2009 Fiscal Year Final Research Report
Control of structure and property in new low dimensional structures on Si nanomembrane
| Project/Area Number |
19206005
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
FUJIKAWA Yasunori Tohoku University, 金属材料研究所, 准教授 (70312642)
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| Co-Investigator(Renkei-kenkyūsha) |
ONO Takahito 東北大学, 工学研究科, 教授 (90282095)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 走査プローブ顕微鏡 / 低次元電気伝導 / 薄膜成長 |
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| Research Abstract |
GaN has been integrated on Si(001) via Si(111)-SOI structure by MBE, demonstrating the validity of symmetry conversion via Si(111)-SOI for epitaxial growth with symmetry mismatch. Transport properties of various low-dimensional systems have been also investigated, finding out that the conductivity of Si(111)-SOI is strongly surface dependent by scanning tunneling microscopy and 4-probe measurements.
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Research Products
(27 results)
