2009 Fiscal Year Final Research Report
High-Quality Formation of SiGe on Flexible Substrates for Transistor Application
| Project/Area Number |
19360011
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
MIYAO Masanobu Kyushu University, 大学院・システム情報科学研究院, 教授 (60315132)
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| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
HAMAYA Kohei 九州大学, 大学院・システム情報科学研究院, 准教授 (90401281)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 電子デバイス・機器 / 集積回路 / ディスプレイ / シリコンゲルマニウ / 薄膜トランジスタ |
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| Research Abstract |
Low-temperature growth of SiGe has been investigated to realize the flexible system-in-displays. We have developed a new solid-phase crystallization technique, which uses catalytic effects of some metals and electric-fields. Consequently, the low-temperature crystallization (<250℃) becomes possible. Moreover, new type of transistors having source and drain electrodes with Schottky barrier contacts have been fabricated. Very high carrier mobility compared to poly-Si has been demonstrated.
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