2021 Fiscal Year Final Research Report
Selective growth of ultra-long grain in metal thin film for microelectronic application
| Project/Area Number |
18K14139
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 30010:Crystal engineering-related
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| Research Institution | Shimane University |
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Principal Investigator |
Pham Hoang Anh 島根大学, 学術研究院理工学系, 助教 (60750213)
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| Project Period (FY) |
2018-04-01 – 2022-03-31
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| Keywords | Thin film / Single Crystal / Laser annealing / Metal film / Crystal orientation / Crystal growth / Microstructure control / Characterization |
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| Outline of Final Research Achievements |
In this research project, we have successfully grown single-grain crystal stripes on thermal-evaporated Al thin films, and sputter-deposited Au thin films by using laser beam scanning. We have established the conditions necessary for the growth of single-grain crystal on Au thin film by laser beam scanning. For single-grain crystal growth on metal thin films, the laser beam should be controlled to maintain a complete melt pool without excessive ablation. A SiO2 capping layer thicker than 400 nm is required. The mechanism of single-grain crystal growth and its crystal orientation selection was elucidated.
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| Free Research Field |
Thin film
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| Academic Significance and Societal Importance of the Research Achievements |
We have grown single-grain crystal line on Al and Au thin films. The laser parameters have been determine to control the crystal orientation of the crystals. The mechanism of crystal orientation selection has been clarified. The results have applications in microelectronic and plasmonic devices.
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