Development of High Power and Millimeter-long Wave Diamond Transistors Using Two Dimensional Hole Gas

2010 Fiscal Year Final Research Report

• Project/Area Number: 19106006
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Waseda University
• Principal Investigator: KAWARADA Hiroshi 早稲田大学, 理工学術院, 教授 (90161380)
• Co-Investigator(Kenkyū-buntansha): TACHIKI Minoru (独)物質材料研究機構 (50318838)
• Co-Investigator(Renkei-kenkyūsha): TAKANO Yoshihiko (独)物質材料研究機構 (10354341) ; YANG Jung-hoon 早稲田大学, 理工学術院 (80409680) ; IWASAKI Takayuki 早稲田大学, 理工学術院 (80454031)
• Project Period (FY): 2007 – 2010
• Keywords: 電子デバイス

Research Abstract

Metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated on diamond exhibiting high current, high frequency and high temperature performance. The maximum drain current density is above 1 A/mm and the highest transconductance is 400 mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The operation temperature of diamond MOSFETs increased to be 400℃ indicating the stable operation of diamond transistor. Josephson junction devices composed of superconducting diamonds show the junction characteristic frequency in THz region.

Research Products

• [Journal Article] Refractory two- dimensional hole gas on hydrogenated diamond surface (2012)
  • Author(s): A. Hiraiwa, A. Daicho, S. Kurihara, Y. Yokoyama, and H. Kawarada
  • Journal Title: J. Appl. Phys Volume: 112 Pages: 124504/1-6
  • Peer Reviewed
• [Journal Article] High Current MOSFETs on H-terminated Diamond Surfaces and Their High Frequency Operation (2012)
  • Author(s): H. Kawarada
  • Journal Title: Jpn. J. Appl. Phys Volume: 51 Pages: 090111/1-6
  • Peer Reviewed
• [Journal Article] Vertical SNS Weak-Link Josephson Junction Fabricated from Only Boron-Doped Diamond (2012)
  • Author(s): M. Watanabe, R. Nomura, R . Kanomata, S. Kurihara, A. Kawano, S. Kitagoh, T. Yamaguchi Y.Takano, H.Kawarada
  • Journal Title: Phys. Rev. B Volume: 85 Pages: 184516/1-5
  • Peer Reviewed
• [Journal Article] Growth and electrical characterization of δ-doped boron layers on (111) diamond surfaces (2012)
  • Author(s): R. Edgington, S. Sato, Y. Ishiyama, R. Morris, R. B. Jackman and H. Kawarada
  • Journal Title: J. Appl. Phys Volume: 111 Pages: 033710/1-7
  • Peer Reviewed
• [Journal Article] Boron δ-doped (111) diamond solution gate field effect transistors (2012)
  • Author(s): R. Edgington, A. R. Ruslinda, S. Sato, Y. Ishiyama, K. Tsuge, T. Ono, H. Kawarada, and R. B. Jackman
  • Journal Title: Biosensors and Bioelectronics Volume: 33 Pages: 152-157
  • Peer Reviewed
• [Journal Article] Diamond electrolyte solution gate FETs for DNA and protein sensors using DNA/RNA aptamers (2011)
  • Author(s): H. Kawarada and A. R. Ruslinda
  • Journal Title: Phys. Status. Solidi A Volume: 209 Pages: 9, 2005-2016
  • Peer Reviewed
• [Journal Article] Superconductor-to-insulator transition in boron-doped diamond (2010)
  • Author(s): A. Kawano, H. Ishiwata, S. Iriyama, R. Okada, T. Yamaguchi, Y. Takano, and H. Kawarada
  • Journal Title: Phys. Rev. B Volume: 81 Pages: 085318/1-8
  • Peer Reviewed
• [Journal Article] Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach (2010)
