2009 Fiscal Year Final Research Report
Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering method
| Project/Area Number |
19360137
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
CHICHIBU Shigefusa Tohoku University, 多元物質科学研究所, 教授 (80266907)
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| Co-Investigator(Renkei-kenkyūsha) |
UEDONO Akira 筑波大学, 数理物質科学研究科, 教授 (20213374)
SOTA Takayuki 早稲田大学, 理工学術院, 教授 (90171371)
SUGIYAMA Mutsumi 東京理科大学, 理工学部, 講師 (40385521)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 電気・電子材料 / 微小共振器 / 励起子 / 励起子ポラリトン / 酸化亜鉛 / エピタキシー / ヘリコン波励起プラズマ |
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| Research Abstract |
A cavity polariton laser is attracting attention as a new generation coherent light source composed of a semiconductor microcavity. In the present research, epitaxial growth of single crystalline ZnO and MgZnO films exhibiting atomically flat surfaces and abrupt heterointerfaces was carried out using an uniquely designed 'helicon-wave-excited-plasma sputtering epitaxy (HWPSE)' method, in order to assess if ZnO microcavities can be prepared by the method. The epilayer properties resemble those of the films grown using conventional advanced epitaxial growth methods such as molecular beam epitaxy and metalorganic vapor phase epitaxy. In addition, anatase phase Nb-doped TiO_2 films, a new transparent conducting oxide having the refractive index close to GaN, were epitaxially grown. The findings that those new functional semiconductor epilayers can be grown by the inexpensive HWPSE method may cut open the way to fabricate semiconductor heterostructure quantum devices at a low price.
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[Remarks] 受賞 : 第27回 応用物理学会講演奨励賞、2009年秋季応用物理学会、ヘリコン波励起プラズマスパッタエピタキシーによるZn極性ZnO基板上へのホモエピ成長、澤井泰,天池宏明,羽豆耕治,秩父重英
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