2009 Fiscal Year Final Research Report
Integrated Assembly of NeoSilicon towards Quantum Information Devices
| Project/Area Number |
19206035
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ODA Shunri Tokyo Institute of Technology, 量子ナノエレクトロニクス研究センター, 教授 (50126314)
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| Co-Investigator(Kenkyū-buntansha) |
MIZUTA Hiroshi 東京工業大学, 大学院・理工学研究科, 連携教授 (90372458)
UCHIDA Ken 東京工業大学, 大学院・理工学研究科, 准教授 (30446900)
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| Co-Investigator(Renkei-kenkyūsha) |
TSUCHIYA Yoshishige サザンプトン大学, 電子情報研究科, 講師 (80334506)
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| Project Period (FY) |
2007 – 2009
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| Keywords | ナノ結晶シリコン / ナノシリコンインク / ディップコーティング / 量子情報デバイス / 多重結合量子ドット / スピンブロッケード |
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| Research Abstract |
Integrated assembly of NeoSilicon materials has been investigated. Nano Si ink has been prepared using optimized surface modification of Si nanocrystals and two dimensional arrays of NeoSilicon have been realized. Electron transport characteristics have been measured from multiple coupled quantum dot devices based on Electron beam lithography of silicon-on insulator substrates.
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