Nanostructure creation and its functionalization

2009 Fiscal Year Self-evaluation Report

• Project/Area Number: 19206016
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: The University of Tokyo
• Principal Investigator: ISHIHSRA Sunao The University of Tokyo, 大学院・工学系研究科, 教授 (00422329)
• Project Period (FY): 2007 – 2010
• Keywords: ナノメカニクス / マイクロ・ナノデバイス / 三次元ナノ構造 / ナノ振動子 / センシングデバイス / ナノ加工・計測 / 機械共振特性 / 電子ビーム・イオンビーム

Research Abstract

三次元ナノメカニカル構造としてナノ振動子を取り上げ,振動子構造の設計法,三次元ナノ構造作製技術の開発,機械振動測定法の開発と共振特性の解明,およびそのセンシングデバイスへの応用など,ナノ振動子の創製とその機能化のための基盤技術の構築を進めた.

Research Products

• [Journal Article] Evaluations of the hopping growth characteristics on 3-D nanostructure fabrication using focused-ion-beam (2009)
  • Author(s): R. Kometani, S. Warisawa, S. Ishihara
  • Journal Title: J.Vac.Sci.Technol. B27 Pages: 2698-2701
  • Peer Reviewed
• [Journal Article] Evaluating Method for Quality Factor of Nano-resonator by Electron Beam (2009)
  • Author(s): H. Ashiba, S. Warisawa, S. Ishihara
  • Journal Title: Jpn.J.Appl.Phys. 48 Pages: 06FG08-1-5
  • Peer Reviewed
• [Journal Article] Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy (2009)
  • Author(s): K. Tamaru, K. Nonaka, M. Nagase, H. Yamaguchi, S. Warisawa, S. Ishihara
  • Journal Title: Jpn.J.Appl.Phys. 48 Pages: 06FG06-1-5
  • Peer Reviewed
• [Journal Article] Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain (2008)
  • Author(s): H. Yamaguchi, K. Kato, Y. Nakai, K. Onomitsu, S. Warisawa, S. Ishihara
  • Journal Title: App.Phys.Lett. 92 Pages: 251913-1-3
  • Peer Reviewed
• [Presentation] High-sensitive charge detection using anti-symmetric vibration in coupled micromechanical resonators (2009)
  • Author(s): N. Kitajima, H. Okamoto, T. Kamada, K. Onomitsu, S. Warisawa, S. Ishihara, H. Yamaguchi
  • Organizer: 22nd Intern'l Microprocesses & Nanotechnology Conf. (MNC2009)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2009-11-18
• [Remarks]
  • URL: http://www.nanome.t.u-tokyo.ac.jp
• [Patent(Industrial Property Rights)] 薄膜振動子およびその製造方法 (2009)
  • Inventor(s): 永瀬雅夫, 山口浩司, 石原直, 割澤伸一, 田丸耕二郎
  • Industrial Property Rights Holder: 東京大学,日本電信電話(株)
  • Industrial Property Number: 特許,特願2009-078589
  • Filing Date: 2009-03-27
• [Patent(Industrial Property Rights)] 微小機械共振器ならびに微小機械検出素子 (2008)
  • Inventor(s): 石原直, 割澤伸一, 加藤慶一, 山口浩司, 小野満恒二
  • Industrial Property Rights Holder: 東京大学, 日本電信電話 (株)
  • Industrial Property Number: 特許特願2008-70933
  • Filing Date: 2008-03-19