2009 Fiscal Year Final Research Report
Creation of High-Carrier-Concentration and High-Mobility Artificial Crystal of Group IV Semiconductors by Atomically Controlled CVD Processing
| Project/Area Number |
19206032
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
MUROTA Junichi Tohoku University, 電気通信研究所, 教授 (70182144)
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| Co-Investigator(Kenkyū-buntansha) |
SAKURABA Masao 東北大学, 電気通信研究所, 准教授 (30271993)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 化学気相成長(CVD) / IV族半導体 / 原子層積層 / 原子層ドーピング / 人工結晶 |
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| Research Abstract |
N atomic-layer doping in SiGe by SiGe deposition on a thermally nitrided SiGe surface and highly concentrated P atomic-layer doping by lowering temperature of Si deposition on a P atomic layer already formed strained SiGe surface were achieved. Moreover, by lowering temperature of B and subsequent Si depositions on a Si surface, B atomic-layer doped Si with higher carrier concentration was achieved. Additionally, it was clarified that suppression of intermixing and strain relaxation by C atomic-layer doping at a strained SiGe/Si heterointerface and that, in thermal CVD of SiGe and B doped Si epitaxial films, strain significantly influences upon surface reaction, segregation, solid solubility limit and electrical activity of impurity.
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Research Products
(49 results)
