにでき、さらに低消費電力の相補型トランジスタ(CJFET)の室温~300℃動作を実証した。本研究により、SiC CJFETを用いた耐環境動作集積回路の基盤を築くことができた。

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Published: 2022-01-27  

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