Novel delta doping technology with two or more dopants in silicon towards quantum information processing platform

2009 Fiscal Year Self-evaluation Report

• Project/Area Number: 19206003
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: MIKI Kazushi National Institute for Materials Science, ナノ有機センター, グループリーダー (30354335)
• Project Period (FY): 2007 – 2010
• Keywords: 結晶工学 / 結晶成長 / 半導体物性 / 量子コンピュータ / MBE・エピタキシャル

Research Abstract

今日の社会では情報通信の革新のために、交通制御などを扱うような複雑な問題を処理する情報技術や、個人情報が完全に保護する通信技術が必要とされており、このような情報処理通信技術の実現には量子情報科学の活用が不可欠である。量子情報技術では量子ビットと呼ばれる情報の担い手になる物理系が必要となる。本研究は、この物理系として異種原子を5-10nmの間隔で隣接配置した構造をエピタキシャル成長技術で実現するものである。

Research Products

• [Journal Article] Site-specific evolution of surface stress during the room temperature oxidation of the Si(111)-(7 x7) (2010)
  • Author(s): N. T. Kinahan, D. E. Meehan, T. Narushima, S. Sachert, J. J. Boland, K. Miki
  • Journal Title: surface, Physical Review Letters 103 Pages: 146101
  • Peer Reviewed
• [Journal Article] Electronic structure of Bi lines on clean and H-passivated Si(100) (2010)
  • Author(s): J Javorsky, J. H. G. Owen, M Setvin, K Miki
  • Journal Title: Journal of Physics : Condensed Matter 22 Pages: 175006
  • Peer Reviewed
• [Journal Article] Electronic structure of the Si(110)-(16x2) surface : High-resolution ARPES and STM investigation (2009)
  • Author(s): Kazuyuki Sakamoto, Martin Setvin, Kenji Mawatari, P. E. J. Eriksson, Kazushi Miki, R. I. G. Uhrberg
  • Journal Title: Physical Review B79 Pages: 045304
  • Peer Reviewed
• [Journal Article] Alignment induced epitaxial transition in organic-organic heteroepitaxy (2008)
  • Author(s): Dong Guo, K. Sakamoto, K. Miki, S. Ikeda, K. Saiki
  • Journal Title: Physical Review Letters 101 Pages: 236103
  • Peer Reviewed
• [Journal Article] Defective Continuous Hydrogen-Bond Networks : An Alternative Interpretation of IR Spectroscopy (2008)
  • Author(s): Diedrich A. Schmidt, Kazushi Miki
  • Journal Title: ChemPhysChem 9 Pages: 1914-1919
  • Peer Reviewed
• [Journal Article] A scanning tunnelling microscopy investigation into the initial stages of copper phthalocyanine growth on passivated silicon surfaces (2008)
  • Author(s): J. Gardener, J. H. G. Owen, K. Miki, S. Heutz
  • Journal Title: Surface Science 18 Pages: 1173-1177
  • Peer Reviewed
• [Journal Article] Fabrication of a memory chip by a complete self-assembly process using state-of-the-art multilevel cell (MLC) technology (2008)
  • Author(s): A. Bandyopadhyay, K. Miki
  • Journal Title: Advanced Functional Materials 18 Pages: 1173-1177
  • Peer Reviewed
• [Journal Article] Electronic and transport properties of bismuth nanolines for applications in molecular electronics (2007)
  • Author(s): R. V. Belosludov, A. A. Farajian, H. Mizuseki, K. Miki, Y. Kawazoe
  • Journal Title: Physical Review B75 Pages: 113411
  • Peer Reviewed
• [Presentation] シリコン点欠陥 (G-center) 由来の狭帯域エレクトロルミネセンスとその温度依存性 (2010)
  • Author(s): 安武裕輔, 大村史倫, 田名網宣成, 村田晃一, 三木一司, 深津晋
  • Organizer: 2010年春季第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-19
• [Presentation] Spatially resolved STS on Si(110)-16×2 (2009)
  • Author(s): Martin Setvin, Kazuyuki Sakamoto, Kazushi Miki
  • Organizer: 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10)
  • Place of Presentation: Granada, Spain
  • Year and Date: 2009-09-22
• [Presentation] Electronic structure of Bi lines on clean and H-passivated Si(100) (2009)
  • Author(s): J.Javorsky, Kazushi Miki, James Owen, David Bowler
  • Organizer: 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10)
  • Place of Presentation: Granada, Spain
  • Year and Date: 2009-09-22
• [Presentation] Novel delta doping technology with two dopants in silicon towards quantum information processing platform (2009)
  • Author(s): Kazushi Miki
  • Organizer: JSPS (Japan Society of Promotion of Science) & RFBR (Russian Foundation of Basic Science) Joint Laboratory of interdisciplinary research SB RAS (Siberian Branch of Russian Academy of Sciences) and Tohoku University : Russian-Japanese workshop (review conference) "State of materials research and new trends in material science"
  • Place of Presentation: Novosibirsk
  • Year and Date: 2009-08-03
• [Presentation] Photoemission and scanning tunneling microscopy studies on the Si(110)-(16×2) surface (2009)
  • Author(s): Kazushi Miki, Kazuyuki Sakamoto, Martin Setvin, Kenji Mawatari, P.E.J.Eriksson, R.I.G.Uhrberg
  • Organizer: The Symposium on Surface and Nano Science 2009 (SSNS'09)
  • Place of Presentation: Shizukuishi
  • Year and Date: 2009-01-17
• [Presentation] Novel delta doping process of two or more elements in Si : usage with a surface atomic nanoline as a starting material (2008)
  • Author(s): 三木一司
  • Organizer: SYMPOSIUM ON SURFACE SCIENCE 2008
  • Place of Presentation: St. Christoph am Arlberg, Austria
  • Year and Date: 2008-03-03
• [Patent(Industrial Property Rights)] 半導体とその製造方法 (SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME) (2007)
  • Inventor(s): 三木一司, 八木修平, 日塔光一, 坂本邦博
  • Industrial Property Rights Holder: 物質・材料研究機構、産業技術総合研究所
  • Industrial Property Number: 特許特願2008-530980 (PCT/JP2007/066584からの移行)
  • Filing Date: 2007-08-27
• [Patent(Industrial Property Rights)] 半導体とその製造方法 (SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME) (2007)
  • Inventor(s): 三木一司, 八木修平, 日塔光一, 坂本邦博
  • Industrial Property Rights Holder: 物質・材料研究機構
  • Industrial Property Number: 特許英国出願番号0905200.2 (PCT/JP2007/066584からの移行)
  • Filing Date: 2007-08-27
  • Overseas
• [Patent(Industrial Property Rights)] 半導体とその製造方法 (SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME) (2007)
  • Inventor(s): 三木一司, 八木修平, 日塔光一, 坂本邦博
  • Industrial Property Rights Holder: 物質・材料研究機構
  • Industrial Property Number: 特許米国出願番号12/310,396 (PCT/JP2007/066584からの移行)
  • Filing Date: 2007-08-27
  • Overseas