Heavy group III, IV, and V elements triangular lattice atomic layers on semiconductor surfaces - a new kind of 2D Dirac materials

2020 Fiscal Year Final Research Report

• Project/Area Number: 18K04941
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Kyushu University
• Principal Investigator: Visikovskiy Anton 九州大学, 工学研究院, 助教 (70449487)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Keywords: Spin polarization / Dirac materials / 2D layer / semiconductors

Outline of Final Research Achievements

Dense triangular lattice 2D materials of group III, IV, and V of periodic table were not expected to be stable. However, our study has shown that owing to crucial substrate interaction (SiC substrate), this form is most stable compared to conventionally expected honeycomb lattice. The electron interaction in these materials have a very peculiar nature. We still have Dirac-like electronic dispersion, however, unlike in graphene, caused by in-plane orbitals. Spin-orbit interaction results in appearance of two types of spin polarized states. The phenomenon which has been not observed before and change our understanding of symmetry in electronic interactions. Though experiments have been performed on tin layers only, extensive calculations show very large class of materials behaving in similar manner, revealing the fundamental nature of phenomena. With proper material engineering technique, this can open a range of practical applications of these materials in novel spintronic devices.

Free Research Field

表面物理

Academic Significance and Societal Importance of the Research Achievements

新しいクラスの 2D マテリアルが見つかりました。 重要な学術的含意: 電子雲の対称性がさまざまなスピン相互作用をどのようにもたらすかについてのこれまでの理解は完全ではなく、別の考慮事項を考慮に入れる必要があることを示しました。

社会にとって、この結果は重要です。なぜなら、適切な材料生成技術を使えば、この現象を将来の高効率計算デバイスで使用できるからです。