2010 Fiscal Year Final Research Report
Control of deep ultraviolet light emission properties of hexagonal boron nitride crystals
| Project/Area Number |
19205026
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TANIGUCHI Takashi National Institute for Materials Science, ナノスケール物質萌芽ラボ, グループリーダー (80354413)
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| Co-Investigator(Kenkyū-buntansha) |
WATANBE Kenji 独立行政法人物質・材料研究機構, 光材料センター, 主幹研究員 (20343840)
KOIZUMI Satoshi 独立行政法人物質・材料研究機構, センサ材料センター, 主幹研究員 (90215153)
KOBAYASHI Kazuaki 独立行政法人物質・材料研究機構, 計算科学センター, 主幹研究員 (00354150)
OBA Fumiyasu 京都大学, 工学研究科, 准教授 (90378795)
YAMADA Takatoshi 独立行政法人産業技術総合研究所, ナノチューブ応用研究センター, 研究員 (30306500)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 遠紫外線発光 / 六方晶窒化ホウ素 / 自由励起子発光 / 高圧結晶合成 |
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| Research Abstract |
The purpose of this study is to realize the potential of hexagonal boron nitride(hBN) crystal as a deep ultraviolet light emission materials. High purity single crystals of hBN were obtained under high pressure flux growth process and their optical properties were characterized. Synthesis technique of high purity hBN under atmospheric pressure was also established by using Ni base solvent system. The plot-type of deep ultraviolet emission device combined with hBN crystals and electron emitter were fabricated and its usefulness for sterilization of bacteria was realized.
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