Basic Research for Carbon Electronics Devices using Solid C_<60> and/or Graphene

2009 Fiscal Year Final Research Report

• Project/Area Number: 19360141
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Fukui
• Principal Investigator: HASHIMOTO Akihiro University of Fukui, 大学院・工学研究科, 准教授 (10251985)
• Co-Investigator(Kenkyū-buntansha): YAMAMOTO Akio 福井大学, 大学院・工学研究科, 教授 (90210517) ; KUZUHARA Masaaki 福井大学, 大学院・工学研究科, 教授 (20377469) ; FUKUI Kazutoshi 福井大学, 大学院・工学研究科, 教授 (80156752) ; SHIOJIMA Kenji 福井大学, 大学院・工学研究科, 准教授 (70432151)
• Project Period (FY): 2007 – 2009
• Keywords: 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / 固相C_<60>薄膜 / グラフェン / 炭素系デバイス / SiC基板 / 電界効果トランジスタ / AlN単結晶薄膜

Research Abstract

本研究は、固相C60FETのゲート膜として(1)Siあるいは導電性SiC基板上の単結晶AlN薄膜を用いること、及び(2)平坦化されたSiO_2膜上にグラフェンを転写して規則的なパターンを形成する、という2つの新たな方法を提案することにより単結晶C_<60>薄膜と絶縁膜の制御された界面を形成することで電界効果によるキャリア注入の本質を明らかにしようとするものである。
研究の結果、以下の知見を得た。すなわち、前記(1)については、理想界面を有する固相C_<60>層のエピタキシャル成長に必要な6H-SiC基板上の原子レベルで表面平坦なAlN表面の形成には、CMP処理SiC(0001)基板の減圧水素高温処理により6ML高さにステップ制御をした基板が必要であることを明らかにした。また、(2)については、微傾斜SiC基板上に形成したグラフェン多層膜上には、固相C_<60>が、ステップフローモードで成長することを見出し、核形成を電子線照射により制御できることを明らかにした。また、層数を制御した1層グラフェン層及び2層グラフェン層をSiO_2基板上への大面積直接転写に世界で初めて成功した。これらの研究成果は、理想的な界面形成技術の向上に大きな寄与を与えるものと考えられ、固相C_<60>及びグラフェンを用いた炭素系デバイスの研究に大きく貢献するものと考えられる。

