2011 Fiscal Year Final Research Report
InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
| Project/Area Number |
19002009
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| Research Category |
Grant-in-Aid for Specially Promoted Research
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
Engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ARAI Shigehisa 東京工業大学, 量子ナノエレクトロニクス研究センター, 教授 (30151137)
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| Co-Investigator(Kenkyū-buntansha) |
MARUYAMA Takeo 金沢大学, 電子情報学系, 准教授 (60345379)
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| Co-Investigator(Renkei-kenkyūsha) |
ASADA Masahiro 東京工業大学, 大学院・総合理工学研究科, 教授 (30167887)
MIYAMOTO Yasuyuki 東京工業大学, 大学院・理工学研究科, 准教授 (40209953)
NISHIYAMA Nobuhiko 東京工業大学, 大学院・理工学研究科 (80447531)
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| Project Period (FY) |
2007 – 2011
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| Keywords | インターコネクション / グローバル配線 / 半導体レーザ / トランジスタ / テラヘルツ / InP / 光電融合 |
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| Research Abstract |
We investigated InP-based membrane-type optical and electronic devices for broad band and low-power consumption optical interconnection in Si-LSI circuits since the RC delay time and the power consumption in metal wires will be bottleneck of high-speed operation and high functionality of LSIs in future. As the results, we successfully demonstrated current-injection-type membrane semiconductor lasers as well as photodetectors as low-power consumption optical devices, and also terahertz devices for inter-chip high-speed interconnection.
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[Journal Article] Lateral Current Injection Distributed Feedback Laser with Surface Grating Structure2011
Author(s)
T. Shindo, T. Okumura, H. Ito, T. Koguchi, D. Takahashi, Y. Atsumi, J. Kang, R. Osabe, T. Amemiya, N. Nishiyama, and S. Arai
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Journal Title
IEEE J. Sel. Top. Quantum Electron
Volume: vol.17, no.5
Pages: 1175-1182
Peer Reviewed
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