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2011 Fiscal Year Final Research Report

Study of optical micro systems by monolithic integration of silicon with nitride semiconductor

Research Project

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Project/Area Number 19106007
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionTohoku University

Principal Investigator

HANE Kazuhiro  東北大学, 大学院・工学研究科, 教授 (50164893)

Co-Investigator(Kenkyū-buntansha) HU Fangren  東北大学, 大学院・工学研究科, 助教 (50396545)
Co-Investigator(Renkei-kenkyūsha) KANAMORI Yoshiaki  東北大学, 大学院・工学研究科, 准教授 (10333858)
SASAKI Minoru  豊田工業大学, 工学部, 教授 (70282100)
Project Period (FY) 2007 – 2011
Keywords光デバイス / 集積化 / MEMS
Research Abstract

Integrating GaN light source devices with Si three-dimensional structures and micro actuators monolithically, functional micro-electro-mechanical systems (MEMS)for optical applications were developed. Crystal growth of GaN-LED on Si substrate, GaN crystal growth on micro-machined GaN/Si substrate, integration of GaN-LED with Si actuator, and fabrication of GaN actuator were carried out. Integrating GaN-LED with Si-MEMS, a variable lightning device, a micro fluorescent analysis chip etc. were demonstrated.

  • Research Products

    (35 results)

All 2012 2011 2010 2009 2008 2007 Other

All Journal Article (23 results) (of which Peer Reviewed: 23 results) Presentation (10 results) Book (1 results) Remarks (1 results)

  • [Journal Article] Design and fabrication of GaN crystal ultra-small lateral comb-drive actuators2012

    • Author(s)
      T. Tanae, H. Sameshima, K. Hane
    • Journal Title

      J. Vac. Sci. Technol

      Volume: B30(1) Pages: 012001-1-7

    • Peer Reviewed
  • [Journal Article] III-nitride grating grown on freestanding HfO2 gratings2011

    • Author(s)
      Y. Wang, T. Wu, F. Hu, Y. Kanamori, H. Zhu, K. Hane
    • Journal Title

      Nano.Res. Lett.

      Volume: 6(1) Pages: 497(5pp)

    • Peer Reviewed
  • [Journal Article] Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy2011

    • Author(s)
      Y. Wang, F. Hu, K. Hane
    • Journal Title

      Semicond. Sci. Technol

      Volume: 26(4) Pages: 045015(6pp)

    • Peer Reviewed
  • [Journal Article] The resonant III-nitride grating reflector2011

    • Author(s)
      Y. Wang, T. Wu, T. Tanae, H. Zhu, K. Hane
    • Journal Title

      J. Micromech. Microeng

      Volume: 21(10) Pages: 105025(6pp)

    • Peer Reviewed
  • [Journal Article] Comb-drive GaN micro-mirror on a GaN-on-silicon platform2011

    • Author(s)
      Y. Wang, T. Sasaki, T. Wu, F. Hu, K. Hane
    • Journal Title

      J. Micromech. Microeng

      Volume: 21(3) Pages: 035012(5pp)

    • Peer Reviewed
  • [Journal Article] A GaN Electromechanical Tunable Grating on Si Substrate2011

    • Author(s)
      H. Sameshima, T. Tanae, K. Hane
    • Journal Title

      IEEE Photon. Technol. Lett

      Volume: 23(5) Pages: 281-283

    • Peer Reviewed
  • [Journal Article] Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications2011

    • Author(s)
      M. Wakui, H. Sameshima, F. Hu, K. Hane
    • Journal Title

      Microsys. Technol

      Volume: 17(1) Pages: 109-114

    • Peer Reviewed
  • [Journal Article] Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy2011

    • Author(s)
      Y. Wang, F. Hu, K. Hane
    • Journal Title

      Nano.Res. Lett.

