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2010 Fiscal Year Final Research Report

Novel delta doping technology with two or more dopants in silicon towards quantum information processing platform

Research Project

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Project/Area Number 19206003
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionNational Institute for Materials Science

Principal Investigator

MIKI Kazushi  National Institute for Materials Science, ナノ有機センター, グループリーダー (30354335)

Co-Investigator(Kenkyū-buntansha) NITTO Ko'ichi  独立行政法人物質・材料研究機構, ナノ有機センター, 研究業務員 (20421414)
SAKAMOTO Kunihiro  独立行政法人産業技術総合研究所, エレクトロニクス研究部門, 主幹研究員 (50357109)
KAWABATA Shiro  独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (30356852)
FUKATSU Susumu  東京大学, 大学院・総合文化研究科, 教授 (60199164)
Project Period (FY) 2007 – 2010
Keywords結晶工学 / 結晶成長 / 半導体物性 / 量子コンピュータ / MBE・エピタキシャル
Research Abstract

A new technology that forms a δ layer with various elements dopants in the silicon, by combining two methods to dope elements with usage of characteristic surface structures and to move the doping atoms into substitutional sites to activate them by using a short laser annealing, was advocated. It was demonstrated that by choosing the bismuth atomic nanolines on the Si(001) surface as doping source, Bi atoms in the nanoline was partially changed into Er atoms, and both elements was doped into a δ layer in silicon crystal. Hybrid laser annealing, i.e., a serial combination of laser exposure and furnace annealing, is demonstrated to activate Bi donors that are δ-doped in Si. The photoluminescence reveals that the dense Bi atoms are activated so efficiently that an impurity band develops upon rapid radiation heating of the focused area close to the melting point of Si. The unintentional defects that are created thereby can be totally eliminated by subsequent furnace annealing at 390℃. The unintentional defects were characterized to be the G-centers and they get a lot of attention due to new photonic material for laser application. We propose a new method of creating G-centers in a surface region with highly dense carbon atoms of up to 4×10^<19>cm^<-3>, above the solubility limit of carbon atoms in silicon crystal.

  • Research Products

    (32 results)

All 2011 2010 2009 2008 2007

All Journal Article (19 results) (of which Peer Reviewed: 19 results) Presentation (9 results) Book (1 results) Patent(Industrial Property Rights) (3 results)

  • [Journal Article] High-density G-centers, light-emitting point defects in silicon Crystal.2011

    • Author(s)
      Koichi Murata, Yuhsuke Yasutake, Koh-ichi Nittoh, Susumu Fukatsu, Kazushi Miki
    • Journal Title

      AIP Advanced 1

      Pages: 032125

    • Peer Reviewed
  • [Journal Article] Manganese silicide nanowires on Si(001).2011

    • Author(s)
      H.J. Liu, J.H.G.Owen, K.Miki, Ch.Renner
    • Journal Title

      J.Phys.Cond.Matter. 23

      Pages: 172001

    • Peer Reviewed
  • [Journal Article] Trimeri c precursors in formation of Al magic clust ers on a Si(111)-7x7 surface.2011

    • Author(s)
      Hongjun Liu, Jyh-Pin Choud, Run-Wei Li, Ching-Ming Wei, Kazushi Miki
    • Journal Title

      Phys.Rev.B 83

      Pages: 075405

    • Peer Reviewed
  • [Journal Article] Auger recombination in Si1-xGex/Si quantum wells under high-density photoexcitation2011

    • Author(s)
      T.Tayagaki, S.Fukatsu, Y.Kanemistu
    • Journal Title

      Phys.Status Solidi C 8,No.3

      Pages: 1049-105

    • Peer Reviewed
  • [Journal Article] Atomic scale 0-π transition in a high-Tc superc onductor/ferromagnetic-insulator/high-Tc superc onductor Josephson junction2011

    • Author(s)
      S.Kawabata, Y.Tanaka, Y.Asano
    • Journal Title

      Physica E 43

      Pages: 722-725

    • Peer Reviewed
  • [Journal Article] Bowler Step structure of Si(110)-(16×2) and adsorption of H_2O.2010

    • Author(s)
      Martin Setvin, Veronika Brazdova, Kazushi Miki, David R.
    • Journal Title

      Physical Review B 82

      Pages: 125421

    • Peer Reviewed
  • [Journal Article] Initial adsorption of C_<60> molecules on Si(111)-7x7 surface with Al nanocluster array.2010

