Thermal stability improvement of diamond logic circuits for high-temperature application

2019 Fiscal Year Annual Research Report

• Project/Area Number: 18K13806
• Research Institution: National Institute for Materials Science
• Principal Investigator: 劉 江偉 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 独立研究者 (30732119)
• Project Period (FY): 2018-04-01 – 2020-03-31
• Keywords: diamond

Outline of Annual Research Achievements

During the past two fiscal years, thermal stabilities for hydrogenated diamond Ohmic contacts and MOSFETs have been improved. A long-term annealing process is performed for the Pd/H-diamond Ohmic contact with annealing temperature and time of 400 °C and 8 hours, respectively. A low specific contact resistivity and good thermal stability for the Pd/H-diamond are achieved. On the other hand, good operations for the H-diamond MOSFETs after annealing at 500 ºC are completed. The SiOx films are employed as oxide insulators for the H-diamond MOSFETs. Stable electrical characteristics are confirmed for the annealed SiOx/H-diamond MOSFET after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.

Research Products

• [Journal Article] Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors (2020)
  • Author(s): Liu Jiangwei、Teraji Tokuyuki、Da Bo、Ohsato Hirotaka、Koide Yasuo
  • Journal Title: IEEE Transactions on Electron Devices Volume: 67 Pages: 1680～1685
  • DOI: 10.1109/ted.2020.2972979
  • Peer Reviewed
• [Journal Article] Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond (2020)
  • Author(s): Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu , Junjun Wei, Bo Da, Chengming Li Yasuo Koide
  • Journal Title: AIP Advances Volume: 10 Pages: 1～5
  • Peer Reviewed / Open Access
• [Journal Article] High Current Output Hydrogenated Diamond Triple-Gate MOSFETs (2019)
  • Author(s): Liu Jiangwei、Ohsato Hirotaka、Da Bo、Koide Yasuo
  • Journal Title: IEEE Journal of the Electron Devices Society Volume: 7 Pages: 561～565
  • DOI: 10.1109/jeds.2019.2915250
  • Peer Reviewed
• [Journal Article] High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors (2019)
  • Author(s): Liu Jiangwei、Teraji Tokuyuki、Da Bo、Koide Yasuo
  • Journal Title: IEEE Electron Device Letters Volume: 40 Pages: 1748～1751
  • DOI: 10.1109/led.2019.2942967
  • Peer Reviewed
• [Journal Article] Recent progress in diamond-based MOSFETs (2019)
  • Author(s): Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin & Zhan-guo Wang
  • Journal Title: International Journal of Minerals, Metallurgy, and Materials Volume: 26 Pages: 1195～1205
  • Peer Reviewed / Int'l Joint Research
• [Presentation] Diamond Nano-/Micro-Fin Channels for Metal-Oxide-Semiconductor Field-Effect Transistors. (2020)
  • Author(s): LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo
  • Organizer: The 13th MANA International Symposium 2020 jointly with ICYS
  • Int'l Joint Research
• [Presentation] Development of boron-doped diamond metal-semiconductor field-effect transistors (2019)
  • Author(s): LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo
  • Organizer: 第33回ダイヤモンドシンポジウム
• [Presentation] High current output T-type and triple-gate hydrogenated diamond MOSFETs (2019)
  • Author(s): LIU, Jiangwei, KOIDE, Yasuo.
  • Organizer: 30th International Conference on Diamond and Carbon Materials
  • Int'l Joint Research
• [Presentation] Electrical properties of hydrogenated diamond MOSFETs after annealing at 500 °C (2019)
  • Author(s): LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, TERAJI, Tokuyuki, KOIDE, Yasuo
  • Organizer: 30th International Conference on Diamond and Carbon Materials
  • Int'l Joint Research
• [Presentation] Science/Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics (2019)
  • Author(s): Orlando Auciello, Elida de Obaldia, LIU, Jiangwei, KOIDE, Yasuo
  • Organizer: 7th International Symposium on Integrated Functionalities
  • Int'l Joint Research
• [Presentation] High current output T-type and triple-gate fin-type hydrogenated diamond MOSFETs (2019)
  • Author(s): LIU, Jiangwei
  • Organizer: 2019 International Symposium on Single Crystal Diamond and Electronics(SCDE 2019)
  • Int'l Joint Research / Invited
• [Remarks] Liu, Jiangwei
  • URL: https://samurai.nims.go.jp/profiles/liu_jiangwei?locale=ja