  • Author(s): Y. Jingu, K. Hirama, H. Kawarada
  • Journal Title: IEEE Trans. Electron Device Volume: 57 Pages: 966-972
  • Peer Reviewed
• [Journal Article] Aptamer-based biosensor for sensitive PDGF detection using diamond transistor (2010)
  • Author(s): A. Rahim Ruslinda, S. Tajima, Y. Ishi, Y. Ishiyama, R. Edgington, H. Kawarada
  • Journal Title: Biosensors and Bioelectronics Volume: 26 Pages: 1599-1604
  • Peer Reviewed
• [Journal Article] High-performance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface (2010)
  • Author(s): K. Hirama, K. Tsuge, S. Sato, T. Tsuno, Y. Jingu, S. Yamauchi, H. Kawarada
  • Journal Title: Appl. Phys. Express Volume: 3 Pages: 044001/1-3
  • Peer Reviewed
• [Journal Article] Schottky barrier heights, carrier density, and negative electron affinity of hydrogen- terminated diamond (2010)
  • Author(s): K.Tsugawa, H.Noda, K.Hirose, H.Kawarada
  • Journal Title: Phys. Rev. B Volume: 81 Pages: 045303/1-11
  • Peer Reviewed
• [Journal Article] Soft X-ray core-level photoemission study of boron sites in heavily boron-doped diamond films source (2009)
  • Author(s): H. Okazaki, R. Yoshida, T. Muro, T. Wakita, M. Hirai, Y.Muraoka, Y. Takano, S. Iriyama, H. Kawarada, T. Oguchi, T. Yokoya
  • Journal Title: J. Phys.Soc.Jpn Volume: 78 Pages: 034703
  • Peer Reviewed
• [Journal Article] Temperature-dependent localized excitations of doped carriers in superconducting diamond (2008)
  • Author(s): K. Ishizaka, R. Eguchi, S. Tsuda, A. Chainani, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C.-T. Chen, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin
  • Journal Title: Phys. Rev. Lett Volume: 100 Pages: 166402/1-3
  • Peer Reviewed
• [Journal Article] Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET (2008)
  • Author(s): S. Kuga, S. Tajima, J.H. Yang, K. Hirama, H. Kawarada
  • Journal Title: IEEE IEDM 2008 (International Electron Devices Meeting) Pages: 483-486
  • Peer Reviewed
• [Journal Article] Holes in the valence band of superconducting boron-doped diamond film studied by soft X-ray absorption and emission spectroscopy (2008)
  • Author(s): J. Nakamura, N. Yamada, K. Kuroki, T.Oguchi, K. Okada, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, R.C. C. Perera, D. L. Ederer
  • Journal Title: J. Phys. Soc. Jpn Volume: 77 Pages: 054711/1-6
  • Peer Reviewed
• [Journal Article] Detection of mismatched DNA on partially negatively charged diamond surface by optical and potentiometric methods (2008)
  • Author(s): S. Kuga, J. H. Yang H. Takahashi, K. Hirama, T. Iwasaki, H. Kawarada
  • Journal Title: J. Am. Chem. Soc Volume: 130 Pages: 13251-13263
  • Peer Reviewed
• [Journal Article] Characterization of hybridization on diamond solution-gate field-effect transistors for detecting single mismatched oligonucleotides (2008)
  • Author(s): J. H. Yang, S. Kuga, K. S. Song, H. Kawarada
  • Journal Title: Appl. Phys. Express Volume: 1 Pages: 11801/1-3
  • Peer Reviewed
• [Journal Article] Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance (2008)
  • Author(s): K. Hirama, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Umezawa, H. Kawarada