    • Author(s)
      Hongjun Li, Run-Wei Li, Kazushi Miki.
    • Journal Title

      e-Journal of Surface Science and Nanotechnology 8

      Pages: 354-357

    • Peer Reviewed
  • [Journal Article] Hybrid laser activation of highly concentrated Bi donors in wire-δ-doped silicon.2010

    • Author(s)
      Koichi Murata, Yuhsuke Yasutake, Koh-ichi Nittoh, Kunihiro Sakamoto, Susumu Fukatsu, Kazushi Miki
    • Journal Title

      Applied Physics Express. 3

      Pages: 061302

    • Peer Reviewed
  • [Journal Article] Site-specific evolution of surface stress during the room temperature oxidation of the Si(111)-(7 x7) surface2010

    • Author(s)
      N.T.Kinahan, D.E.Meehan, T.Narushima, S.Sachert, J.J.Boland, K.Miki
    • Journal Title

      Physical Review Letters 103

      Pages: 146101

    • Peer Reviewed
  • [Journal Article] Electronic structure of Bi lines on clean and H-passivated Si(100)2010

    • Author(s)
      J Javorsky, J.H.G.Owen, M Setvin, K Miki
    • Journal Title

      Journal of Physics : Condensed Matter 22

      Pages: 175006

    • Peer Reviewed
  • [Journal Article] Control of Auger Recombination Rate in Si1?xGex/Si Heterostructures2010

    • Author(s)
      T.Tayagaki, S.Fukatsu, Y.Kanemistu
    • Journal Title

      J.Phys.Soc.Jpn. 79

      Pages: 013701-1-4

    • Peer Reviewed
  • [Journal Article] Thermally induced 0-π phase transition in Josephson junctions through a ferromagnetic oxide film2010

    • Author(s)
      S.Kawabata, Y.Asano, Y.Tanaka, A.A.Golubov, S.Kashiwaya
    • Journal Title

      Physica C 470

      Pages: 1496-1498

    • Peer Reviewed
  • [Journal Article] Dissipative current in SIFS Josephson junctions2010

    • Author(s)
      A.S.Vasenko, S.Kawabata, A.A.Golubov, F.W.J.Hekking
    • Journal Title

      Physica C 470

      Pages: 863-866

    • Peer Reviewed
  • [Journal Article] Electronic structure of the Si(110)-(16x2) surface : High-resolution ARPES and STM investigation2009

    • Author(s)
      Kazuyuki Sakamoto, Martin Setvin, Kenji Mawatari, P.E.J.Eriksson, Kazushi Miki, R.I.G.Uhrberg
    • Journal Title

      Physical Review B 79

      Pages: 045304

    • Peer Reviewed
  • [Journal Article] Alignment induced epitaxial transition in organic-organic heteroepitaxy2008

    • Author(s)
      Dong Guo, K.Sakamoto, K.Miki, S.Ikeda, K.Saiki
    • Journal Title

      Physical Review Letters 101

      Pages: 236103

    • Peer Reviewed
  • [Journal Article] Defective Continuous Hydrogen-Bond Networks : An Alternative Interpretation of IR Spectroscopy2008

    • Author(s)
      Diedrich A.Schmidt, Kazushi Miki
    • Journal Title

      ChemPhysChem 9

      Pages: 1914-1919

    • Peer Reviewed
  • [Journal Article] A scanning tunnelling microscopy investigation into the initial stages of copper phthalocyanine growth on passivated silicon surfaces2008

    • Author(s)
      J.Gardener, J.H.G.Owen, K.Miki, S.Heutz
    • Journal Title

      Surface Science 18

      Pages: 1173-1177

    • Peer Reviewed
  • [Journal Article] Fabrication of a memory chip by a complete self-assembly process using state-of-the-art multilevel cell (MLC) technology2008

    • Author(s)
      A.Bandyopadhyay, K.Miki
    • Journal Title

      Advanced Functional Materials 18

      Pages: 1173-1177

    • Peer Reviewed
  • [Journal Article] Electronic and transport properties of bismuth nanolines for applications in molecular electronics2007

    • Author(s)
      R.V.Belosludov, A.A.Farajian, H.Mizuseki, K.Miki, Y.Kawazoe
    • Journal Title

