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2008 Fiscal Year Annual Research Report

CVD原子層積層による高キャリア濃度・高移動度IV族半導体人工結晶の創成

Research Project

Project/Area Number 19206032
Research InstitutionTohoku University

Principal Investigator

室田 淳一  Tohoku University, 電気通信研究所, 教授 (70182144)

Co-Investigator(Kenkyū-buntansha) 櫻庭 政夫  東北大学, 電気通信研究所, 准教授 (30271993)
Keywords化学気相成長(CVD) / IV族半導体 / 原子層積層 / 原子層ドーピング / 人工結晶
Research Abstract

本基盤研究では、異種原子層配列制御と同時に非平衡原子層ドーピングを極限まで高度化して、高キャリア濃度・高移動度IV族半導体人工結晶を創成し、Si-Ge系混晶、不純物ドープSiやGe結晶等でのランダムな異種原子配列に起因する局所的な構造・物性のばらつきを抑制する技術を確立しようとするものである。本年度は、原子層オーダで界面が制御された超高移動度IV族半導体異種原子層積層人工結晶膜の実現を目標とし、高Ge組成の高度歪IV族半導体ヘテロエピタキシャル積層について研究を進めた結果、不純物ドープIV族半導体の超高キャリア濃度化を目標として、高清浄減圧CVD法による原子レベルで平坦な高濃度P原子層ドーピングについて研究を進めた結果、Siキャップ層形成におけるSi_2H_6分圧が高いほど、閉じ込められるP原子の量が増加することを見いだした。また、Si_<1-x>Ge_x層表面の低温SiH_4処理の適用により、高Ge比率(58%)の表面ラフネスを効果的に抑制できることを見いだすと同時に、Ge比率変調構造共鳴トンネルダイオード製作プロセスへの適用により、310K付近まで負性抵抗特性を観測することに成功した。さらに、原子層Nドーピングについて研究を進めた結果、SiGe薄膜中の約1.5nmの極薄領域にN原子を閉じ込めることに成功した。また、熱処理によりGe-N結合が減少し、Si-N結合が増加する傾向があり、窒化層との界面近傍において高Ge比率化が起こることを見いだした。以上のように、化学気相成長原子層積層技術による高キャリア濃度・高移動度IV族半導体人工結晶の創成のために重要な成果を得た。

  • Research Products

    (15 results)

All 2008

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (9 results)

  • [Journal Article] High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD2008

    • Author(s)
      S. Takehiro
    • Journal Title

      Electr. Eng. Jpn 165

      Pages: 46-50

    • Peer Reviewed
  • [Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008

    • Author(s)
      T. Seo
    • Journal Title

      Thin Solid Films 517

      Pages: 110-112

    • Peer Reviewed
  • [Journal Article] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment2008

    • Author(s)
      N. Akiyama
    • Journal Title

      Thin Solid Films 517

      Pages: 219-221

    • Peer Reviewed
  • [Journal Article] Si Epitaxial Growth on Self-Limitedly B Adsorbed Si1-xGex(100) by Ultraclean Low-Pressure CVD System2008

    • Author(s)
      K. Ishibashi
    • Journal Title

      Thin Solid Films 517

      Pages: 229-231

    • Peer Reviewed
  • [Journal Article] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning2008

    • Author(s)
      J. Uhm
    • Journal Title

      Thin Solid Films 517

      Pages: 300-302

    • Peer Reviewed
  • [Journal Article] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth2008

    • Author(s)
      S. Takehiro
    • Journal Title

      Thin Solid Films 517

      Pages: 346-349

    • Peer Reviewed
  • [Presentation] Atomically Controlled Processing in Si-Based CVD Epitaxial Growth (Invited Paper)2008

    • Author(s)
      J. Murota
    • Organizer
      Int. Union of Mat. Res. Soc. -Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      20081209-13
  • [Presentation] Nitrogen Atomic-Layer Doping in Nanometer-Order Heterostructure of Si/Si_<1-x>Ge_x/Si(100) by Ultraclean Low-Pressure CVD2008

    • Author(s)
      T. Kawashima
    • Organizer
      Int. Union of Mat. Res. Soc. -Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      20081209-13
  • [Presentation] Atomically Controlled CVD Processing for Future Si-Based Devices (Invited Paper)2008

    • Author(s)
      J. Murota
    • Organizer
      9th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2008)
    • Place of Presentation
      Beijing, China
    • Year and Date
      20081020-23
  • [Presentation] P Atomic-Layer Doping in Heteroepitaxial Growth of Si on Strained Si1-xGex/Si(100) by Ultraclean-Low-Pressure CVD2008

    • Author(s)
      Y. Chiba
    • Organizer
      4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20080925-27
  • [Presentation] Formation of Nitrogen Atomic-Layer Doped Si/Si1-xGex/Si(100) Epitaxially Grown by Ultraclean Low-Pressure CVD2008

    • Author(s)
      T. Kawashima
    • Organizer
      4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20080925-27
  • [Presentation] Heat-Treatment Effect upon H-Terminated Structure Formed on Wet-Cleaned Si(100) and Ge(100)2008

    • Author(s)
      A. Uto
    • Organizer
      4th Int. Workshop on New Group IV Semiconductor Nannelectronics
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20080925-27
  • [Presentation] Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth (Invited Paper)2008

    • Author(s)
      J. Murota
    • Organizer
      8th Int. Conf. on Atomic Layer Deposition (ALD 2008)
    • Place of Presentation
      Bruges, Belgium
    • Year and Date
      20080629-0702
  • [Presentation] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System2008

    • Author(s)
      H. Tanno
    • Organizer
      4th Int. SiGe Technology and Device Meeting (ISTDM2008)
    • Place of Presentation
      Hsinchu, Taiwan
    • Year and Date
      20080511-14
  • [Presentation] Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H2 or Ar2008

    • Author(s)
      A. Uto
    • Organizer
      4th Int. SiGe Technology and Device Meeting (ISTDM2008)
    • Place of Presentation
      Hsinchu, Taiwan
    • Year and Date
      20080511-14

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Published: 2010-06-11   Modified: 2016-04-21  

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