2010 Fiscal Year Final Research Report
Development of Dimension-Controlled Narrow-gap Semiconductor Devices
| Project/Area Number |
19206067
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
FUJIWARA Takumi 東北大学, 大学院・工学研究科, 教授 (10278393)
MIYAZAKI Yuzuru 東北大学, 大学院・工学研究科, 准教授 (40261606)
HAYASHI Kei 東北大学, 大学院・工学研究科, 助教 (70360625)
YUBUTA Kunio 東北大学, 金属材料研究所, 准教授 (00302208)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 半導体 / 熱電物性 / ナローギャップ / 合成 / 結晶構造 / 中性子回折 / インターカレーション |
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| Research Abstract |
This project was aimed to develop high performance thermoelectric devices which can directly convert the heat flux to the electrical current. Theoretically, it has been expected that the dimensional controlling, namely developing the two-dimensional device, i. e. thin layered devices as well as two-dimensional layered synthetic crystals might exhibit enhanced thermoelectric performance. Recently, one paper showed that high-performance 2D-device ; i. e., being 2. 5 times high relative to the 3D one, was developed. In this project, thin pulsed laser deposition films, vacuum evaporation films and synthetic layered semiconductors were studied.
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