2010 Fiscal Year Final Research Report
Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals
| Project/Area Number |
19206037
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
ENDOH Tetsuo Tohoku University, 学際科学国際高等研究センター, 教授 (00271990)
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| Co-Investigator(Kenkyū-buntansha) |
SUEMITSU Maki 東北大学, 電気通信研究所, 教授 (00134057)
CHIKYOW Toyohiro 物質・材料研究機構, 半導体材料センター, センター長 (10354333)
NAKAYAMA Takashi 千葉大学, 理学系研究科, 教授 (70189075)
YAMADA Keisaku 筑波大学, 数理物質科学研究科, 教授 (30386734)
SHINADA Takahiro 早稲田大学, 高等研究所, 准教授 (30329099)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 半導体デバイス / 集積回路 / ナノデバイス / シリコン結晶シリコンデバイス / 不純物ドープ / 表面科学 / 電子物性 |
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| Research Abstract |
The influences of the interface roughness, the dopant distribution fluctuation and the surface potential variability on the device performance of nano-scale Si-based semiconductor devices were investigated. As a result, a deep understanding of suppressing the statistical variability was obtained in both material and device levels. These results indicate the guideline for developing the future nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals.
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[Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010
Author(s)
T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
Organizer
IEDM 2010
Place of Presentation
San Francisco USA
Year and Date
20101206-20101208
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