Research Products

• [Journal Article] (2010)
  • Author(s): A. Hashimoto
  • Journal Title: Nano-electronics & Nanophotonics 6 Pages: 15. 01-15. 22
• [Journal Article] (2009)
  • Author(s): M. Horie, K. Sugita, A. Hashimoto, A. Yamamoto
  • Journal Title: Solar Energy Materials and Solar Cells 93 Pages: 1013-1015
• [Journal Article] (2009)
  • Author(s): Md. R. Islam, K. Sugita, M. Horie, A. Hashimoto, A. Yamamoto
  • Journal Title: J. Cryst. Growth 31 Pages: 2817-2820
• [Journal Article] (2009)
  • Author(s): K. Sugita, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol 6 Pages: 393-396
• [Journal Article] (2009)
  • Author(s): K. Sugita, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol 6 Pages: 389-392
• [Journal Article] (2009)
  • Author(s): T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
  • Journal Title: J. Appl. Phys 106 Pages: 053525-1-053525-4
• [Journal Article] (2009)
  • Author(s): T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
  • Journal Title: Optics Letters 34 Pages: 2507-2509
• [Journal Article] (2009)
  • Author(s): T.T. Kang, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Rev. B 79 Pages: 033301
• [Journal Article] (2009)
  • Author(s): A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
  • Journal Title: Diamond & Related Materials 18 Pages: 388-391
• [Journal Article] (2008)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
  • Journal Title: Diamond & Related Materials 17 Pages: 1622-1624
• [Journal Article] (2008)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol 5 Pages: 1571-1574
• [Journal Article] (2008)
  • Author(s): A. Hashimoto, K. Iwao, A. Yamamoto
  • Journal Title: Phys. Status Sol. 5 Pages: 1876-1878
• [Journal Article] (2008)
  • Author(s): K. Iwao, A. Yamamoto, A. Hashimoto
  • Journal Title: Phys. Status Sol. 5 Pages: 1771-1773
• [Journal Article] (2008)
  • Author(s): K. Sugita, Y. Nagai, D. Matsuoka, A. Hashimoto, H. Harima, A. Yamamoto
  • Journal Title: Phys. Status Sol 5 Pages: 1765-1767
• [Journal Article] (2008)
  • Author(s): A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
  • Journal Title: Phys. Sta. Sol. 5 Pages: 1762-1764
• [Journal Article] (2008)
  • Author(s): T.T. Kang, A. Hashimoto, A. Yamamoto
  • Journal Title: Applied Physics Letters 92 Pages: 110902
• [Journal Article] (2007)
  • Author(s): W.J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashi-moto, A. Yamamoto
  • Journal Title: Powder Diffraction 22 Pages: 219-222
• [Journal Article] (2007)
  • Author(s): K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Sta. Sol. 4 Pages: 2461-2464
• [Journal Article] (2007)
  • Author(s): Y. Nagai, H. Niwa, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2457-2460
• [Journal Article] (2007)
  • Author(s): W.J. Wang, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2415-2418
• [Journal Article] Phys. Status Sol. (2007)
  • Author(s): K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: 4 Pages: 2461-2464
• [Journal Article] (2007)
  • Author(s): M.S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2441-2444
• [Journal Article] (2007)
  • Author(s): K. Iwao, A. Yamamoto, A. Hashimoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2453-2456
• [Journal Article] (2007)
  • Author(s): A. Hashimoto, K. Matsumoto, A. Yamamoto
  • Journal Title: J. Cryst. Growth 301/302 Pages: 1021-1024
• [Journal Article] (2007)
  • Author(s): A. Hashimoto, K. Iwao, A. Yamamoto
  • Journal Title: J. Cryst. Growth 301/302 Pages: 500-503
• [Presentation] Characterization of InN grown by Pt catalyst-assisted MOVPE (2009)
  • Author(s): K. Sasamoto, K. Sugita, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 20090000
• [Presentation] Step-graded Interlayers for the improvement of MOVPE InxGa1-xN (x ~ 0. 4) Epi-layer Quality (2009)
  • Author(s): Md. R. Islam, Y. Ohmura, A. Hashimoto, A. Yamamoto, K. Kinoshita, Y. Koji
  • Organizer: Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 20090000
• [Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy (2009)
  • Author(s): M. Yamamoto, Ting-Ting Kang, M. Tanaka, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 20090000
• [Presentation] A Breakthrough Toward Wafer-size bi-layer Graphene Transfer (2009)
  • Author(s): A. Hashimoto, H. Terasaki, K. Morita, S. Tanaka, H. Hibino
  • Organizer: Abstracts of MRS 2009 Fall Meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 20090000
• [Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate (2009)
  • Author(s): A. Hashimoto, H. Terasaki, S. Tanaka
  • Organizer: Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2009)
  • Place of Presentation: Athens, Greek
  • Year and Date: 20090000
• [Presentation] A breakthrough toward wafer-size bi-layer graphene transfer (2008)
  • Author(s): A. Hashimoto, H. Terasaki, K. Morita, H. Hibino, S. Tanaka
  • Organizer: Technical Digest of International Conference on Silicon Carbide & Related Materials 2009
  • Place of Presentation: Nurnberg, Germany
  • Year and Date: 20080000
• [Presentation] RF-MBE InN Growth on Step-ordered Off-angle Sapphire Substrates (2008)
  • Author(s): A. Hashimoto, H. Terasaki, S. Tanaka
  • Organizer: Technical Digests of Int. Workshop on Nitride Semiconductor 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 20080000
