2020 Fiscal Year Annual Research Report
Heavy group III, IV, and V elements triangular lattice atomic layers on semiconductor surfaces - a new kind of 2D Dirac materials
| Project/Area Number |
18K04941
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Project Period (FY) |
2018-04-01 – 2021-03-31
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| Keywords | boron / triangular lattice / borophene / stanene |
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| Outline of Annual Research Achievements |
The investigation of triangular lattices on SiC(0001) has been carried on in 2020. Unfortunately, lots of experimental work could not be done as planned due to COVID-19 pandemic. Instead we concentrated more on computational part of research. Another group III element had been taken into account, namely boron. Recent reports have shown that boron may create borophene with hybrid structure mixing elements of honeycombed and triangular lattices. We have investigated growth of boron layer on SiC(0001) both with and without graphene capping layers. Interesting results have been obtained including decoupling of graphene buffer layer and conversion it into undoped free standing graphene. The dense boron layers on the other hand do exhibit similar formation of Dirac band structure and noticeable energy stability. The continuation of investigation of forming group III and IV overlayers on silicon nitride buffer layer started in 2019 have also showing promising results. In particular calculation shows possible tunable chiral edge states development on the stanene and plumbene nanoribbons formed on nitride. We are preparing the publication of our work summary to scientific journals.
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