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2018 Fiscal Year Annual Research Report

酸化濃縮法を用いた高性能薄膜Ge-On-Insulator FETに関する研究

Research Project

Project/Area Number 18J14311
Research InstitutionThe University of Tokyo

Principal Investigator

JO KWANGWON  東京大学, 工学系研究科, 特別研究員(DC2)

Project Period (FY) 2018-04-25 – 2020-03-31
KeywordsGe / SiGe / GOI / Strain / Ge condnesantion / pMOSFET / ETB
Outline of Annual Research Achievements

Firstly, the effects of thinning SiGe thickness in the initial structures before Ge condensation have been quantitatively studied from the viewpoints of remaining strain and electric properties of GOI pMOSFET for improved Ge condensation method. Then, it is found that further high and uniform compressive strain through our proposal.We have systemically examined characteristics of strained SGOI pMOSFETs by Ge condensatio. Pure GOI pMOSFETs provide the maximum mobility because of band nature of Ge. The record hole mobility has been obtained for GOI pMOSFETs.
Next, in order to realize ETB (S)GOI pMOSFETs, 100 % GOI and SGOI with Ge fractions of 49 to 96 % were thinned by using plasma oxidation/etching and TMAH etching respectively. After thinning process, we have successfully formed uniform ETB SGOIs down to 2 nm or less. We have confirmed strain tendency as function GOI or SGOI thickness down to 0.5 nm, by thinning process. Then, we have fabricated strained ETB (S)GOI pMOSFET ranging from 10 to 2nm with high on/off ratio and high mobility in that Ge thickness. We have achieved great improvement of on/off ratio with thinner body. It is found that the present strained SGOI pMOSFETs provide the record hole mobility at tbody from 2 nm to 10 nm. In our case, record on/off ratio, which is even comparable with those of fin devices, has been obtained in the present devices with high strain and low crystal defect. Therefore, we could consider planar ETB GOI MOSFET is still promising as future logic devices.

Current Status of Research Progress
Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

Fabrication of GOI MOSFET on qulified substrate.
Based on former result (optimized GOI film), high performance UTB
GOI MOSFET will be fabricated. In addition, optimized process on front-gate structure will be established with technologies of the gate stacks, engineered channel (UTB, nanowire-Fin) formation, and low resistivity S/D formation. And then, these devices should be implemented on tensile strained SOI or <110> oriented SOI to obtain further improvement.
On the other hand, recently, we have developed tensiley strained GOI with lowering oxidation temperature. We can also expect to achieve high performance nMOSFET.

Strategy for Future Research Activity

UTB GOI MOSFETs and multi gated GOI FETs such as Nanowire-FinFETs are quite promising device structures for the
future technology nodes. In order to sufficiently suppress the SCE, it is necessary to reduce the GOI thickness or their
dimension. Actually, the local Ge condensation is applicable to not only thinning planar channel but also narrowing 3-D
Ge channels, which are mandatory for advanced GOI FETs.
Also, <110>-oriented GOI film can be obtained by condensation technique using <110>-SOI substrates as a starting substrate. The <110> oriented planes theoretically offer the enhanced hole mobility. The highest mobility is obtained for channel along the <110> plane.

  • Research Products

    (9 results)

All 2019 2018

All Journal Article (3 results) (of which Int'l Joint Research: 1 results) Presentation (5 results) (of which Int'l Joint Research: 2 results) Funded Workshop (1 results)

  • [Journal Article] Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method2019

    • Author(s)
      Jo Kwang-Won、Kim Wu-Kang、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      Applied Physics Letters

      Volume: 114 Pages: 062101~062101

    • DOI

      https://doi.org/10.1063/1.5068713

    • Int'l Joint Research
  • [Journal Article] Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method2018

    • Author(s)
      Jo K.-W.、Kim W.-K.、Takenaka M.、Takagi S.
    • Journal Title

      018 IEEE Symposium on VLSI Technology

      Volume: 1 Pages: 195~196

    • DOI

      10.1109/VLSIT.2018.8510646

  • [Journal Article] (Invited) Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies2018

    • Author(s)
      Takagi Shinichi、Kim Wu-Kang、Jo Kwang-Won、Matsumura Ryo、Takaguchi Ryotaro、Katoh Takumi、Bae Tae-Eon、Kato Kimihiko、Takenaka Mitsuru
    • Journal Title

      ECS Transactions

      Volume: 86 Pages: 75~86

    • DOI

      10.1149/08607.0075ecst

  • [Presentation] Impact of SiGe Layer Thickness in Starting Substrates on Properties of Ultrathin Body Ge-on-insulator pMOSFETs fabricated by Ge Condensation2018

    • Author(s)
      Kwang-Won Jo, W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method2018

    • Author(s)
      Kwang-Won Jo, W.-K. Kim, M. Takenaka, and S. Takagi
    • Organizer
      Symposia on VLSI Technology
    • Int'l Joint Research
  • [Presentation] Extremely-Thin Body GOI structures and MOSFETs2018

    • Author(s)
      S. Takagi, W.-K. Kim, Kwang-Won Jo, X. Yu and M. Takenaka
    • Organizer
      11th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
  • [Presentation] MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI2018

    • Author(s)
      S. Takagi, K. Kato, W.-K. Kim, Kwang-Won Jo, R. Matsumura, R. Takaguchi, D.-H. Ahn, T. Gotow and M. Takenaka
    • Organizer
      48th European Solid-State Device Research Conference (ESSDERC)
  • [Presentation] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018

    • Author(s)
      S. Takagi, W.-K. Kim, Kwang-Won Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
    • Organizer
      AiMES 2018 (ECS and SMEQ Joint International Meeting)
  • [Funded Workshop] 2018 IEEE International Electron Devices Meeting2018

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Published: 2019-12-27  

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