2009 Fiscal Year Final Research Report
Development of nitride-semiconductor based green laser diodes on a novel semipolar plane
| Project/Area Number |
19206036
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
FUNATO Mitsuru Kyoto University, 大学院・工学研究科, 准教授 (70240827)
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| Co-Investigator(Kenkyū-buntansha) |
KAWAKAMI Yoichi 京都大学, 大学院・工学研究科, 教授 (30214604)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 薄膜 / 量子構造 / 窒化物半導体 / 緑色レーザ / 半極性結晶面 / 発光効率 / 偏光 |
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| Research Abstract |
Aiming to fabricate laser diodes based on InGaN/GaN quantum wells (QWs) on a novel semipolar (11-22) plane, crystal growth and optical characterization were performed. Growth conditions for each constituent layer have been established. As for optical anisotropy, the polarization was the TE polarization, independent of QW structures. It has been found for the first time that, when the In composition is less than 30%, the in-plane polarization was in the [1-100] direction, whereas, In compositions greater than 30% cause polarization switching to the [-1-123] direction.
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