2009 Fiscal Year Final Research Report
Development of Quantum Integrated Hardwares based on Semiconductor Nanowires
| Project/Area Number |
19206031
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
MOTOHISA Junichi Hokkaido University, 大学院・情報科学研究科, 教授 (60212263)
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| Co-Investigator(Kenkyū-buntansha) |
IKEBE Masayuki 北海道大学, 大学院・情報科学研究科, 准教授 (20374613)
橋詰 保 北海道大学, 量子集積エレクトロニクス研究センター, 教授 (80149898)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 半導体ナノワイヤ / 量子集積ハードウェア / 電界効果トランジスタ / 有機金属気相成長法 / 選択成長 / 論理回路 |
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| Research Abstract |
We developed a formation method of high-density and highly uniform array of semiconductor nanowires to realize quantum integrated hardwares. In particular, fabrication and characterization of nanowire field-effect transistors (FETs) were charried out, and vertical nanowire FETs on Si substrates were demonstrated. We also proposed vertically-integrated logic circuits based on vertical FETs and investigated a method to laterally align nanowires for their high-density integration.
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[Presentation] (InGa)As Nanowire Field Effect Transistors2007
Author(s)
J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
Organizer
the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007)
Place of Presentation
Waikoloa, Hawaii, USA
Year and Date
20071202-20071207
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