2019 Fiscal Year Annual Research Report
Thermal stability improvement of diamond logic circuits for high-temperature application
Project/Area Number |
18K13806
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Research Institution | National Institute for Materials Science |
Principal Investigator |
劉 江偉 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 独立研究者 (30732119)
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Project Period (FY) |
2018-04-01 – 2020-03-31
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Keywords | diamond |
Outline of Annual Research Achievements |
During the past two fiscal years, thermal stabilities for hydrogenated diamond Ohmic contacts and MOSFETs have been improved. A long-term annealing process is performed for the Pd/H-diamond Ohmic contact with annealing temperature and time of 400 °C and 8 hours, respectively. A low specific contact resistivity and good thermal stability for the Pd/H-diamond are achieved. On the other hand, good operations for the H-diamond MOSFETs after annealing at 500 ºC are completed. The SiOx films are employed as oxide insulators for the H-diamond MOSFETs. Stable electrical characteristics are confirmed for the annealed SiOx/H-diamond MOSFET after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.
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[Journal Article] Recent progress in diamond-based MOSFETs2019
Author(s)
Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin & Zhan-guo Wang
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Journal Title
International Journal of Minerals, Metallurgy, and Materials
Volume: 26
Pages: 1195~1205
Peer Reviewed / Int'l Joint Research
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