  • Journal Title: Appl. Phys. Lett Volume: 92 Pages: 11, 112107/1-3
  • Peer Reviewed
• [Journal Article] Low-temperature STM/STS studies on boron-doped (111) diamond films (2008)
  • Author(s): T. Nishizaki, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, N. Kobayashi
  • Journal Title: J. Phy. Chem. Solids Volume: 69 Pages: 3027-3030
  • Peer Reviewed
• [Journal Article] High-performance p-channel diamond MOSFETs with alumina gate insulator (2007)
  • Author(s): K. Hirama, H. Takayanagi, S. Yamauchi, Y. Jingu, H. Umezawa, H. Kawarada
  • Journal Title: 2007 IEEE IEDM (International Electron Devices Meeting) Pages: 873-876
  • Peer Reviewed
• [Presentation] Heavily boron-doped diamond and its application to electron devices in harsh environment (2012)
  • Author(s): H.Kawarada
  • Organizer: International Conference on New Diamond & Nano Carbons (NDNC 2012)
  • Place of Presentation: Puerto Rico, USA (invited)
  • Year and Date: 20120520-24
• [Presentation] Superconducting diamond is still in progress (2011)
  • Author(s): H. Kawarada
  • Organizer: 22nd European Conference on Diamond,Garmisch- Partenkirchen
  • Place of Presentation: Germany (invited)
  • Year and Date: 20110903-07
• [Presentation] Mechanism of DNA and RNA sensing by diamond surface channel device (2008)
  • Author(s): H. Kawarada
  • Organizer: International Symposium on Surface Science and Nanotechnology
  • Place of Presentation: Japan (invited)
  • Year and Date: 20081109-13
• [Presentation] On the mechanism of DNA and RNA precise sensing using diamond devices (2008)
  • Author(s): H. Kawarada
  • Organizer: 2nd conference on New Diamond & Nano Carbons
  • Place of Presentation: Taipei, Taiwan (plenary)
  • Year and Date: 20080525-30
• [Book] 「知識ベース」 S2群2編 ダイヤモンドデバイス (電子情報通信学会 2010) (2010)
  • Author(s): 川原田 洋
  • Publisher: 電子情報通信学会
• [Book] 4.1.3 Diamond, 2007 in Wide Bandgap Semiconductors, edited by K.Takahashi, A.Yoshikawa, A.Sandhu (2007)
  • Author(s): H. Kawarada
  • Total Pages: 243-248
  • Publisher: Springer
• [Remarks] 川原田 洋 第11回超伝導科学技術賞(未踏科学技術協会) 2007年
• [Remarks] (1)日経産業新聞 2012年10月3日「人工ダイヤ使い400℃耐熱トランジスタ」
• [Remarks] (2)半導体産業新聞 2012年1月25日号p.10 「究極の半導体」を目指して「世界最高性能のダイヤモンドFET開発」
• [Remarks] (3)電子ジャーナル 2011年8月号p.90-91 超低損失電力トランジスタの研究開発
• [Remarks] (4)日経産業新聞 2008年4月2日「新センサで安価に検出、ダイヤモンドFETセンサ」
• [Remarks] (5)日刊工業新聞 2008年12月17日 「ダイヤモンドの電界効果トランジスタを利用、DNAやRNAの一塩基多型検出に成功」
• [Remarks]
  • URL: http://www.kawarada-lab.com/
• [Patent(Industrial Property Rights)] 電力素子、電力制御機器、電力素子の製造方法 (2012)
  • Inventor(s): 川原田 洋、 平岩 篤
  • Industrial Property Rights Holder: 早稲田大学
  • Industrial Property Number: 2012-185180
  • Filing Date: 2012-08-24
• [Patent(Industrial Property Rights)] ジョセフソン素子 (2009)
  • Inventor(s): 川原田 洋、高野義彦 他
  • Industrial Property Rights Holder: 早稲田大学、(独)物質材料研究機構
  • Industrial Property Number: 2009-204864
  • Filing Date: 2009-09-04
• [Patent(Industrial Property Rights)] ダイヤモンド薄膜およびダイヤモンド電界効果トランジスタ (2009)
  • Inventor(s): 川原田 洋、嘉数 誠 他
  • Industrial Property Rights Holder: 早稲田大学、NTT物性科学研究所
  • Industrial Property Number: 2009-17305
  • Filing Date: 2009-07-24