2021 Fiscal Year Annual Research Report
Selective growth of ultra-long grain in metal thin film for microelectronic application
| Project/Area Number |
18K14139
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| Research Institution | Shimane University |
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Principal Investigator |
Pham Hoang.Anh 島根大学, 学術研究院理工学系, 助教 (60750213)
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| Project Period (FY) |
2018-04-01 – 2022-03-31
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| Keywords | Thin film / Aluminum film / Gold film / Laser annealing / Selective growth / Single crystal |
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| Outline of Annual Research Achievements |
In this research project, we have successfully grown single-grain crystal stripes on thermal-evaporated Al thin films, and sputter-deposited Au thin films by using laser beam scanning. In the last 2 years, we have established the conditions necessary for the growth of single-grain crystal on Au thin film by laser beam scanning. The mechanism of single-grain crystal growth and its crystal orientation selection was elucidated. For single-grain crystal growth on metal thin films, the laser beam should be controlled to maintain a complete melt pool without excessive ablation. A SiO2 capping layer thicker than 400 nm is required to fulfill this requirement.
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