2009 Fiscal Year Final Research Report
Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structures
| Project/Area Number |
19360003
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
ONABE Kentaro The University of Tokyo, 大学院・新領域創成科学研究科, 教授 (50204227)
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| Co-Investigator(Kenkyū-buntansha) |
KATAYAMA Ryuji 東北大学, 金属材料研究所, 准教授 (40343115)
YAMAMOTO Takahisa 東京大学, 大学院・新領域創成科学研究科, 准教授 (20220478)
YAGUCHI Hiroyuki 埼玉大学, 大学院・理工学研究科, 教授 (50239737)
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| Project Period (FY) |
2007 – 2009
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| Keywords | エピタキシャル成長 / 希薄窒化物半導体 / III-V-N混晶 / 量子ナノ構造 |
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| Research Abstract |
In-containing III-V-N type alloy semiconductors, such as InAsN, InGaAsN, InGaPN and InPN, have been grown by MOVPE in the form of thin films or quantum dots. The growth characteristics and material properties, such as bandgap reduction and luminescence, have been clarified in relation with the N incorporation. In particular, room-temperature photoluminescence of 1.2μm wavelength has been realized with the InAsN quantum dots. A novel potential of III-V-N type alloy semiconductors for useful applications has been demonstrated with this study.
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Research Products
(31 results)
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[Presentation] InAsN薄膜の光学的特性2008
Author(s)
窪谷茂幸, 黒田正行, 西尾晋, ティユクァントゥ, 片山竜二, 尾鍋研太郎
Organizer
第69回応用物理学会学術講演会
Place of Presentation
中部工業大学 (愛知)
Year and Date
2008-09-03
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