2010 Fiscal Year Final Research Report
Development of High-Performance Organic Field-Effect Transistors Based on Novel Organic Semiconductors
| Project/Area Number |
19350092
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
YAMASHITA Yoshiro Tokyo Institute of Technology, 総合理工学研究科, 教授 (90116872)
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| Co-Investigator(Kenkyū-buntansha) |
NISHIDA Junichi 東京工業大学, 大学院・総合理工学研究科, 助教 (70334521)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 有機半導体 / 有機トランジスタ / 有機エレクトロニクス / 機能材料 / 合成化学 |
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| Research Abstract |
We have developed novel organic semiconductors and fabricated organic field-effect transistors based on them. Guidelines of molecular design for high-performance FETs have been proposed. In particular, n-type organic semiconductors with high stability in air have been successfully developed by considering energy levels of frontier orbitals and intermolecular interactions, leading to fabrication of high-performance n-type thin-film transistors.
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