      Volume: 6(1) Pages: 117(7pp)

    • Peer Reviewed
  • [Journal Article] III-nitride grating grown on freestanding HfO_2 gratings2011

    • Author(s)
      Y. Wang, T. Wu, F. Hu, Y. Kanamori, H. Zhu, K. Hane
    • Journal Title

      Nano.Res. Lett

      Volume: 6(1) Pages: 497(5pp)

    • Peer Reviewed
  • [Journal Article] Monolithic-fabrication of Si micro-electro-mechanical structure with GaN ligth emitting diode2010

    • Author(s)
      R. Ito, M. Wakui, H. Sameshima, F. Hu, K. Hane
    • Journal Title

      Microsystem Technologies

      Volume: 16(6) Pages: 1015-1020

    • Peer Reviewed
  • [Journal Article] Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure2010

    • Author(s)
      Y. Wang, F. Hu, Y. Kanamori, T. Wu, K. Hane
    • Journal Title

      Optics Express

      Volume: 18(6) Pages: 5504-5511

    • Peer Reviewed
  • [Journal Article] Fabrication and characterization of sub wavelength nanostructures on freestanding GaN slab2010

    • Author(s)
      Y. Wang, F. Hu, Y. Kanamori, H. Sameshima, K. Hane
    • Journal Title

      Optics Express

      Volume: 18(3) Pages: 2940-2945

    • Peer Reviewed
  • [Journal Article] Freestanding GaN slab fabricated on patterned silicon on an insulator substrate2010

    • Author(s)
      Y. Wang, F. Hu, K. Hane
    • Journal Title

      Journal of Micromechanics and Microengineering

      Volume: 20(2) Pages: 027001(5pp)

    • Peer Reviewed
  • [Journal Article] Growth of GaN LED Structure on Si Substrate by ME and Monolithic Fabrication of GaN LED Cooling System2010

    • Author(s)
      M. Wakui, F. Hu, H. Sameshima, K. Hane
    • Journal Title

      IEEJ Transactions on Electrical and Electronic Engineering

      Volume: 5(2) Pages: 171-174

    • Peer Reviewed
  • [Journal Article] Fabrication and characterization of freestanding circular GaN grating2010

    • Author(s)
      Y. Wang, F. Hu, H. Sameshima, K. Hane
    • Journal Title

      Optics Express

      Volume: 18(2) Pages: 773-779

    • Peer Reviewed
  • [Journal Article] Freestanding GaN resonat gratings at telecommunication range2009

    • Author(s)
      Y. Wang, F. Hu, M. Wakui, K. Hane
    • Journal Title

      IEEE Photonics Technology Letters

      Volume: 21(17) Pages: 1184-1186

    • Peer Reviewed
  • [Journal Article] MBE Fabrication of GaN-Based Light Emitting Diode on MOCVD Grown GaN-on-Si Template and Application for Optical MEMS2009

    • Author(s)
      M. Wakui, R. Ito, F. Hu, H. Sameshima, K. Hane
    • Journal Title

      電気学会論文誌E

      Volume: 129(3) Pages: 77-80

    • Peer Reviewed
  • [Journal Article] GaN-based nitride semiconductor films deposited on nitrified HfO_2/Si substrate by molecular beam epitaxy2009

    • Author(s)
      F. Hu, H. Samashima, M. Wakui, R. Ito, K. Hane
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2996-2999

    • Peer Reviewed
  • [Journal Article] A Freestanding GaN/HfO2 Membrane Grown by Molecular Beam Epitaxy for GaN-Si Hybrid MEMS2009

    • Author(s)
      H. Sameshima, M. Wakui, F. Hu, K. Hane
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics

      Volume: 15(5) Pages: 1332-1337

    • Peer Reviewed
  • [Journal Article] GaN-Si-MEMS structure fabricated from nano-column GaN quantum well crystal grown on Si substrate2008

    • Author(s)
      F. Hu, R. Ito, Y. Zhao, K. Hane
    • Journal Title

      physica status solidi (C)

      Volume: 5(6) Pages: 1941-1943

    • Peer Reviewed
  • [Journal Article] A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111)substrate and its micromachining2007

    • Author(s)
      F. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, K. Hane
    • Journal Title

      Nanotechnology

      Volume: 19(3) Pages: 035305(6pp)

    • Peer Reviewed
  • [Journal Article] Nanocolumn InGaN/GaN quantum-well crystals on flat anf pillared Si substrates with nitrified Ga as a buffer layer2007

    • Author(s)
      F. Hu, K. Ochi, Y. Zhao, K. Hane
    • Journal Title

      Nanotechnology

      Volume: 18(27) Pages: 275605(6pp)

    • Peer Reviewed
  • [Journal Article] InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer2007

    • Author(s)
      F. Hu, K. Ochi, Y. Zhao, K. Hane
    • Journal Title

      phys. stat. sol.

