Studies on single-electron devices and circuits based on silicon integrated circuit process

2009 Fiscal Year Final Research Report

• Project/Area Number: 19310093
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: Shizuoka University
• Principal Investigator: INOKAWA Hiroshi Shizuoka University, 電子工学研究所, 教授 (50393757)
• Co-Investigator(Kenkyū-buntansha): FUJIWARA Akira 日本電信電話(株), 物性科学基礎研究所, 主幹研究員 (70393759) ; NISHIGUCHI Katsuhiko 日本電信電話(株), 物性科学基礎研究所, 研究主任 (00393760)
• Project Period (FY): 2007 – 2009
• Keywords: 単量子デバイス

Research Abstract

標準的なシリコン(Si)集積回路プロセスを用いて、ゲート電圧で誘起されたトンネルバリアを有する単電子デバイスを検討した。Si細線に2本のゲートが横切るタイプの単電子転送デバイスを中心に特性を調べ、容量パラメータの抽出法の提案、転送電流に重畳するノイズの解析、回路動作高速化の検討、種々の情報処理回路の動作実証などを行った。その結果、Si集積回路プロセスにより単電子デバイス・回路を構成し研究を進めて行く礎が築かれた。

Research Products

• [Journal Article] Low Frequency Noise Characterization in Metal-Oxide-Semiconductor Field-Effect Transistor Based Charge Transfer Device at Room and Low Temperatures (2010)
  • Author(s): Vipul Singh, Hiroshi Inokawa, Tetsuo Endoh, Hiroaki Satoh
  • Journal Title: Jpn. J. Appl. Phys Vol.49 Pages: 034203-1~4
  • Peer Reviewed
• [Journal Article] Fabrication of double-dot single-electron transistor in silicon nanowire (2010)
  • Author(s): Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi, Yasuo Takahashi
  • Journal Title: Thin Solid Films Vol.518 Pages: S186-S189
  • Peer Reviewed
• [Journal Article] Analysis of Current Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Hiroshi Inokawa, Vipul Singh, Hiroaki Satoh
  • Journal Title: Journal of Automation, Mobile Robotics & Intelligent Systems Vol.3 Pages: 72-75
  • Peer Reviewed
• [Journal Article] Single-Electron Device With Si Nanodot Array and Multiple Input Gates (2009)
  • Author(s): Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi
  • Journal Title: IEEE Trans. Nanotechnol Vol.8 Pages: 535-541
  • Peer Reviewed
• [Journal Article] Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs (2009)
  • Author(s): Kaizawa Takuya, Jo Mingyu, Arita Masashi, Fujiwara Akira, Yamazaki Kenji, Ono Yukinori, Inokawa Hiroshi, Takahashi Yasuo, Choi Jung-Bum
  • Journal Title: International Journal of Nanotechnology and Molecular Computation Vol.1 Pages: 58-69
  • Peer Reviewed
• [Journal Article] Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature (2009)
  • Author(s): K Nishiguchi, A Fujiwara
  • Journal Title: Nanotechnology Vol.20 Pages: 175201_1-6
  • Peer Reviewed
• [Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metaloxide-semiconductor field-effect transistor (2008)
  • Author(s): Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
  • Journal Title: Appl. Phys. Lett Vol.93 Pages: 222103_1-3
  • Peer Reviewed
• [Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor (2008)
  • Author(s): Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi
  • Journal Title: Jpn. J. Appl. Phys Vol.47 Pages: 8305-8310
  • Peer Reviewed
• [Journal Article] Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones (2008)
  • Author(s): Neil M. Zimmerman, William H. Huber, Brian Simonds, Emmanouel Hourdakis, Akira Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa, Miha Furlan, Mark W. Keller
  • Journal Title: J. Appl. Phys Vol.104 Pages: 033710_1-12
  • Peer Reviewed
• [Journal Article] A gate-defined silicon quantum dot molecule (2008)
  • Author(s): Hongwu Liu, Toshimasa Fujisawa, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama
  • Journal Title: Appl. Phys. Lett Vol.92 Pages: 222104_1-3
  • Peer Reviewed
• [Journal Article] Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs (2008)
  • Author(s): Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono, Hiroaki Satoh
  • Journal Title: IEEJ Trans. EIS Vol.128 Pages: 905-911
  • Peer Reviewed
• [Journal Article] Pauli-spin-blockade transport through a silicon double quantum dot (2008)
  • Author(s): H.W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, Y. Hirayama
  • Journal Title: Phys. Rev. B Vol.77 Pages: 073310_1-4
  • Peer Reviewed
• [Journal Article] Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors (2008)
  • Author(s): K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
  • Journal Title: Appl. Phys. Lett Vol.92 Pages: 062105_1-3
  • Peer Reviewed
• [Journal Article] Silicon singlecharge transfer devices (2008)
  • Author(s): Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Yasuo Takahashi, Hiroshi Inokawa
  • Journal Title: J. Phys. Chem. Solid Vol.69 Pages: 702-707
  • Peer Reviewed
• [Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor (2008)
