Improving thermoelectric properties of amorphous and nanocrystal oxide semiconductor thin films

2020 Fiscal Year Final Research Report

• Project/Area Number: 18K04939
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Nara Institute of Science and Technology
• Principal Investigator: Uenuma Mutsunori 奈良先端科学技術大学院大学, 先端科学技術研究科, 准教授 (20549092)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Keywords: 熱電材料 / 酸化物 / 薄膜

Outline of Final Research Achievements

The thermoelectric characteristics of amorphous oxide semiconductor thin films the effects of lamination with different materials and the effects of crystallinity were evaluated. It was found that the pressure conditions at the sputtering are derived from the difference in the relationship between the energy potential barrier and the Fermi level in the material. There was no significant difference in thermoelectric performance between the amorphous and nanocrystalline states. On the other hand, it was also clarified that the use of the TFT structure shows thermoelectric performance exceeding that of a single film.

Free Research Field

熱電発電素子

Academic Significance and Societal Importance of the Research Achievements

本研究は、情報化社会において重要となるIoTセンサー機器の自立型電源として応用可能な発電技術である。さらに熱電発電技術は、身近なエネルギー利用に対する意識をグリーンエネルギーへ変革させるものであり、本研究がさらに進展すれば、Society 5.0の実現やSDGs達成に貢献する。