      Volume: 4(7) Pages: 2338-2341

    • Peer Reviewed
  • [Presentation] Integrated Fluorescent Analysis System with Monolithic GaN Light Emitting Diode on Si Platform2012

    • Author(s)
      H. Nakazato, H. Kawaguchi, A. Iwabuchi, K. Hane
    • Organizer
      IEEE MEMS 2012
    • Place of Presentation
      Paris, France
    • Year and Date
      2012-01-30
  • [Presentation] Integration of MEMS actuators with nanophotonics : silicon submicron-wide waveguides for optical path changes2011

    • Author(s)
      K. Hane and Y. Kanamori
    • Organizer
      The16th Opt-Electron. Communi. Conf.(OECC2911)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2011-07-07
  • [Presentation] Silicon submicron waveguide and MEMS tunable optical telecommunication devices2011

    • Author(s)
      K. Hane and Y. Kanamori
    • Organizer
      Int. Conf. Micro/Nano Opt. Eng.(ICOME2011)
    • Place of Presentation
      Changchun, China
    • Year and Date
      2011-06-13
  • [Presentation] GaN comb-drive actuators on Si substrate2011

    • Author(s)
      T. Tanae, H. Sameshima, K. Hane
    • Organizer
      The 16th Int. Conf. Solid-State Sensors, Actuators and Microsystems, M3P
    • Place of Presentation
      Beijing, China
    • Year and Date
      2011-06-03
  • [Presentation] Comb-drive III-nitride micro mirror fabricated by fast atom beam etching2011

    • Author(s)
      Y. Wang, T. Sasaki, T. Wu, F. Hu, K. Hane
    • Organizer
      The 16th Int. Conf. Solid-State Sensors, Actuators and Microsystems, M3P
    • Place of Presentation
      Beijing, China
    • Year and Date
      2011-06-03
  • [Presentation] Nanoscale epitaxial growth of GaN on freestanding circular GaN graitng2010

    • Author(s)
      Y. Wang, F. Hu, K. Hane
    • Organizer
      Proc. Optical MEMS and Nanophotonics
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2010-08-11
  • [Presentation] GaN pitch-variable grating fabricated on Si substrate2010

    • Author(s)
      H. Sameshima, T. Tanae, K. Hane
    • Organizer
      Proc. Optical MEMS and Nanophotonics
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2010-08-10
  • [Presentation] GaN-LED grown on Si substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device2009

    • Author(s)
      M. Wakui, R. Ito, H. Sameshima, F. Hu, K. Hane
    • Organizer
      The 15th Int. Conf. Solid-State Sensors, Actuators and Microsystems
    • Place of Presentation
      Denver, U. S. A
    • Year and Date
      2009-06-23
  • [Presentation] Monolithically integration of GaN light-emitting diode and Si substrate with AlN/GaN superlattice and interlayer2009

    • Author(s)
      F. Hu, M. Wakui, H. Sameshima, R. Ito, K. Hane
    • Organizer
      2009 JSME-IIP/ASME-ISPS Joint Conf. Micromechatronics for Information and Precision Equipment
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2009-06-20
  • [Presentation] Monolithic fabrication of GaN LEDs on Si wafer and GaN membrane structure for cooling system2008

    • Author(s)
      M. Wakui, F. Hu, H. Sameshima, K. Hane
    • Organizer
      Proc. Power MEMS 2008+ microEMS2008
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2008-11-10
  • [Book] Comprehensive Microsystems2008

    • Author(s)
      K. Hane, M. Sasaki
    • Total Pages
      1-63
    • Publisher
      Elsevier
  • [Remarks]

    • URL

      http://www.hane.mech.tohoku.ac.jp

URL: 

Published: 2013-07-31  

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