2019 Fiscal Year Annual Research Report
Development of novel ferromagnetic tunnel contacts for efficient Si spintronic devices
| Project/Area Number |
18K13807
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Aurelie Spiesser 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員 (90793513)
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| Project Period (FY) |
2018-04-01 – 2020-03-31
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| Keywords | oxide tunnel barrier / epitaxial growth / magnetoresistance ratio / coherent tunneling |
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| Outline of Annual Research Achievements |
I investigated the structural and magneto-transport properties of a Fe/SrO/MgO/Fe magnetic tunnel junctions (MTJs), in which SrO is a highly lattice-mismatched tunnel barrier. I demonstrated that a fully epitaxial structure having a high magnetoresistance ratio of 98% at 20 K can be achieved despite the large lattice mismatch between the SrO and both the Fe top electrode and the MgO underlying layer. I also found that the resistance-area product (RA) and the physical constants related to tunneling are comparable to that of epitaxial Fe/MgO/Fe MTJs. These results suggest that SrO(001) is an effective tunnel barrier in which coherent spin-polarized tunneling takes place.
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Research Products
(3 results)