      Physical Review B 75

      Pages: 113411

    • Peer Reviewed
  • [Presentation] シリコン結晶中の高濃度ビスマス不純物準位からのフォトルミネスセンス2010

    • Author(s)
      村田晃一、安武裕輔、日塔光一、坂本邦博、深津晋、三木一司
    • Organizer
      第70回応用物理学会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-17
  • [Presentation] シリコン結晶中の高濃度δドーピング層ビスマス不純物のハイブリッドレーザアニール法による活性化2010

    • Author(s)
      村田晃一、安武裕輔、日塔光一、坂本邦博、深津晋、三木一司
    • Organizer
      第70回応用物理学会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
  • [Presentation] Strain field under SiO_2/Si interface revealed by multiple X-ray diffraction phenomenon2010

    • Author(s)
      Wataru Yashiro, Yoshitaka Yoda, Takashi Aratani, Akinobu Teramoto, Takeo Hattori, Kazushi Miki
    • Organizer
      The Eleventh International Conference on Surface X-ray and Neutron Scattering (SXNS-11)
    • Place of Presentation
      Northwestern University, Evanston, Illinois, invited
    • Year and Date
      2010-07-17
  • [Presentation] シリコン点欠陥(G-center)由来の狭帯域エレクトロルミネセンスとその温度依存性2010年春季2010

    • Author(s)
      安武裕輔,大村史倫,田名網宣成,村田晃一,三木一司,深津晋
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-19
  • [Presentation] Spatially resolved STS on Si(110)-16×22009

    • Author(s)
      Martin Setvin, Kazuyuki Sakamoto, Kazushi Miki
    • Organizer
      10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10)
    • Place of Presentation
      Granada, Spain
    • Year and Date
      2009-09-22
  • [Presentation] Electronic structure of Bi lines on clean and H-passivated Si(100)2009

    • Author(s)
      J.Javorsky, Kazushi Miki, James Owen, David Bowler
    • Organizer
      10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10)
    • Place of Presentation
      Granada, Spain
    • Year and Date
      2009-09-22
  • [Presentation] Novel delta doping technology with two dopants in silicon towards quantum information processing platform2009

    • Author(s)
      三木一司
    • Organizer
      JSPS (Japan Society of Promotion of Science) & RFBR (Russian Foundation of Basic Science) Joint Laboratory of interdisciplinary research SB RAS (Siberian Branch of Russian Academy of Sciences) and Tohoku University : Russian-Japanese workshop (review conference) "State of materials research and new trends in material science"
    • Place of Presentation
      RFBR (Russian Foundation of Basic Science), Novosibirsk
    • Year and Date
      2009-08-03
  • [Presentation] Photoemission and scanning tunneling microscopy studies on the Si(110)-(16×2) surface2009

    • Author(s)
      Kazushi Miki, Kazuyuki Sakamoto, Martin Setvin, Kenji Mawatari, P.E.J.Eriksson, R.I.G.Uhrberg
    • Organizer
      The Symposium on Surface and Nano Science 2009 (SSNS'09)
    • Place of Presentation
      Shizukuishi
    • Year and Date
      2009-01-17
  • [Presentation] Novel delta doping process of two or more elements in Si : usage with a surface atomic nanoline as a starting material2008

    • Author(s)
      三木一司
    • Organizer
      SYMPOSIUM ON SURFACE SCIENCE 2008
    • Place of Presentation
      St.Christoph am Arlberg, Austria
    • Year and Date
      2008-03-03
  • [Book] よくわかる最新薄膜の基本と仕組み図解入門2011

    • Author(s)
      深津晋
    • Total Pages
      211
    • Publisher
      秀和システム
  • [Patent(Industrial Property Rights)] 半導体とその製造方法(SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME)2011

    • Inventor(s)
      三木一司、八木修平、日塔光一、坂本邦博
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Number
      特許,GB2455464
    • Acquisition Date
      2011-06-29
  • [Patent(Industrial Property Rights)] 半導体とその製造方法(SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME)2007

    • Inventor(s)
      三木一司、八木修平、日塔光一、坂本邦博
    • Industrial Property Rights Holder
      物質・材料研究機構、産業技術総合研究所
    • Industrial Property Number
      特許,特願2008-530980(PCT/JP2007/066584からの移行)
    • Filing Date
      2007-08-27
  • [Patent(Industrial Property Rights)] 半導体とその製造方法(SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME)2007

    • Inventor(s)
      三木一司、八木修平、日塔光一、坂本邦博
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Number
      特許,米国出願番号12/310,396(PCT/JP2007/066584からの移行)
    • Filing Date
      2007-08-27

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Published: 2012-01-26   Modified: 2017-10-23  

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