2009 Fiscal Year Final Research Report
Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses
Project/Area Number |
19360014
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Thin film/Surface and interfacial physical properties
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Research Institution | Tohoku University |
Principal Investigator |
HATTORI Takeo Tohoku University, 未来科学技術共同研究センター, 教授 (10061516)
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Co-Investigator(Kenkyū-buntansha) |
KIMURA Kenji 京都大学, 工学(系)研究科(研究院), 教授 (50127073)
NAKAJIMA Kaoru 京都大学, 工学(系)研究科(研究院), 助教 (80293885)
NOHIRA Hiroshi 東京都市大学, 工学部, 准教授 (30241110)
TERAMOTO Akinobu 東北大学, 未来科学技術共同研究センター, 准教授 (80359554)
SUWA Tomoyuki 東北大学, 未来科学技術共同研究センター, 助教 (70431541)
KINOSHITA Toyohiko (財)高輝度光科学研究センター, 分子物性IIグループ, 主席研究員 (60202040)
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Project Period (FY) |
2007 – 2009
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Keywords | 界面 |
Research Abstract |
Composition and chemical structures of high quality Si-SiO_2 systems formed using oxygen radicals and those of high quality Si-Si_3N_4 systems formed using nitrogen-hydrogen radicals were studied by measuring angle-resolved photoelectron spectra arising from Si 2p and O 1s core levels and valence band with the same probing depth.
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[Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010
Author(s)
T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
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Journal Title
Applied Physics Letters Vol. 96, No. 10
Pages: 104908-1-3
Peer Reviewed
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[Journal Article] Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film2009
Author(s)
K. Kakushima, K. Tachi, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
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Journal Title
Journal of Applied Physics Vol. 106, No. 12
Pages: 124903-1-6
Peer Reviewed
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[Journal Article] Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface2009
Author(s)
R. Kuroda, A. Teramoto, Y. Nakao, T. Suwa, M. Konda, R. Hasebe, X. Li, T. Isogai, H. Tanaka, S. Sugawa, T. Ohmi
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Journal Title
Jpn.J.Appl.Phys vol. 48
Pages: 04C048-1-6
Peer Reviewed
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[Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals2008
Author(s)
T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
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Journal Title
Journal of Applied Physics Vol. 104, No. 11
Pages: 114112-1-3
Peer Reviewed
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[Journal Article] Obser-vation of band bending of metal/high-k Si capacitor with high energy x-ray photo-electron spectroscopy and its application to interface dipole measurement2008
Author(s)
K. Kakushima, K. Okamoto, K. Tachi, J. Song, T. Kawanago, K. Tsutsui, N. Sugii, P. Ahmet, T. Hattori, H. Iwai
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Journal Title
Journal of Applied Physics Vol. 104, No. 10
Pages: 104908-1-3
Peer Reviewed
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[Journal Article] Activated boron and its concen-tration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements2008
Author(s)
K. Tsutsui, T. Matsuda, M. Watanabe, C-G Jin, Y. Sasaki, B. Mizuno, E. Ikenaga, K. Kakushima, P. Alhmet, T. Maruizumi, H. Nohira, T. Hattori, H. Iwai
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Journal Title
Journal of Applied Physics Vol. 104, No. 9
Pages: 093799-1-3
Peer Reviewed
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[Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy2008
Author(s)
M. Murugesan, J. C. Bea, C.-K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
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Journal Title
Journal of Applied Physics Vol. 104, No. 7
Pages: 074316-1-5
Peer Reviewed
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[Journal Article] Band bending measurement of HfO_2/SiO_2/Si capacitor with ultra-thin La_2O_3 insertion by XPS2008
Author(s)
K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
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Journal Title
Applied Surface Science Vol. 254
Pages: 6106-6108
Peer Reviewed
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[Journal Article] Electrical Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si (110) and Si (100) Surfaces2007
Author(s)
M. Higuchi, T. Aratani, T. Hamada, S. Shinagawa, H. Nohira, E. Ikenaga, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi
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Journal Title
Japanese Journal of Applied Physics Vol. 46, No. 4B
Pages: 1895-1898
Peer Reviewed
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[Journal Article] Very High Carrier Mobility for High-Performance CMOS on a Si (110) Surface2007
Author(s)
A. Teramoto, T. Hamada, M. Yamamoto, P. Gaubert, H. Akahori, K. Nii, M. Hirayama, K. Arima, K. Endo, S. Sugawa, T. Ohmi
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Journal Title
IEEE Trans.Electron Devices Vol. 54, No. 6
Pages: 1438-1445
Peer Reviewed
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[Presentation] 原子スケールで平坦なSiO_2/Si界面極近傍における歪評価2010
Author(s)
服部真季, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘, 小金澤智之, 廣沢一郎
Organizer
応用物理学会、19p-P13-13
Place of Presentation
東海大学
Year and Date
2010-03-19
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[Presentation] Study on Compositional Tran-sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009
Author(s)
T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori
Organizer
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009)
Place of Presentation
Busan, Korea
Year and Date
2009-06-25
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[Presentation] Evaluation of Si_3N_4/Si Interface by UV Raman Spectroscopy2007
Author(s)
T. Yoshida, K. Yamasaki, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori
Organizer
Fifth International symposium on Control of Semiconductor Interfaces, OA2-5
Place of Presentation
Hachioji, Tokyo
Year and Date
2007-11-13