• [Presentation] Step-flow Growth in Solid C60 Epitaxy on Graphene (2008)
  • Author(s): A. Hashimoto, H. Terasaki, S. Tanaka
  • Organizer: Delegate Manual of 19th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2008)
  • Place of Presentation: Sitges, Spain
  • Year and Date: 20080000
• [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell (2008)
  • Author(s): A. Hashimoto, K. Iwao H. Hohnoki, A. Yamamoto
  • Organizer: Abstract Book of 15th Int'l Conference on Molecular Beam Epitaxy (MBE2008)
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 20080000
• [Presentation] A Study of Mg-doping Behaviour of RF-MBE InN using Homo-junction Structure (2008)
  • Author(s): A. Hashi- moto, K. Iwao H. Honoki, A. Yamamoto
  • Organizer: Abstract Book of 15th Int'l Conference on Molecular Beam Epitaxy (MBE2008)
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 20080000
• [Presentation] Direct Measurements of Van der Waals Force in HOPG H. Terasaki (2008)
  • Author(s): A. Yamamoto, T. Honda, A. Hashi-moto
  • Organizer: Program Book of 2nd Conference on New Diamond & Nano Carbons 2008 (NDNC2008)
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 20080000
• [Presentation] Electron Beam Irradiation Effect for Solid C60 Epitaxy on Graphene (2008)
  • Author(s): A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
  • Organizer: Program Book of 2nd Conference on New Diamond & Nano Carbons 2008 (NDNC2008)
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 20080000
• [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell (2007)
  • Author(s): A. Hashimoto, K. Iwao, A. Yamamoto
  • Organizer: Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 20070000
• [Presentation] MOVPE Growth and Mg-doping of InxGa1-xN (x~0. 4) for Tandem Solar Cell (2007)
  • Author(s): M. Horie, A. Hashimoto, A. Yamamoto
  • Organizer: Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 20070000
• [Presentation] MOVPE Growth of In-rich InAlN for InAlN Tandem Solar Cell (2007)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Organizer: Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 20070000
• [Presentation] Transfer of Large Area Graphene Sheets from Carbonized 6H-SiC by a Direct Bonding Technique (2007)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yama- moto
  • Organizer: Abstracts of MRS 2007 Fall Meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 20070000
• [Presentation] Marked Improvements in Electrical and Optical Properties for MOVPE InN Annealed at a Low Temperature (~300 C) in O2 Atmosphere (2007)
  • Author(s): Y. Nagai, K. Sugita, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070000
• [Presentation] New Nitridation Technique for Mosaicity Control in RF-MBE InN Growth (2007)
  • Author(s): K. Iwao, A. Yamamoto, A. Hashimoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070000
• [Presentation] Mosaicity Control of In-rich InGaN in RF-MBE Growth by Template Technique (2007)
  • Author(s): K. Iwao, Y. Yamada, A. Yamamoto, A. Hashimoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070000
• [Presentation] A Trade-off Relation between Tilt and Twist Angle Fluctuations in InN Grown by RF-MBE (2007)
  • Author(s): A. Hashimoto, A. Yamamoto, K. Iwao
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070000
• [Presentation] Atmospheric-Pressure MOVPE Growth of In-Rich InAlN (2007)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070000
• [Presentation] The Importanve of Reducing Strain for the Improvement of Crystalline Quality of MOVPE InN (2007)
  • Author(s): K. Sugita, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070000
• [Presentation] Etching and Optical Deterioration of Nitrogen-Fa Face of Wultzite InN in NH3 Ambient (2007)
  • Author(s): A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070000
• [Presentation] A New Formation Method of Large Area Graphene on SiO2/Si Substrate (2007)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
  • Organizer: Abstract book of The 18th Europian Diamond and Related Mterials
  • Place of Presentation: Berlin
  • Year and Date: 20070000
• [Presentation] Van der Waals Epitaxy of Solid Fullerene on Graphene Sheet (2007)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
  • Organizer: Abstract book of The 18th Europian Diamond and Related Mterials
  • Place of Presentation: Berlin
  • Year and Date: 20070000
• [Presentation] GaInNAs Epitaxy for High Efficient Tandem Solar Cell by RF-MBE (Invited) (2007)
  • Author(s): A. Hashimoto
  • Organizer: Abstracts of MBE-Taiwan 2007
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 20070000
• [Book] 高効率太陽電池の開発と応用 (2009)
  • Author(s): 橋本明弘
  • Total Pages: 49-66
  • Publisher: シー・エム・シー出版
• [Remarks]
  • URL: http://www.eng.u-fukui.ac.jp/outline/master.html#Electrical_and_Electronics
• [Patent(Industrial Property Rights)] グラフェンシートの製造方法 (2007)
  • Inventor(s): 橋本明弘、田中悟
  • Industrial Property Rights Holder: 福井大学
  • Industrial Property Number: 特願2007-233535 2007-233535
  • Filing Date: 2007-09-10
• [Patent(Industrial Property Rights)] グラフェンシートの製造方法 (2007)
  • Inventor(s): 橋本明弘
  • Industrial Property Rights Holder: 福井大学
  • Industrial Property Number: 特願2007-261188
  • Filing Date: 2007-10-04