  • Author(s): Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
  • Journal Title: Appl. Phys. Lett Vol.92 Pages: 042102_1-3
  • Peer Reviewed
• [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires (2007)
  • Author(s): Daniel Moraru, Yukinori Ono, Hiroshi Inokawa, Michiharu Tabe
  • Journal Title: Phys. Rev. B Vol.76 Pages: 075332_1-5
  • Peer Reviewed
• [Journal Article] Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor (2007)
  • Author(s): W.C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N.J. Wu
  • Journal Title: IEICE Trans. Electron Vol.E90C Pages: 943-948
  • Peer Reviewed
• [Journal Article] Design of a Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors (2007)
  • Author(s): K. Degawa, T. Aoki, T. Higuchi, H. Inokawa, Y. Takahashi
  • Journal Title: Journal of Multiple-Valued Logic and Soft Computing Vol.13 Pages: 249-266
  • Peer Reviewed
• [Presentation] Fabrication of triple-dot single-electron transistor and its single-electron- transfer operation (2009)
  • Author(s): M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J. -B. Choi
  • Organizer: International Symposium on Advanced Nanodevices and Nanotechnology
  • Place of Presentation: Kaanapali, Hawaii
  • Year and Date: 20091129-20091204
• [Presentation] Unique Short-Channel Characteristics in Sub-100 nm MOSFETs with Inversion-Layer Source/Drain (2009)
  • Author(s): Vipul Singh, Hiroshi Inokawa, Hiroaki Satoh
  • Organizer: 22nd International Microprocesses and Nanotechnology Conference
  • Place of Presentation: Sapporo(508-509)
  • Year and Date: 20091116-20091119
• [Presentation] Low-Frequency Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Vipul Singh, Hiroshi Inokawa, Hiroaki Satoh
  • Organizer: 2009 Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Sendai(587-588)
  • Year and Date: 20091007-20091009
• [Presentation] Analysis of Current Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Hiroshi Inokawa, Vipul Singh, Hiroaki Satoh
  • Organizer: The 8th International Conference on Global Research and Education
  • Place of Presentation: Kazimierz Dolny & Warsaw, Poland(411- 416)
  • Year and Date: 20090914-20090917
• [Presentation] Escape dynamics of electrons in a single-electron ratchet using silicon nanowire MOSFETs (2008)
  • Author(s): Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
  • Organizer: The IEEE Nanotechnology Materials and Devices Conference
  • Place of Presentation: Kyoto
  • Year and Date: 20081020-20091022
• [Presentation] Single-Dopant Effect in Si MOSFETs (2008)
  • Author(s): Y. Ono, M.A.H. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa
  • Organizer: The IEEE Nanotechnology Materials and Devices Conference
  • Place of Presentation: Kyoto
  • Year and Date: 20081020-20081022
• [Presentation] A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs (2007)
  • Author(s): H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, H. Satoh
  • Organizer: The 6th International Conference on Global Research and Education
  • Place of Presentation: Hamamatsu
  • Year and Date: 20070926-20070930
• [Presentation] Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors (2007)
  • Author(s): Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
  • Organizer: 2007 Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba
  • Year and Date: 20070919-20070921
• [Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs (2007)
  • Author(s): Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
  • Organizer: 2007 Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba
  • Year and Date: 20070919-20070921
• [Presentation] Room-temperatureoperating single-electron devices using silicon nanowire MOSFET (2007)
  • Author(s): Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
  • Organizer: 2007 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices
  • Place of Presentation: Gyeongju, Korea
  • Year and Date: 20070625-20070627
• [Book] "Silicon Single-Electron Devices, " in Device Applications of Silicon Nanocrystals and Nanostructures Koshida, Nobuyoshi (ed.) (2009)
  • Author(s): Yasuo Takahashi, Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Hiroshi Inokawa
  • Total Pages: 125-172
  • Publisher: Springer
• [Book] "Single-Electron Transistor and its Logic Application" in Nanotechnology (2008)
  • Author(s): Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Katsuhiko Nishiguchi, Akira Fujiwara
  • Total Pages: 45-68
  • Publisher: Wiley-VCH
• [Remarks]
  • URL: http://www.rie.shizuoka.ac.jp/~nanosys/